MSC040SMA120J

MSC040SMA120J Silicon Carbide N-Channel Power MOSFET Datasheet 1 Product Overview This section shows the product overview for the MSC040SMA120J device. 1.1 Features The following are key features of the MSC040SMA120J device: Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 175 °C Fast and reliable body diode Superior avalanche ruggedness RoHS compliant Isolated voltage to 2500 V 1.2 Benefits The following are benefits of the MSC040SMA120J device: High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need for external freewheeling diode Lower system cost of ownership 1.3 Applications The MSC040SMA120J device is designed for the following applications: PV inverter, converter, and industrial motor drives Smart grid transmission and distribution Induction heating and welding H/EV powertrain and EV charger Power supply and distribution 050-7738 MSC040SMA120J Datasheet Revision B 1 2 Device Specifications This section shows the specifications for the MSC040SMA120J device. 2.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings for the MSC040SMA120J device. Table 1 • Absolute Maximum Ratings Symbol Parameter Ratings Unit VDSS Drain source voltage 1200 V ID Continuous drain current at TC = 25 °C 53 A Continuous drain current at TC = 100 °C 37 IDM Pulsed drain current 105 VGS Gate-source voltage 25 to –10 V PD Total power dissipation at TC = 25 °C 208 W Linear derating factor 1.19 W/°C 1 Note: 1. Repetitive rating: pulse width and case temperature limited by maximum junction temperature. The following table shows the thermal and mechanical characteristics for the MSC040SMA120J device. Table 2 • Thermal and Mechanical Characteristics Symbol Characteristic RθJC Junction-to-case thermal resistance Min Typ Max Unit 0.48 0.72 °C/W TJ Operating junction temperature –55 175 °C TSTG Storage temperature –55 150 VIsolation RMS voltage (50-60 Hz sinusoidal waveform from terminals to mounting base for 1 minute). 2500 V Mounting torque, M4 screw Wt 2.2 Package weight 10 lbf-in 1.1 N-m 1.03 oz 29.2 g Electrical Performance The following table shows the static characteristics for the MSC040SMA120J device. T J = 25 °C unless otherwise specified. Table 3 • Static Characteristics Symbol Characteristic Test Conditions Min V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 100 µA 1200 RDS(on) Drain-source on resistance 1 VGS = 20 V, ID = 40 A VGS(th) Gate-source threshold voltage VGS = VDS, ID = 1 mA 050-7738 MSC040SMA120J Datasheet Revision B Typ Unit V 40 1.8 Max 2.8 50 mΩ V 2 Symbol Characteristic Test Conditions ΔVGS(th)/ΔTJ Threshold voltage coefficient (see Figure 11) VGS = VDS, ID = 1 mA IDSS Zero gate voltage drain current VDS = 1200 V, VGS = 0 V 100 VDS = 1200 V, TJ = 125 °C, VGS = 0 V 500 Gate-source leakage current VGS = 20 V/–10 V ±100 IGSS Min Typ Max –4.5 Unit mV/°C µA nA Note: 1. Pulse test: pulse width < 380 µs, duty cycle < 2%. The following table shows the dynamic characteristics for the MSC040SMA120J device. T J = 25 °C unless otherwise specified. Table 4 • Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Ciss Input capacitance Crss Reverse transfer capacitance VGS = 0 V, VDD = 1000 V, VAC = 25 mV, ƒ = 1 MHz Coss Output capacitance Qg Total gate charge Qgs Gate-source charge 29 Qgd Gate-drain charge 31 td(on) Turn-on delay time tr Current rise time td(off) Turn-off delay time 55 tf Current fall time 25 Eon2 Turn-on switching energy 2 930 Eoff Turn-off switching energy 585 td(on) Turn-on delay time tr Current rise time td(off) Turn-off delay time 74 tf Current fall time 37 Eon2 Turn-on switching energy 2 890 Eoff Turn-off switching energy 855 ESR Equivalent series resistance f = 1 MHz, 25 mV, drain short 1.2 Ω SCWT Short circuit withstand time VDS = 960 V, VGS = 20 V, TC = 25 °C 3 µs EAS Avalanche energy, single pulse VDS = 150 V, VGS = 20 V, ID = 40 A, TC = 25 °C, IL = 2.5mH 2000 mJ 1990 Unit pF 17 156 VGS = –5 V/20 V, VDD = 800 V, ID = 40 A VDD = 800 V, VGS = 0 V/20 V, ID = 40 A, RG (ext) = 5.3 Ω1, Freewheeling diode = MSC015SDA120B VDD = 800 V, VGS = 0 V/20 V, ID = 40 A, RG (ext) = 5.3 Ω1, TC = 150 °C, Freewheeling diode = MSC015SDA120B 137 10 nC ns 10 10 µJ ns 10 µJ Notes: 1. RG is total gate resistance excluding internal gate driver impedance. 2. Eon2 includes energy of MSC015SDA120B freewheeling diode. The following table shows the body diode characteristics for the MSC040SMA120J device. T J = 25 °C unless otherwise specified. 050-7738 MSC040SMA120J Datasheet Revision B 3 Table 5 • Body Diode Characteristics 2.3 Symbol Parameter Test Conditions VSD Diode forward voltage ISD = 40 A, VGS = 0 V 3.9 V ISD = 40 A, VGS = –5 V 4.1 V ISD = 40 A, VGS = –5 V, VDD = 800 V, dl/dt = –1000 A/µs 100 ns 550 nC 12.5 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Min Typ Max Unit Typical Performance Curves This section shows the typical performance curves for the MSC040SMA120J device. Figure 1 • Drain Current vs. Drain-to-Source Voltage Figure 2 • Drain Current vs. Drain-to-Source Voltage Figure 3 • Drain Current vs. Drain-to-Source Voltage Figure 4 • Drain Current vs. Drain-to-Source Voltage Figure 5 • RDS(on) vs. Junction Temperature Figure 6 • Gate Charge Characteristics 050-7738 MSC040SMA120J Datasheet Revision B 4 Figure 5 • RDS(on) vs. Junction Temperature Figure 6 • Gate Charge Characteristics Figure 7 • Capacitance vs. Drain-to-Source Voltage Figure 8 • IDM vs. Gate-to-Source Voltage Figure 9 • IDM vs. VDS Third Quadrant Conduction Figure 10 • IDM vs. VDS Third Quadrant Conduction Figure 11 • VGS(th) vs. Junction Temperature Figure 12 • Forward Safe Operating Area 050-7738 MSC040SMA120J Datasheet Revision B 5 Figure 11 • VGS(th) vs. Junction Temperature Figure 12 • Forward Safe Operating Area Figure 13 • Maximum Transient Thermal Impedance 050-7738 MSC040SMA120J Datasheet Revision B 6 3 Package Specification This section shows the package specification for the MSC040SMA120J device. 3.1 Package Outline Drawing This section shows the SOT-227 package drawing for the MSC040SMA120J device. The dimensions in the figure below are in millimeters and (inches). Figure 14 • Package Outline Drawing 050-7738 MSC040SMA120J Datasheet Revision B 7 Microsemi Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 Email: sales.support@microsemi.com www.microsemi.com © 2019 Microsemi. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer's responsibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this document or to any products and services at any time without notice. Microsemi, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions; security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California, and has approximately 4,800 employees globally. Learn more at www. microsemi.com. 050-7738 | April 2019 | Preliminary 050-7738 MSC040SMA120J Datasheet Revision B 8