MSC280SMA120S

Silicon Carbide Semiconductors Silicon Carbide Semiconductor Products www.microchip.com/SiC Table of Contents Overview.............................................................................. 3 Higher Switching Efficiency................................................ 4 SiC Discretes and Modules Nomenclature........................ 5 Discrete Products................................................................ 6 Power Modules.................................................................... 7 AgileSwitch Gate Driver Solutions...................................... 9 SiC Reference Designs..................................................... 10 Notes.................................................................................. 11 2 www.microchip.com Overview Breakthrough Technology Combines High Performance With Low Losses Silicon Carbide (SiC) semiconductors provide an innovative option for power electronic designers looking for improved system efficiency, smaller form factor and higher operating temperature in products covering industrial, transportation/automotive, medical, aerospace/aviation, defense and communcation market segments. Our next-generation SiC MOSFETs and SiC SBDs are designed with higher repetitive Unclamped Inductive Switching (UIS) capability at rated on-resistance or current. Our SiC MOSFETs maintain high UIS capability at approximately 10–25 Joules Per Square Centimeter (J/cm2) and robust short circuit protection. Microchip’s SiC Schottky Barrier Diodes (SBDs) are designed with balanced surge current, forward voltage, thermal resistance and thermal capacitance ratings at low reverse current for lower switching loss. In addition, our SiC MOSFET and SiC SBD die can be paired together for use in modules. SiC MOSFET and SiC SBD products from Microchip will be qualified to the AEC-Q101 standard. • Extremely-low switching losses improves system efficiency • High-power density for smaller footprint to reduce size and weight • 3× more thermally conductive than silicon SiC is the perfect technology to address high-frequency and high-power density applications Automotive Lower power losses Higher frequency cap. Higher junction temp. Industrial Defense Medical • Quality: proven reliability and ruggedness • Supply: risk averse approach throughout the supply chain • Support: standard discrete, die, module, and gate drive solutions with design and application support for customers Microchip SiC Solutions Silicon Carbide Semiconductor Products Aviation Easier cooling Downsized system Higher reliability QSS Quality Supply • Reduced sink requirements to achieve smaller size, lighter weight • High-temperature operation improves reliability at increased power density • Proven reliability/ruggedness, supply chain and support with Microchip quality, supply and support Support 3 Higher Switching Efficiency SiC is the ideal technology for higher-switching-frequency, higher-efficiency and higher-power (>650 V) applications. Target markets and applications include: • Industrial—Motor drives, welding, UPS, SMPS, induction heating • Transportation/automotive—Electric Vehicle (EV) battery chargers, on board chargers, Hybrid Electric Vehicle (HEV) powertrains, DC-DC converters, energy recovery • Smart energy—Photovoltaic (PV) inverters, wind turbines • Medical—MRI power supply, X-ray power supply • Commercial aviation—Actuation, air conditioning, power distribution • Defense—Motor drives, auxiliary power supplies, integrated vehicle systems SiC MOSFET and SiC Schottky Barrier Diode products increase your system efficiency over silicon MOSFET and IGBT solutions while lowering your total cost of ownership by enabling downsized systems and smaller/lower-cost cooling. Advanced R&D and Manufacturing Design • TCAD design and process simulators • Mask-making and layout • Finite Element Analysis (FEA) and Electrothermal simulation capabilities • Design for ruggedness Process • Automotive quality internal fab and foundry • Propietary gate oxide process with exceptional reliability • Specialized tools for SiC processes - implant, anneal, etch, furnaces, metal deposition Analytical and Support • • • • Full FA capabilities in-house SEM/EDAX Thermal imaging Photo Emission Microscope system (Phemos 1000) Reliability Testing and Screening • AEC-Q101 • Full suite of tools and equipment for burn-ins and reliability screening • Sonoscan and X-ray 4 www.microchip.com SiC Discretes and Modules Nomenclature SiC Discretes MSC nnn Sxy vvv p MSC Microchip p Package code B = TO-247-3L B4 =TO-247-4L K = TO-220 D/S = Die S = D3PAK J = SOT-227 nnn SiC SBD: Current SiC MOSFET: RDS(on) Sxy S: Silicon Carbide (SiC) x: D = Diode M = MOSFET y: Revision or generation vvv Voltage 070 = 700 V 120 = 1200 V 170 = 1700 V SP6LI SiC Power Modules MSC SM 120 A M02 C T 6LI A G MSC = Microchip G = RoHS compliant Semiconductor type: SM = MCHP SiC MOSFET die Baseplate material: M = AISiC Left blank = Copper Breakdown voltage: 70 = 700 V 120 = 1200 V 170 = 1700 V Substrate material: A = AIN N = Si3N4 Package: 6LI = SP6 Low Inductance Electrical topology: A = Phase Leg RDS(on): M02 = 02 mOhms M03 = 03 mOhms M042 = 4.2 mOhms Silicon Carbide Semiconductor Products Anti-parallel Diode: C = added SiC Diode Left blank = no diode Temperature Sensor: T = Thermistor (NTC) Left blank = no NTC 5 Discrete Products SiC Schottky Barrier Diodes Part Number Voltage (V) SiC MOSFETs IF (A) Package MSC010SDA070B 10 TO-247 MSC090SMA070B Part Number MSC010SDA070K 10 TO-220 MSC090SMA070S Voltage (V) RDSon (mΩ) Package TO-247 90 D3PAK TO-247 30 TO-247 MSC060SMA070B MSC030SDA070K 30 TO-220 MSC060SMA070B4 MSC050SDA070B 50 TO-247 MSC060SMA070S MSC010SDA120B 10 TO-247 MSC035SMA070B MSC010SDA120K 10 TO-220 MSC035SMA070B4 MSC015SDA120B 15 TO-247 MSC035SMA070S D3PAK 15 TO-220 MSC015SMA070B TO-247 30 TO-247 MSC015SMA070B4 MSC030SDA120K 30 TO-220 MSC015SMA070S D3PAK MSC030SDA120S 30 D3PAK MSC080SMA120B TO-247 MSC050SDA120B 50 TO-247 MSC080SMA120B4 MSC050SDA120S 50 D3PAK MSC080SMA120S MSC010SDA170B 10 TO-247 MSC080SMA120J SOT-227 30 TO-247 MSC040SMA120B TO-247 50 TO-247 MSC040SMA120B4 MSC030SDA070B 700 MSC015SDA120K MSC030SDA120B MSC030SDA170B 1200 1700 MSC050SDA170B MSC040SMA120S TO-247-4L 60 D3PAK 700 TO-247 TO-247-4L 35 15 TO-247-4L TO-247-4L 80 1200 D3PAK TO-247-4L 40 D3PAK SOT-227 MSC040SMA120J MSC025SMA120B TO-247 MSC025SMA120B4 TO-247-4L 25 MSC025SMA120S D3PAK SOT-227 MSC025SMA120J TO-247 MSC750SMA170B 750 MSC750SMA170B4 MSC750SMA170S MSC035SMA170B TO-247-4L D3PAK 1700 TO-247 35 MSC035SMA170B4 TO-247-4L D3PAK MSC035SMAS170S SiC MOSFET Features and Benefits Characteristics SiC vs. Si Results Benefits Higher efficiency Breakdown field (MV/cm) 10× higher Lower on-resistance Electron sat. velocity (cm/s) 2× higher Faster switching Size reduction Bandgap energy (ev) 3× higher Higher junction temperature Improved cooling Thermal conductivity (W/m.K) 3× higher Higher power density Higher current capabilities Self regulation Easy paralleling Positive temperature coefficient TO-247-4L 6 TO-247-3L TO-247-2L TO-220 TO-268 SOT-227 www.microchip.com Power Modules Power Module Advantages • High-speed switching • Low switching losses • Low-input capacitance Part Number Type • High-power density • Low-profile packages • Minimum parasitic inductance Electrical Topology Voltage (V) MSC2X30/31SDA070J 700 MSC2X50/51SDA070J MSC2X100/101SDA070J Dual diode (Anti-parallel/parallel) MSC2X30/31SDA120J 1200 • Lower system cost • Standard and custom modules • 30+ years design experience RDSon (mΩ) Current (A) Tc = 80 C Package - 30 SOT-227 - 50 SOT-227 - 100 SOT-227 - 30 SOT-227 - 50 SOT-227 MSC2X100/101SDA120J - 100 SOT-227 MSCDC50H701AG - 50 SP1 - 50 SOT-227 - 100 SP6 MSCDC200H70AG - 200 SP6 MSCDC50H1201AG - 50 SP1 MSC50DC120HJ - 50 SOT-227 - 100 SP6 MSCDC200H120AG - 200 SP6 MSCDC100H170AG - 100 SP6C - 200 SP6C MSC2X50/51SDA120J MSC50DC70HJ 700 MSCDC100H70AG Full bridge MSCDC100H120AG MSCDC200H170AG 1200 1700 - 50 SP1 MSC50DC170HJ - 50 SOT-227 MSCDC100A70D1PAG - 100 D1P MSCDC150A70D1PAG - 150 D1P MSCDC200A70D1PAG - 200 D1P - 300 SP6 MSCDC450A70AG - 450 SP6 MSCDC600A70AG - 600 SP6 MSCDC100A120D1PAG - 100 D1P MSCDC150A120D1PAG - 150 D1P MSCDC200A120D1PAG - 200 D1P - 300 SP6 MSCDC450A120AG - 450 SP6 MSCDC600A120AG - 600 SP6 MSCDC300A170AG - 300 SP6C MSCDC450A170AG - 450 SP6C MSCDC600A170AG - 600 SP6C - 100 D1P MSCDC150A170D1PAG - 150 D1P MSCDC200A170D1PAG - 200 D1P MSCDC100KK70D1PAG - 100 D1P - 150 D1P - 200 D1P - 100 D1P - 150 D1P - 200 D1P MSCDC50H1701AG MSCDC300A70AG SiC Diode Module MSCDC300A120AG 700 Phase leg 1700 MSCDC100A170D1PAG 700 MSCDC150KK70D1PAG MSCDC200KK70D1PAG MSCDC100KK120D1PAG MSCDC150KK120D1PAG MSCDC200KK120D1PAG Silicon Carbide Semiconductor Products 1200 Dual common cathode 1200 Notes 7 Power Modules RDSon (mΩ) Current (A) Tc = 80 C Package - 100 D1P - 150 D1P - 200 D1P - 50 SP1 - 50 SP1 - 50 SP1 15 97 SOT-227 15 97 SOT-227 40 44 SOT-227 25 71 SOT-227 12.5 138 SOT-227 11 202 SP3F 40 44 SOT-227 25 71 SOT-227 12.5 138 SOT-227 11 202 SP3F 700 15 97 SP3F 25 71 SP3F 1200 12.5 138 SP3F MSCSM120HM50CT3AG 40 44 SP3F MSCSM70AM19CT1AG 15 97 SP1F MSCSM70AM07CT3AG 5 276 SP3F 7.5 188 SP3F 2.5 538 D3 2.5 538 SP6C 12.5 138 SP1F 25 71 SP1F 40 44 SP1F 6.25 268 SP3F Part Number Type MSCDC100KK170D1PAG Dual common cathode MSCDC150KK170D1PAG MSCDC200KK170D1PAG MSCDC50X701AG Electrical Topology SiC Diode Module Three phase bridge MSCDC50X1201AG Voltage (V) 1700 1200 1700 MSCDC50X1701AG MSC100SM70JCU2 700 MSC100SM70JCU3 MSC40SM120JCU2 Boost chopper MSC70SM120JCU2 MSC130SM120JCU2 MSCSM120DAM11CT3AG 1200 MSC40SM120JCU3 MSC70SM120JCU3 Buck chopper MSC130SM120JCU3 MSCSM120SKM11CT3AG MSCSM70HM19CT3AG MSCSM120HM31CT3AG Full bridge MSCSM120HM16CT3AG 700 MSCSM70AM10CT3AG MSCSM70AM025CD3AG MSCSM70AM025CT6AG SiC MOSFET Module MSCSM120AM16CT1AG MSCSM120AM31CT1AG Phase leg MSCSM120AM50CT1AG MSCSM120AM08CT3AG 1200 Notes 8.33 202 SP3F MSCSM120AM042CD3AG 4.2 394 D3 2, 3 MSCSM120AM027CD3AG 2.7 584 D3 2, 3 MSCSM120AM042CT6AG 4.2 394 SP6C MSCSM120AM027CT6AG 2.7 584 SP6C MSCSM70VM19C3AG 15 97 SP3F 7.5 97 SP4 15 97 SP3F 7.5 186 SP6P SP6P MSCSM120AM11CT3AG Vienna phase leg MSCSM70VM10C4AG 700 MSCSM70TAM19CT3AG MSCSM70TAM10CTPAG MSCSM70TAM05TPAG Three hase bridge Triple phase leg MSCSM120TAM31CT3AG 1200 MSCSM120TAM16CTPAG MSCSM120TAM11CTPAG 700 MSCSM70AM025CT6LIAG MSCSM120AM042CT6LIAG MSCSM120AM03CT6LIAG Low Inductance SiC MOSFET Module MSCSM120AM02CT6LIAG Phase leg 1200 5 273 25 71 SP3F 12.5 136 SP6P 8.33 200 SP6P 2.5 538 SP6C LI 4.2 394 SP6C LI 1 2.5 641 SP6C LI 1 2.1 754 SP6C LI 1 1, 2, 3 Refer to Gate Driver Solutions table on page 9 8 www.microchip.com AgileSwitch Gate Driver Solutions Gate Driver Reference* Gate Driver Type Gate Driver Part Number Adapter Board Part Number 1 Core 2ASC-12A1HP SP6CA1 2 Core 2ASC-12A1HP 62CA1 3 Plug & Play 62EM1-00001 Not Applicable *Refer to footnotes in SiC product tables 2ASC-12A1HP 62EM1 Improve switching efficiency and EMI performance, all while protecting your valuable SiC devices. The AgileSwitch 2ASC dual-channel high performance gate driver cores are designed to take on your SiC implementation challenges. Control, monitor, and protect the latest 62 mm SiC devices using the Plug-and-Play 62EM Gate Driver Boards. Designed for traction applications, the 62EM can drive up to 1.7 kV devices at 100 kHz with configurable fault settings and patented Augmented Switching technology. 62CA1 and SP6CA1 (Shown with 2ASC-12A1HP connected) Compatible with the AgileSwitch 2ASC Gate Driver Cores, the family of Module Adapter Boards provides a platform to rapidly evaluate and optimize new SiC power devices. Standard offerings include a reference design for the 1200V SP6LI (SP6CA1) and 1200V D3 (62CA1). Silicon Carbide Semiconductor Products 9 SiC Reference Designs User-Friendly Reference Designs Microchip and our partner ecosystem provide open-source, user friendly SiC MOSFET reference design solutions that enable faster time to market for customers using our SiC MOSFETs and power modules. You can use isolated dual-gate driver reference designs with our SiC MOSFETS in a number of SiC topologies. SiC Reference Designs Part Number Gate Drive or Line Voltage KHz, max Per Side Drive Power (W) Description MSCSICMDD/REF –5 to +20 V MSCSICSP3/REF2 –5 to +20 V 400 8W SiC discrete gate driver board 400 16 W MSCSICSP6L/REF3 SiC SP3 module driver board –5 to +20 V 400 16 W SiC SP6LI module driver board MSCSICPFC/REF5 In: 400 Vrms, Out: 700 Vdc 140 30 kW 30 kW 3-phase Vienna PFC (design files only) SP3F standard package compatible The MSCSICMDD/REF1 is a switch-configurable high/low-side driver with half bridges or independent drive. • 400 kHz maximum switching frequency • 8W of gate drive power per side • 30A peak output current • –5V/+20 V gate drive voltage • ±100 kV/uS capability • Galvanic isolation of more than 2000V on both gate drivers The MSCSICPFC/REF5 is a Vienna 3-Phase PFC reference design for Hybrid Electric Vehicle/Electric Vehicle (HEV/ EV) charger and high-power switch mode power supply applications. • 30 kW Vienna rectifier topoloy at 98.6 % peak efficiency • 380/400 VAC, 50 Hz/60 Hz input voltage with 700V DC output voltage • 140 kHz pulse-width modulation switching frequency • < 5% current THD at half and full loads • 700 V SiC MOSFETs and 1200 V SiC diodes • dsPIC33CH using 3-level modulation for digital control 10 The MSCSICSP3/REF2 is a half bridge driver compatible with SP3F standard package modules. • 400 kHz maximum switching frequency • 16W of gate drive power per side • 30A peak output current • –5 V/+20 V gate drive voltage • ±100 kV/uS capability • Galvanic isolation of more than 2000 V on both gate drivers The MSCSICSP6/REF3 is a half bridge driver for the low inductance SP6LI power modules. • Stray inductance < 3 nH to fully benefit from SiC • Designed to be easy to parallel • Up to 1200 V and 586 A • Half Bridge Driver • Up to 400 kHz switching frequency • 12 V VIN supply • Capable of 16 W of gate drive power/side • 30 A Peak Source output current • Min.100 KV/µS CMTI www.microchip.com Notes Silicon Carbide Semiconductor Products 11 Support Microchip is committed to supporting its customers in developing products faster and more efficiently. 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