| H5783-06 | HAMAMATSU[HamamatsuCorporation] | H5783-06 - Photosensor Modules - Hamamatsu Corporation | | | 获取价格 |
| S1787-12 | HAMAMATSU[HamamatsuCorporation] | S1787-12 - Si photodiode Plastic package photodiode with low dark current - Hamamatsu Corporation | | | 获取价格 |
| S1787-08 | HAMAMATSU[HamamatsuCorporation] | S1787-08 - Si photodiode Plastic package photodiode with low dark current - Hamamatsu Corporation | | | 获取价格 |
| C11440-50B | HAMAMATSU[HamamatsuCorporation] | C11440-50B - Live cells expressing GFP Time lapse fluorescence imaging - Hamamatsu Corporation | | | 获取价格 |
| C11440 | HAMAMATSU[HamamatsuCorporation] | C11440 - Live cells expressing GFP Time lapse fluorescence imaging - Hamamatsu Corporation | | | 获取价格 |
| S1336-44BQ | HAMAMATSU[HamamatsuCorporation] | S1336-44BQ - Si photodiode UV to near IR for precision photometry - Hamamatsu Corporation | | | 获取价格 |
| S1336 | HAMAMATSU[HamamatsuCorporation] | S1336 - Si photodiode UV to near IR for precision photometry - Hamamatsu Corporation | | | 获取价格 |
| S1227-33BR | HAMAMATSU[HamamatsuCorporation] | S1227-33BR - Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity - Hamamatsu Corporation | | | 获取价格 |
| S1227-16BR | HAMAMATSU[HamamatsuCorporation] | S1227-16BR - Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity - Hamamatsu Corporation | | | 获取价格 |
| S1227-1010BR | HAMAMATSU[HamamatsuCorporation] | S1227-1010BR - Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity - Hamamatsu Corporation | | | 获取价格 |
| S1226-44BQ | HAMAMATSU[HamamatsuCorporation] | S1226-44BQ - SI PHOTO DIODE - Hamamatsu Corporation | | | 获取价格 |
| S1226-44BK | HAMAMATSU[HamamatsuCorporation] | S1226-44BK - SI PHOTO DIODE - Hamamatsu Corporation | | | 获取价格 |
| S1226-18BQ | HAMAMATSU[HamamatsuCorporation] | S1226-18BQ - Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity - Hamamatsu Corporation | | | 获取价格 |
| S1226-18BK | HAMAMATSU[HamamatsuCorporation] | S1226-18BK - Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity - Hamamatsu Corporation | | | 获取价格 |
| S11499-01 | HAMAMATSU[HamamatsuCorporation] | S11499-01 - Large area, enhanced near IR sensitivity, using a MEMS technology - Hamamatsu Corporation | | | 获取价格 |
| C10633-13 | HAMAMATSU[HamamatsuCorporation] | C10633-13 - Good sensitivity in 900 nm to 1700 nm range 320 × 256 pixels with EIA - Hamamatsu Corporation | | | 获取价格 |
| C10372 | HAMAMATSU[HamamatsuCorporation] | C10372 - HIGH PERFORMANCE THERMOELECTRIC COOLERS - Hamamatsu Corporation | | | 获取价格 |
| S10811 | HAMAMATSU[HamamatsuCorporation] | S10811 - Front-illuminated FFT-CCD for X-ray imaging - Hamamatsu Corporation | | | 获取价格 |
| S10202-16 | HAMAMATSU[HamamatsuCorporation] | S10202-16 - Back-thinned TDI-CCD Operating the back-thinned CCD in TDI mode delivers high sensitivity. - Hamamatsu Corporation | | | 获取价格 |
| S10141-1109S | HAMAMATSU[HamamatsuCorporation] | S10141-1109S - CCD area image sensor Low readout noise, high resolution (pixel size: 12 μm) - Hamamatsu Corporation | | | 获取价格 |
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