MSC080SMA120S

MSC080SMA120S Silicon Carbide N-Channel Power MOSFET Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC080SMA120S device is a 1200 V, 80 mΩ SiC MOSFET in a TO-268 (D3PAK) package. Features The following are key features of the MSC080SMA120S device: • Low capacitances and low gate charge • Fast switching speed due to low internal gate resistance (ESR) • Stable operation at high junction temperature, TJ(max) = 175 °C • Fast and reliable body diode • Superior avalanche ruggedness • RoHS compliant Benefits The following are benefits of the MSC080SMA120S device: • High efficiency to enable lighter, more compact system • Simple to drive and easy to parallel • Improved thermal capabilities and lower switching losses • Eliminates the need for external freewheeling diode • Lower system cost of ownership Applications The MSC080SMA120S device is designed for the following applications: • PV inverter, converter, and industrial motor drives • Smart grid transmission and distribution • Induction heating and welding • H/EV powertrain and EV charger • Power supply and distribution 050-7765 MSC080SMA120S Datasheet Revision A 1 Device Specifications Device Specifications This section shows the specifications for the MSC080SMA120S device. Absolute Maximum Ratings The following table shows the absolute maximum ratings of the MSC080SMA120S device. Table 1 • Absolute Maximum Ratings Symbol Parameter Ratings Unit VDSS Drain source voltage 1200 V ID Continuous drain current at TC = 25 °C 35 A Continuous drain current at TC = 100 °C 25 IDM Pulsed drain current 1 87 VGS Gate-source voltage 23 to –10 V PD Total power dissipation at TC = 25 °C 182 W Linear derating factor 1.21 W/°C Note: 1. Repetitive rating: pulse width and case temperature limited by maximum junction temperature. The following table shows the thermal and mechanical characteristics of the MSC080SMA120S device. Table 2 • Thermal and Mechanical Characteristics Symbol Characteristic Min RθJC Junction-to-case thermal resistance TJ Operating junction temperature TSTG Storage temperature TL Soldering temperature for 10 seconds (1.6 mm from case) Wt Package weight 050-7765 MSC080SMA120S Datasheet Revision A Typ Max Unit 0.55 0.83 °C/W –55 175 °C –55 150 260 0.14 oz 4.0 g 2 Device Specifications Electrical Performance The following table shows the static characteristics of the MSC080SMA120S device. TJ = 25 °C unless otherwise specified. Table 3 • Static Characteristics Symbol Characteristic Test Conditions Min V(BR)DSS Drain-source breakdown voltage VGS = 0 V 1200 Typ Max Unit V ID = 100 µA RDS(on) Drain-source on resistance1 VGS = 20 V 80 100 mΩ ID = 15 A VGS(th) Gate-source threshold voltage VGS = VDS 1.8 2.8 V –4.5 mV/°C ID = 1 mA ΔVGS(th)/ ΔTJ Threshold voltage coefficient IDSS Zero gate voltage drain current VGS = VDS ID = 1 mA VDS = 1200 V 100 µA TJ = 25 °C VGS = 0 V VDS = 1200 V 500 TJ = 125 °C VGS = 0 V IGSS Gate-source leakage current VGS = 20 V 100 VGS = –10 V 100 nA Note: 1. Pulse test: pulse width < 380 µs, duty cycle < 2%. The following table shows the dynamic characteristics of the MSC080SMA120S device. TJ = 25 °C unless otherwise specified. Table 4 • Dynamic Characteristics Symbol Characteristic Test Conditions Ciss Input capacitance VGS = 0 V, VDD = 1000 V Min Typ 838 Max Unit pF VAC = 25 mV, ƒ = 1 MHz Crss Reverse transfer capacitance 9 Coss Output capacitance 84 Qg Total gate charge Qgs Gate-source charge VGS = –5 V/20 V, VDD = 800 64 nC V ID = 15 A 050-7765 MSC080SMA120S Datasheet Revision A 12 3 Device Specifications Symbol Characteristic Qgd Gate-drain charge td(on) Turn-on delay time Test Conditions Min Typ Max Unit 19 VDD = 800 V, VGS = -5 V/20 V 5 ns 1 ID = 15 A, RG (ext) = 4 Ω tr Current rise time Freewheeling diode = 4 MSC080SMA120S (VGS = –5 V) td(off) Turn-off delay time 21 tf Current fall time 15 Eon Turn-on switching energy 2 319 Eoff Turn-off switching energy 52 td(on) Turn-on delay time VDD = 800 V, VGS = –5 V/20 V 4 µJ ns ID = 15 A, RG (ext) = 4 Ω1 tr Current rise time td(off) Turn-off delay time 24 tf Current fall time 19 Eon Turn-on switching energy 2 199 Eoff Turn-off switching energy 50 ESR Equivalent series resistance f = 1 MHz, 25 mV, drain short 1.9 Ω SCWT Short circuit withstand time VDS = 960 V, VGS = 20 V 3 µS 1000 mJ Freewheeling diode = 4 MSC015SDA120B µJ TC = 25 °C EAS Avalanche energy, single pulse VDS = 150 V, ID = 15 A TC = 25 °C Notes: 1. RG is total gate resistance excluding internal gate driver impedance. 2. Eon includes energy of the freewheeling diode. 050-7765 MSC080SMA120S Datasheet Revision A 4 Device Specifications The following table shows the body diode characteristics of the MSC080SMA120S device. TJ = 25 °C unless otherwise specified. Table 5 • Body Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Unit VSD Diode forward voltage ISD = 15 A, VGS = 0 V 4.0 V VSD Diode forward voltage ISD = 15 A, VGS = –5 V 4.2 V trr Reverse recovery time ISD = 15 A, VGS = –5 V 34 ns 200 nC 6.5 A VDD = 800 V Qrr Reverse recovery charge IRRM Reverse recovery current dl/dt = –1000 A/µs 050-7765 MSC080SMA120S Datasheet Revision A 5 Device Specifications Typical Performance Curves This section shows the typical performance curves of the MSC080SMA120S device. Figure 1 • Drain Current vs. VDS Figure 2 • Drain Current vs. VDS Figure 3 • Drain Current vs. VDS Figure 4 • Drain Current vs. VDS 050-7765 MSC080SMA120S Datasheet Revision A 6 Device Specifications Figure 5 • RDS(on) vs. Junction Temperature Figure 7 • Capacitance vs. Drain-to-Source Voltage Figure 9 • IDM vs. VDS 3rd Quadrant Conduction Figure 6 • Gate Charge Characteristics Figure 8 • IDM vs. Gate-to-Source Voltage Figure 10 • IDM vs. VDS 3rd Quadrant Conduction 050-7765 MSC080SMA120S Datasheet Revision A 7 Device Specifications Figure 11 • VGS(th) vs. Junction Temp. Figure 12 • Forward Safe Operating Area Figure 13 • Maximum Transient Thermal Impedance 050-7765 MSC080SMA120S Datasheet Revision A 8 Package Specification Package Specification This section shows the package specification of the MSC080SMA120S device. Package Outline Drawing The following figure illustrates the TO-268 package outline of the MSC080SMA120S device. Figure 14 • Package Outline Drawing The following table shows the TO-268 dimensions and should be used in conjunction with the package outline drawing. Table 6 • TO-268 Dimensions Symbol Min (mm) Max (mm) Min (in.) Max (in.) A 4.90 5.10 0.193 0.201 B 15.85 16.20 0.624 0.638 C 18.70 19.10 0.736 0.752 D 1.00 1.25 0.039 0.049 E 13.80 14.00 0.543 0.551 F 13.30 13.60 0.524 0.535 050-7765 MSC080SMA120S Datasheet Revision A 9 Package Specification Symbol Min (mm) Max (mm) Min (in.) Max (in.) G 2.70 2.90 0.106 0.114 H 1.15 1.45 0.045 0.057 I 1.95 2.21 0.077 0.087 J 0.94 1.40 0.037 0.055 K 2.40 2.70 0.094 0.106 L 0.40 0.60 0.016 0.024 M 1.45 1.60 0.057 0.063 N 0.00 0.18 0.000 0.007 O 12.40 12.70 0.488 0.500 P 5.45 BSC (nom.) Terminal 1 Gate Terminal 2 Drain Terminal 3 Source Terminal 4 Drain 050-7765 MSC080SMA120S Datasheet Revision A 0.215 BSC (nom.) 10 Legal Microsemi 2355 W. 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Headquartered in Chandler, Arizona, the company offers outstanding technical support along with dependable delivery and quality. Learn more at www.microsemi.com. 050-7765 | January 2020 | Released 050-7765 MSC080SMA120S Datasheet Revision A 11