MSC080SMA120B

MSC080SMA120B Silicon Carbide N-Channel Power MOSFET 1 Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC080SMA120B device is a 1200 V, 80 mΩ SiC MOSFET in a TO-247 package. 1.1 Features The following are key features of the MSC080SMA120B device: Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 175 °C Fast and reliable body diode Superior avalanche ruggedness RoHS compliant 1.2 Benefits The following are benefits of the MSC080SMA120B device: High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need for external freewheeling diode Lower system cost of ownership 1.3 Applications The MSC080SMA120B device is designed for the following applications: PV inverter, converter, and industrial motor drives Smart grid transmission and distribution Induction heating and welding H/EV powertrain and EV charger Power supply and distribution 050-7736 MSC080SMA120B Datasheet Revision A 1 2 Device Specifications This section shows the device specifications for the MSC080SMA120B device. 2.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings for the MSC080SMA120B device. Table 1 • Absolute Maximum Ratings Symbol Parameter Ratings Unit VDSS Drain source voltage 1200 V ID Continuous drain current at TC = 25 °C 37 A Continuous drain current at TC = 100 °C 26 IDM Pulsed drain current 1 91 VGS Gate-source voltage 23 to –10 V PD Total power dissipation at TC = 25 °C 200 W Linear derating factor 1.33 W/°C Note: 1. Repetitive rating: pulse width and case temperature limited by maximum junction temperature. The following table shows the thermal and mechanical characteristics of the MSC080SMA120B device. Table 2 • Thermal and Mechanical Characteristics Symbol Characteristic RθJC Junction-to-case thermal resistance TJ Operating junction temperature TSTG Storage temperature TL Soldering temperature for 10 seconds (1.6 mm from case) 260 Mounting torque, 6-32 or M3 screw 10 lbf-in 1.1 N-m Wt 2.2 Min Typ Max Unit 0.50 0.75 °C/W –55 175 °C –55 150 Package weight 0.22 oz 6.2 g Electrical Performance The following table shows the static characteristics for the MSC080SMA120B device. T J = 25 °C unless otherwise specified. Table 3 • Static Characteristics Symbol Characteristic Test Conditions Min V(BR) DSS Drain-source breakdown voltage VGS = 0 V, ID = 100 µA 1200 050-7736 MSC080SMA120B Datasheet Revision A Typ Max Unit V 2 Symbol Characteristic Test Conditions RDS(on) Drain-source on resistance VGS(th) Gate-source threshold voltage VGS = VDS, ID = 1 mA ΔVGS(th)/ΔTJ Threshold voltage coefficient VGS = VDS , ID = 1 mA IDSS Zero gate voltage drain current VDS = 1200 V, VGS = 0 V 100 VDS = 1200 V, TJ = 125 °C 500 1 Min VGS = 20 V, ID = 15 A 1.8 Typ Max Unit 80 100 mΩ 2.8 V -4.5 mV/°C µA VGS = 0 V IGSS Gate-source leakage current VGS = 20 V / –10 V ±100 nA Note: 1. Pulse test: pulse width < 380 µs, duty cycle < 2%. The following table shows the dynamic characteristics for the MSC080SMA120B device. T J = 25 °C unless otherwise specified. Table 4 • Dynamic Characteristics Symbol Characteristic Test Conditions Ciss Input capacitance 838 Crss Reverse transfer capacitance Coss Output capacitance VGS = 0 V VDD = 1000 V VAC = 25 mV ƒ = 1 MHz Min Typ Qg Total gate charge 64 Qgs Gate-source charge VGS = –5 V/20 V VDD = 800 V ID = 15 A Qgd Gate-drain charge td(on) Turn-on delay time tr Current rise time td(off) Turn-off delay time tf Current fall time Eon Turn-on switching energy 2 Eoff Turn-off switching energy td(on) Turn-on delay time tr Current rise time td(off) Turn-off delay time tf Current fall time Eon Turn-on switching energy Eoff Turn-off switching energy Max Unit pF 9 84 nC 12 19 VDD = 800 V VGS = -5 V/20 V ID = 15 A RG (ext) = 4 Ω1 Freewheeling diode = MSC080SMA120B (VGS = –5V) 5 ns 4 21 15 319 µJ 52 2 VDD = 800 V VGS = -5 V/20 V ID = 15 A RG (ext) = 4 Ω1 Freewheeling diode = MSC015SDA120B 4 ns 4 24 19 199 µJ 50 ESR Equivalent series resistance f = 1 MHz, 25 mV, drain short 1.9 Ω SCWT Short circuit withstand time VDS = 960 V, VGS = 20 V, 3 µS EAS Avalanche energy, single pulse VDS = 150 V, ID = 15 A, 1000 mJ Notes: 1. RG is total gate resistance excluding internal gate driver impedance. 2. Eon includes energy of the freewheeling diode. 050-7736 MSC080SMA120B Datasheet Revision A 3 2.3 Body Diode Characteristics The following table shows the body diode characteristics for the MSC080SMA120B device. T J = 25 °C unless otherwise specified. Table 5 • Body Diode Characteristics 2.4 Symbol Parameter Test Conditions Min VSD Diode forward voltage ISD = 15 A, VGS = 0 V 4.0 V VSD Diode forward voltage ISD = 15 A, VGS = –5 V 4.2 V trr Reverse recovery time 34 ns Qrr Reverse recovery charge ISD = 15 A, VGS = –5 V VDD = 800 V dl/dt = –1000 A/µs 200 nC Irrm Reverse recovery current 6.5 A Typ Max Unit Typical Performance Curves This section shows the typical performance curves for the MSC080SMA120B device. Figure 1 • Drain Current vs. Drain-to-Source Voltage Figure 2 • Drain Current vs. Drain-to-Source Voltage Figure 3 • Drain Current vs. Drain-to-Source Voltage Figure 4 • Drain Current vs. Drain-to-Source Voltage 050-7736 MSC080SMA120B Datasheet Revision A 4 Figure 3 • Drain Current vs. Drain-to-Source Voltage Figure 4 • Drain Current vs. Drain-to-Source Voltage Figure 5 • RDS(on) vs. Junction Temperature Figure 6 • Gate Charge Characteristics Figure 7 • Capacitance vs. Drain-to-Source Voltage Figure 8 • IDM vs. Gate-to-Source Voltage Figure 8 • IDM vs. VDS Third Quadrant Conduction Figure 9 • IDM vs. VDS Third Quadrant Conduction 050-7736 MSC080SMA120B Datasheet Revision A 5 Figure 9 • IDM vs. VDS Third Quadrant Conduction Figure 10 • IDM vs. VDS Third Quadrant Conduction Figure 11 • VGS(th) vs. Junction Temp. Figure 12 • Forward Safe Operating Area Figure 13 • Maximum Transient Thermal Impedance 050-7736 MSC080SMA120B Datasheet Revision A 6 3 Package Specification This section shows the package specification for the MSC080SMA120B device. 3.1 Package Outline Drawing This section shows the TO-247 package drawing for the MSC080SMA120B device. The dimensions in the figure below are in millimeters and (inches). Figure 13 • Package Outline Drawing 050-7736 MSC080SMA120B Datasheet Revision A 7 The following table shows the MSC040SMA120B dimensions and should be used in conjunction with the package outline drawing. Table 6 • TO-247 Dimensions Symbol Min (mm) Max (mm) Min (in.) Max (in.) A 4.69 5.31 0.185 0.209 B 1.49 2.49 0.059 0.098 C 2.21 2.59 0.087 0.102 D 0.40 0.79 0.016 0.031 E 5.38 6.20 0.212 0.244 F 3.50 3.81 0.138 0.150 G 6.15 BSC H 20.80 21.46 0.819 0.845 I 19.81 20.32 0.780 0.800 J 4.00 4.50 0.157 0.177 K 1.01 1.40 0.040 0.055 L 2.87 3.12 0.113 0.123 M 1.65 2.13 0.065 0.084 N 15.49 16.26 0.610 0.640 O 13.50 14.50 0.531 0.571 P 16.50 17.50 0.650 0.689 Q 5.45 BSC R 2.00 2.75 0.079 0.108 S 7.10 7.50 0.280 0.295 Terminal 1 Gate Terminal 2 Drain Terminal 3 Source Terminal 4 Drain 0.242 BSC 0.215 BSC 050-7736 MSC080SMA120B Datasheet Revision A 8 Microsemi Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 Email: sales.support@microsemi.com www.microsemi.com © 2019 Microsemi. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer's responsibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this document or to any products and services at any time without notice. Microsemi, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions; security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California, and has approximately 4,800 employees globally. Learn more at www. microsemi.com. 050-7736 | November 2019 | Released 050-7736 MSC080SMA120B Datasheet Revision A 9