AON6756_101

AON6756 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (SRFET) • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application 30V 36A RDS(ON) (at VGS=10V) < 2.4mΩ RDS(ON) (at VGS = 4.5V) < 4mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial DFN5X6 Top View VDS ID (at VGS=10V) D Top View Bottom View 1 8 2 7 3 6 4 5 SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current G C V A 144 36 IDSM TA=70°C ±20 28 IDM TA=25°C Units V 36 ID TC=100°C Maximum 30 A 32 Avalanche Current C IAS 60 A Avalanche energy L=0.05mH C EAS 90 mJ VDS Spike VSPIKE 36 V Power Dissipation B 100ns TC=25°C PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev.2.0: July 2014 7.3 Steady-State Steady-State RθJA RθJC W 4.7 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 -55 to 150 Typ 14 40 1.1 www.aosmd.com °C Max 17 55 1.5 Units °C/W °C/W °C/W Page 1 of 6 AON6756 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=10mA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS, ID=250µA RDS(ON) Static Drain-Source On-Resistance 100 1.4 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd tD(on) nA 2.4 V 2 2.4 2.6 3.2 2.8 4 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 0.7 mΩ mΩ S 0.6 V 36 A 2796 SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge 100 90 VGS=0V, VDS=15V, f=1MHz mA 1.7 0.39 DYNAMIC PARAMETERS Ciss Input Capacitance Units V 0.5 TJ=125°C IGSS Max 30 VDS=30V, VGS=0V VGS(th) Coss Typ pF 1200 pF 165 pF 1.5 2.3 Ω 46.8 64 nC 22.3 30 nC 8.4 nC Gate Drain Charge 8.6 nC Turn-On DelayTime 9.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 6.3 ns 35.8 ns tf Turn-Off Fall Time 12.3 ns trr Body Diode Reverse Recovery Time Qrr IF=20A, dI/dt=500A/µs 20 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 40 ns nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using