MSC015SMA070S

MSC015SMA070S Silicon Carbide N-Channel Power MOSFET 1 Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC015SMA070S device is a 700 V, 15 mΩ SiC MOSFET in a TO-268 (D3PAK) package. 1.1 Features The following are key features of the MSC015SMA070S device: Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 175 °C Fast and reliable body diode Superior avalanche ruggedness RoHS compliant 1.2 Benefits The following are benefits of the MSC015SMA070S device: High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need for external freewheeling diode Lower system cost of ownership 1.3 Applications The MSC015SMA070S device is designed for the following applications: PV inverter, converter, and industrial motor drives Smart grid transmission and distribution Induction heating and welding H/EV powertrain and EV charger Power supply and distribution 050-7750 MSC015SMA070S Datasheet Revision B 1 2 Device Specifications This section shows the specifications for the MSC015SMA070S device. 2.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings of the MSC015SMA070S device. Table 1 • Absolute Maximum Ratings Symbol Characteristic Ratings Unit VDSS Drain source voltage 700 V ID Continuous drain current at TC = 25 °C 126 A Continuous drain current at TC = 100 °C 89 IDM Pulsed drain current 315 VGS Gate-source voltage 23 to –10 V PD Total power dissipation at TC = 25 °C 370 W Linear derating factor 2.47 W/°C 1 Note: 1. Repetitive rating: pulse width and case temperature limited by maximum junction temperature. The following table shows the thermal and mechanical characteristics of the MSC015SMA070S device. Table 2 • Thermal and Mechanical Characteristics Symbol Characteristic RθJC Junction-to-case thermal resistance Min TJ Operating junction temperature TSTG Storage temperature TL Soldering temperature for 10 seconds (1.6 mm from case) Wt Package weight Typ Max Unit 0.27 0.41 °C/W –55 175 °C –55 150 050-7750 MSC015SMA070S Datasheet Revision B 260 0.14 oz 4.0 g 2 2.2 Electrical Performance The following table shows the static characteristics of the MSC015SMA070S device. T J = 25 °C unless otherwise specified. Table 3 • Static Characteristics Symbol Characteristic Test Conditions Min V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 100 µA 700 RDS(on) Drain-source on resistance 1 VGS = 20 V, ID = 40 A VGS(th) Gate-source threshold voltage VGS = VDS, ID = 4 mA ΔVGS(th)/ΔTJ Threshold voltage coefficient VGS = VDS, ID = 4 mA IDSS Zero gate voltage drain current VDS, = 700 V, VGS = 0 V 100 VDS = 700 V, VGS = 0 V TJ = 125 °C 500 VGS = 20 V/–10 V ±100 IGSS Gate-source leakage current Typ Max V 15 1.9 Unit 19 mΩ 2.4 V –3.4 mV/°C µA nA Notes: 1. Pulse test: pulse width < 380 µs, duty cycle < 2%. The following table shows the dynamic characteristics of the MSC015SMA070S device. T J = 25 °C unless otherwise specified. Table 4 • Dynamic Characteristics Symbol Characteristic Test Conditions Ciss Input capacitance Crss Reverse transfer capacitance VGS = 0 V, VDD = 700 V, VAC = 25 mV, ƒ = 1 MHz Coss Output capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge td(on) Turn-on delay time tr Current rise time td(off) Turn-off delay time tf Current fall time Eon Turn-on switching energy Eoff Turn-off switching energy td(on) Turn-on delay time tr Current rise time td(off) Turn-off delay time Min Typ 4500 Max Unit pF 29 510 VGS = –5 V/20 V, VDD = 470 V ID = 40 A 215 nC 58 35 VDD = 470 V, VGS = -5 V/20 V, ID = 40 A RG(ext) = 2.5 Ω 1 Freewheeling diode = 38 ns 8 55 MSC015SMA070S (VGS = -5 V) 15 420 2 µJ 90 VDD = 470 V, VGS = -5 V/20 V, ID = 40 A RG(ext) = 2.5 Ω 1 Freewheeling diode = 30 ns 8 50 2x x MSC010SDA070S tf Current fall time Eon Turn-on switching energy Eoff Turn-off switching energy 8 ESR Equivalent series resistance f = 1 MHz, 25 mV, drain short 0.69 Ω SCWT Short circuit withstand time VDS = 560 V, VGS = 20 V 3 µs 217 2 µJ 118 050-7750 MSC015SMA070S Datasheet Revision B 3 Symbol Characteristic Test Conditions EAS Avalanche energy, single pulse VDS = 150 V, VGS = 20 V, ID = 40 A Min Typ Max 4400 Unit mJ Notes: 1. RG is total gate resistance excluding internal gate driver impedance. 2. Eon includes energy of the freewheeling diode. The following table shows the body diode characteristics of the MSC015SMA070S device. T J = 25 °C unless otherwise specified. Table 5 • Body Diode Characteristics 2.3 Symbol Characteristic Test Conditions VSD Diode forward voltage ISD = 40 A, VGS = 0 V 3.4 V ISD = 40 A, VGS = –5 V 3.8 V ISD = 40 A, VGS = –5 V VDD = 470 V dl/dt = –1200 A/µs 40 ns 495 nC 19 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Min Typ Max Unit Typical Performance Curves This section shows the typical performance curves for the MSC015SMA070S device. Figure 1 • Drain Current vs. Drain-to-Source Voltage Figure 2 • Drain Current vs. Drain-to-Source Voltage Figure 3 • Drain Current vs. Drain-to-Source Voltage Figure 4 • Drain Current vs. Drain-to-Source Voltage 050-7750 MSC015SMA070S Datasheet Revision B 4 Figure 3 • Drain Current vs. Drain-to-Source Voltage Figure 4 • Drain Current vs. Drain-to-Source Voltage Figure 5 • RDS(on) vs. Junction Temperature Figure 6 • Gate Charge Characteristics Figure 7 • Capacitance vs. Drain-to-Source Voltage Figure 8 • IDM vs. Gate-to-Source Voltage Figure 9 • IDM vs. VDS Third Quadrant Conduction Figure 10 • IDM vs. VDS Third Quadrant Conduction 050-7750 MSC015SMA070S Datasheet Revision B 5 Figure 9 • IDM vs. VDS Third Quadrant Conduction Figure 10 • IDM vs. VDS Third Quadrant Conduction Figure 11 • VGS(th) vs. Junction Temp. Figure 12 • Forward Safe Operating Area Figure 13 • Maximum Transient Thermal Impedance 050-7750 MSC015SMA070S Datasheet Revision B 6 3 Package Specification This section shows the package specification of the MSC015SMA070S device. 3.1 Package Outline Drawing The following figure illustrates the TO-268 package outline of the MSC015SMA070S device. Figure 14 • Package Outline Drawing The following table shows the TO-268 dimensions and should be used in conjunction with the package 050-7750 MSC015SMA070S Datasheet Revision B 7 The following table shows the TO-268 dimensions and should be used in conjunction with the package outline drawing. Table 6 • TO-268 Dimensions Symbol Min (mm) Max (mm) Min (in.) Max (in.) A 4.90 5.10 0.193 0.201 B 15.85 16.20 0.624 0.638 C 18.70 19.10 0.736 0.752 D 1.00 1.25 0.039 0.049 E 13.80 14.00 0.543 0.551 F 13.30 13.60 0.524 0.535 G 2.70 2.90 0.106 0.114 H 1.15 1.45 0.045 0.057 I 1.95 2.21 0.077 0.087 J 0.94 1.40 0.037 0.055 K 2.40 2.70 0.094 0.106 L 0.40 0.60 0.016 0.024 M 1.45 1.60 0.057 0.063 N 0.00 0.18 0.000 0.007 O 12.40 12.70 0.488 0.500 P 5.45 BSC (nom.) Terminal 1 Gate Terminal 2 Drain Terminal 3 Source Terminal 4 Drain 0.215 BSC (nom.) 050-7750 MSC015SMA070S Datasheet Revision B 8 Microsemi Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 Email: sales.support@microsemi.com www.microsemi.com © 2019 Microsemi. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer's responsibility to independently determine suitability of any products and to test and verify the same. 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Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions; security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California, and has approximately 4,800 employees globally. Learn more at www. microsemi.com. 050-7750 | September 2019 | Released 050-7750 MSC015SMA070S Datasheet Revision B 9