找到BCY58相关的规格书共5,878
型号厂商描述数据手册替代料参考价格
0702871076MOLEX8[MolexElectronicsLtd.] 0702871076 - 2.54mm (.100") Pitch C-Grid® Header, Breakaway, Dual Row, Vertical, with RetentionPin, 58 Circuits, 8.13mm (.320") Mating Pin Length, Tin (Sn) Plating - Molex Electronics Ltd.获取价格
HN58X25256TIERENESAS[RenesasTechnologyCorp] HN58X25256TIE - Serial Peripheral Interface 128k EEPROM (16-kword × 8-bit) 256k EEPROM (32-kword × 8-bit) Electrically Erasable and Programmable Read Only Memory - Renesas Technology Corp获取价格
HN58X2432TIHITACHI[HitachiSemiconductor] HN58X2432TI - Two-wire serial interface 8k EEPROM (1-kword x 8-bit)/16k EEPROM (2-kword x 8-bit)/32k EEPROM (4-kword x 8-bit)/64k EEPROM(8-kword x 8-bit) - Hitachi Semiconductor获取价格
HN58X2432FPIAGERENESAS[RenesasTechnologyCorp] HN58X2432FPIAGE - Two-wire serial interface 8k EEPROM (1-kword × 8-bit)/16k EEPROM (2-kword × 8-bit) 32k EEPROM (4-kword × 8-bit)/64k EEPROM (8-kword × 8-bit) - Renesas Technology Corp获取价格
HN58X2408IRENESAS[RenesasTechnologyCorp] HN58X2408I - Two-wire serial interface 8k EEPROM (1-kword × 8-bit)/16k EEPROM (2-kword × 8-bit) 32k EEPROM (4-kword × 8-bit)/64k EEPROM (8-kword × 8-bit) - Renesas Technology Corp获取价格
OD-08JS58ESNEL[NelFrequencyControls,inc] OD-08JS58ES - Precision, Low Power Consumption, Fast Warm-up SC-cut OCXO in 20x20 mm Through Hole Package - Nel Frequency Controls,inc获取价格
0010897581MOLEX1[MolexElectronicsLtd.] 0010897581 - 2.54mm (.100") Pitch C-Grid® Breakaway Header, Dual Row, Vertical, High Temperature, 58 Circuits, Tin (Sn) Plating, 2.72mm (.107") PC Tail Length - Molex Electronics Ltd.获取价格
BZV55-C62,135Rubycon Corporation二极管配置:独立式;稳压值(标称值):-;稳压值(范围):58V~66V;精度:±5%;功率:500mW;反向电流(Ir):50nA@0.7V;阻抗(Zzt):80Ω;获取价格
SMAJ58AElecSuper最大耗散功率(W) 400 最大抵消电压(V) 58 最大反向电流(uA) 1 崩溃电压Min(V) 64.4 崩溃电压Max(V) 71.2 测试电流(mA) 1 最大脉冲电流(A) 4.3 最大嵌位电压(V) 93.6获取价格
SMCJ58ARubycon Corporation极性:单向;反向截止电压(Vrwm):58V;击穿电压:64.4V;反向漏电流(Ir):5uA;峰值脉冲电流(Ipp)@10/1000μs:16A;最大钳位电压:93.6V;获取价格
BZX85C62ST(先科)二极管配置:独立式;稳压值(标称值):62V;稳压值(范围):58V~66V;精度:-;功率:1.3W;反向电流(Ir):500nA@47V;阻抗(Zzt):125Ω;获取价格
MC7815BDTRKGMurata Manufacturing Co., Ltd.输出类型:固定;输出极性:正;输出通道数:1;最大输入电压:35V;输出电压:15V;压差:2V@(1A);输出电流:1A;电源纹波抑制比(PSRR):58dB@(120Hz);获取价格
SDV1005S5R5C030YPTFSUNLORDF最大工作电压(AC):4V 最大工作电压(DC):5.5V 压敏电压:31V~38V 钳位电压:58V 峰值浪涌电流:1A 能量:0.003J 静态电容:3pF@1MHz获取价格
A-70280-0069MOLEX1[MolexElectronicsLtd.] A-70280-0069 - 2.54mm (.100") Pitch C-Grid® Breakaway Header, Dual Row, Vertical, High Temperature, 58 Circuits, 0.38μm (15μ") Gold (Au) Selective Plating, Tin (Sn) PC Tail Plating, 2.72mm (.107") PC Tail - Molex Electronics Ltd.获取价格
A-70568-0027MOLEX2[MolexElectronicsLtd.] A-70568-0027 - 2.54mm (.100) Pitch C-Grid® Header, Through Hole, Dual Row, Vertical, High Temperature, Shrouded, with Peg, 58 Circuits, Tin (Sn) Plating - Molex Electronics Ltd.获取价格
A-70567-0095MOLEX2[MolexElectronicsLtd.] A-70567-0095 - 2.54mm (.100) Pitch C-Grid® Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 58 Circuits, 0.38μm (15μ) Gold (Au) Selective Plating - Molex Electronics Ltd.获取价格
87911-5811MOLEX10[MolexElectronicsLtd.] 87911-5811 - 2.54mm (.100) Pitch C-Grid® Header, Right Angle, Through Hole, 58 Circuits, 0.38μm (15μ) Gold (Au) Selective Plating, Tube Packaging, Lead-free - Molex Electronics Ltd.获取价格
15-47-7658MOLEX2[MolexElectronicsLtd.] 15-47-7658 - 2.54mm (.100) Pitch C-Grid® Header, Through Hole, Dual Row, Vertical, High Temperature, Shrouded, with Peg, 58 Circuits, 0.38μm (15μ) Gold (Au) Selective Plating - Molex Electronics Ltd.获取价格
15-47-7558MOLEX2[MolexElectronicsLtd.] 15-47-7558 - 2.54mm (.100) Pitch C-Grid® Header, Through Hole, Dual Row, Vertical, High Temperature, Shrouded, with Peg, 58 Circuits, Tin (Sn) Plating - Molex Electronics Ltd.获取价格
AFE58JD18Texas InstrumentsAFE58JD18 16-Channel, Ultrasound AFE with 14-Bit, 65-MSPS or 12-Bit, 80-MSPS ADC, Passive CW Mixer, I/Q Demodulator, and LVDS, JESD204B Outputs datasheet (Rev. A)获取价格