CMS70N04H8-HF

N-CHANNEL ENHANCEMENT MODE POWER MOSFET CMS70N04H8-HF Description Package Dimensions The CMS70N04H8-HF is using trench DOMS technology. This advnaced technology has been especially tailored to minimize minimize R DS(ON) , provide superior switching performance,and DFN5x6(PR-PAK) withstand high energy pulse in the avalanche and commutation mode. These devicesw are well suited for high efficiency fast switching applications. The CMS70N04H8-HF meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. Features REF. A A1 b c D F E2 •Advanced DMOS trench technology •Improve dv/dt capability •Green device available •Fast switching •100% EAS guaranteed Circuit diagram - G : Gate - S : Source - D : Drain Millimeter REF. Min. Nom. Max. 0.85 1.00 1.15 E 0.00 0.10 e 0.30 0.51 H 0.20 0.30 L 4.80 5.00 L1 α 1.10REF. 3.50REF. K Millimeter Min. Nom. Max. 5.70 5.90 1.27 5.90 6.20 0.60 0.06 0.20 0∘ 12∘ 3.70 3.90 4.10 D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Symbol Gate-Source Voltage Continuous Drain Current1 Pulsed Drain Current 1,2 Total Power Dissipation Single Pulse Avalanche Energy, L=0.1mH 3 Single Pulse Avalanche Current, L=0.1mH 3 Operating Junction and Storage Temperature Range VDS Ratings 40 Unit V VGS ± 20 V ID @TC=25℃ 70 A I D @TC=100℃ 44 A IDM 280 A PD @TC=25℃ 72.3 W PD @TA=25℃ 2 W EAS 61 mJ IAS 35 A TJ, TSTG -55 ~ +150 ℃ Thermal Data Parameter Thermal Resistance Junction-ambient2 2 Thermal Resistance Junction-case Symbol RθJA Conditions Steady State Max. Value 62.5 Unit ℃/W RθJC Steady State 1.73 ℃/W Company reserves the right to improve product design , functions and reliability without notice. REV: A SP-JTR42 Page 1 Comchip Technology CO., LTD. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Electrical Characteristics (T J=25 ̊C unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BV DSS 40 - - V V GS =0, I D =250uA Gate Threshold Voltage V GS(th) 1.2 1.6 2.5 V V DS = V GS , I D = 250uA I GSS - - ±100 nA V GS =±20V - - 1 uA V DS = 40V,V GS =0 - - 10 uA V DS = 32V,V GS =0 - 6.9 8.5 - 9.1 12 Parameter Gate-Source Leakage Current Drain-Source Leakage Current ( T J = 25̊ C ) I DSS Drain-Source Leakage Current ( T J = 85̊ C ) Static Drain-Source On-Resistance2 2 R DS(on) mΩ Test Conditions V GS =10V,I D =20A V GS =4.5V, I D = 10A Total Gate Charge Qg - 19.7 - Gate-Source Charge Q gs - 2.8 - Gate-Drain (“Miller”) Change Q gd - 5.1 - V GS = 10V T d(on) - 13.2 - V DD =15V Tr - 2.2 - T d(off) - 72 - V GS =10V Tf - 4.5 - R G =3.3Ω Input Capacitance C iss - 1278 - V GS = 0V Output Capacitance C oss - 135 - Reverse Transfer Capacitance C rss - 87 - Gate Resistance Rg - 2.2 - Ω Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time I D = 10A nC ns pF V DS = 20V I D = 1A V DS = 25V f=1.0MH Z f=1.0MH Z Guaranteed Avalanche Characteristics Parameter Single Pulse Avalanche Energy 5 Symbol Min. Typ. Max. Unit EAS 16 - - mJ Symbol Min. Typ. Max. Unit Test Conditions V DS - - 1.2 V I S =20A,V GS =0V,T J =25 ̊C IS - - 70 A I SM - - 140 A Test Conditions VDD=25V, L=0.1mH, IAS=18A Source-Drain Diode Parameter Diode Forward Voltage 2 Continuous Source Current Pulsed Source Current 2,6 1,6 V G =V D =0V,Force Current Notes: 1.The data tested by surface mounted on a 1 inch2FR-4 board with 2OZ copper. 2.The data tested by pulsed,pulse width ≤ 300us,duty cycle ≤ 2%. 3.The EAS data shows Max. rating. The test condition is V DD =25V,V GS =10V,L=0.1mH,I AS =35A. 4.The power dissipation is limited by 150 ̊C junction temperature. 5. The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM,in real applications,should be limited by total power dissipation. Company reserves the right to improve product design , functions and reliability without notice. REV: A SP-JTR42 Page 2 Comchip Technology CO., LTD. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Typical Characteristics 10 V GS Gate-to-source Voltage(V) I D Drain Current(A) 70 56 42 28 14 V DS =20V I D =10A 8 6 4 2 0 0 25 75 50 100 125 150 0 5 TC Case Temperature( ̊ C ) Fig.2 Gate Charge Characteristics 1.3 2.0 Normalized On-Resistance Normalized Gate Threshold Voltage(V) 20 15 Q G Gate Charge(nC) Fig.1 Drain Current vs.T C 1.1 0.9 0.7 0.5 -50 0 50 100 1.5 1.0 0.5 0 --50 150 0 T J Junction Temperature( ̊ C ) 100 10 1 0 .1 0 .1 1 10 100 100 150 Fig.4 Normalized R DSON VS. T J Normalized Thermal Response(R θJC ) 1000 50 T J Junction Temperature( ̊ C ) Fig.3 Normalized V GS(th) VS. T J I D Drain Current(A) 10 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS Drain-to-source Voltage(V) t Pulse Width(sec) Fig.5 Safe Operating Area Fig.6 Transient Thermal Impedance Company reserves the right to improve product design , functions and reliability without notice. REV: A SP-JTR42 Page 3 Comchip Technology CO., LTD. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 10V Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform Company reserves the right to improve product design , functions and reliability without notice. REV: A SP-JTR42 Page 4 Comchip Technology CO., LTD. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Reel Taping Specification d P1 E P0 T F W B P C A 12 o 0 D2 D1 D W1 Trailer Tape 50±2 Empty Pockets DFN5x6 (PR-PAK) Symbol A (mm) 6.50 ± 0.10 (inch) DFN5x6 (PR-PAK) Leader Tape 140±2 Empty Pockets Components B 5.30 ± 0.10 C d 1.40 ± 0.10 1.50 ± 0.05 D D1 330.00 ± 2.00 178.00 ± 2.00 D2 13.00 ± 1.00 0.256 ± 0.004 0.209 ± 0.004 0.055 ± 0.004 0.059 ± 0.002 12.992 ± 0.079 7.008 ± 0.079 0.512 ± 0.039 Symbol E F P P0 P1 T W W1 (mm) 1.75 ± 0.10 5.50 ± 0.05 8.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05 0.30 ± 0.05 12.00 ± 0.30 18.40 ± 1.00 (inch) 0.069 ± 0.004 0.217 ± 0.002 0.315 ± 0.004 0.157 ± 0.004 0.079 ± 0.002 0.012 ± 0.002 0.472 ± 0.012 0.724 ± 0.039 Company reserves the right to improve product design , functions and reliability without notice. REV: A SP-JTR42 Page 5 Comchip Technology CO., LTD. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Marking Code Marking Code Part Number CMS70N04H8 40N09 40N09 Suggested PAD Layout Dimensions A B C D E F G H I xxxx Control Code A D Value (in mm) 4.420 3.810 6.610 1.020 0.610 0.660 1.270 0.820 1.270 B C G H I E F Note: 1.The pad layout is for reference purposes only. Standard Packaging REEL PACK Case Type DFN5x6 (PR-PAK) REEL Reel Size ( pcs ) (inch) 3,000 13 Company reserves the right to improve product design , functions and reliability without notice. REV: A SP-JTR42 Page 6 Comchip Technology CO., LTD.