IRG7T200CL12B

IRG5K50P5K50PM06E IRG7T200CL12B VCES = 1200V IC = 200A at TC = 80°C Low-Side Chopper IGBT with High-Side Diode POWIR 62™ Package tSC ≥ 10µsec VCE(ON) = 1.90V at IC = 200A Applications：  Industrial Motor Drive Uninterruptible Power Supply Welding and Cutting Machine Switched Mode Power Supply    Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications RBSOA Tested 10µsec Short Circuit Safe Operating Area Rugged Transient Performance POWIR 62™ Package Industry Standard Lead Free RoHS Compliant, Environmental Friendly Base Part Number Package Type Standard Pack Quantity Orderable Part Number IRG7T200CL12B POWIR 62™ Box 45 IRG7T200CL12B Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 1200 V VGES Continuous Gate to Emitter Voltage ±20 V IC Continuous Collector Current TC = 80°C 200 A TC = 25°C 390 A ICM Pulse Collector Current TJ = 175°C 400 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 175°C 1060 W TJ Maximum IGBT Junction Temperature 175 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature -40 to +125 °C 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7T200CL12B Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Min. V(BR)CES Collector to Emitter Breakdown Voltage VGE(th) Gate Threshold Voltage VCE(ON) Collector to Emitter Saturation Voltage ICES Collector to Emitter Leakage Current IGES Gate to Emitter Leakage Current RGint Internal Gate Resistance Typ. Max. 1200 5.0 Unit Test Conditions V VGE = 0V, IC = 2mA 5.8 6.5 V IC = 10mA, VCE = VGE 1.90 2.20 V TJ = 25°C V TJ = 125°C 2.20 IC = 200A, VGE = 15V 2 mA VGE = 0V, VCE = VCES 400 nA VGE = ±20V, VCE = 0 1.25 Ω Switching Characteristics of IGBT Parameter Min. Typ. 355 td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Eon Turn-on Switching Loss Eoff Turn-off Switching Loss Qg Total Gate Charge 1800 Cies Input Capacitance 22.5 Coes Output Capacitance 1.56 Cres Reverse Transfer Capacitance 0.94 RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 2 320 200 210 525 560 170 190 24.6 33.0 12.7 17.2 Max. Unit ns ns ns ns mJ mJ nC nF www.irf.com © 2014 International Rectifier TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCC=600V, IC = 200A, RG = 10Ω, VGE=±15V, Inductive Load TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCE = 25V, VGE = 0V, f ＝1MHz, TJ = 25°C IC = 400A,VCC = 960V, VP =1200V, RG = 15Ω, VGE = +15V to 0V, TJ = 150°C Trapezoid 10 Test Conditions μs VCC = 600V, VGE = 15V, TJ = 150°C Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7T200CL12B Absolute Maximum Ratings of Freewheeling Diode VRRM IF IFM Repetitive Peak Reverse Voltage 1200 Diode Continuous Forward Current, TC = 25°C 400 Diode Continuous Forward Current, TC = 80°C 200 Pulse Diode Current 400 V A A Electrical and Switching Characteristics of Freewheeling Diode Parameter VF Forward Voltage Irr Peak Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy Typ. Max. 2.00 2.70 2.20 70 Unit V A 110 10.6 µC 22.3 3.7 mJ 8.1 Test Conditions TJ = 25°C TJ = 125°C IF = 200A , VGE = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF＝200A, di/dt=1100A/μs, Vrr = 600V, VGE = -15V TJ = 125°C Absolute Maximum Ratings of Brake-Chopper Diode VRRM IF IFM Repetitive Peak Reverse Voltage 1200 Diode Continuous Forward Current, TC = 25°C 400 Diode Continuous Forward Current, TC = 80°C 200 Pulse Diode Current 400 V A A Electrical and Switching Characteristics of Brake-Chopper Diode Parameter VF Forward Voltage Irr Peak Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy 3 www.irf.com © 2014 International Rectifier Typ. Max. 2.00 2.70 2.20 70 110 10.6 22.3 3.7 8.1 Unit V A µC mJ Test Conditions TJ = 25°C TJ = 125°C IF = 200A , VGE = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF＝200A, di/dt=1100A/μs, Vrr = 600V, VGE = -15V TJ = 125°C Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7T200CL12B Module Characteristics Parameter Min. Typ. Max. Unit 2500 V Viso Isolation Voltage (All Terminals Shorted), f = 50Hz, 1minute RθJC Junction-to-Case (IGBT) 0.141 °C/W RθJC Junction-to-Case (Freewheeling Diode) 0.204 °C/W RθJC Junction-to-Case (Brake-Chopper Diode) 0.204 °C/W RθCS Case-To-Sink (Conductive Grease Applied) 0.1 °C/W M Power Terminals Screw: M6 3.0 5.0 N·m M Mounting Screw: M6 4.0 6.0 N·m G Weight 4 www.irf.com © 2014 International Rectifier 230 Submit Datasheet Feedback g October 1, 2014 IRG5K50P5K50PM06E IRG7T200CL12B 400 400 VGE =15V TJ =125°C 360 320 200 200 IC (A) 240 160 120 80 80 40 40 0.8 1.2 1.6 2.0 VCE (V) 2.4 2.8 3.2 VGE =9V 0 0.0 3.6 0.6 1.2 1.8 2.4 VCE (V) 3.0 3.6 4.2 Fig.2 Typical IGBT Output Characteristics Fig.1 Typical IGBT Saturation Characteristics 400 50 360 VGE =0V TJ =125°C 320 VGE =0V,f =1MHz Cies 40 Coes TJ =25°C 280 30 C (nF) 240 IF (A) VGE =13V VGE =11V 160 120 0.4 VGE =17V VGE =15V 280 240 0 0.0 TJ =125°C 320 TJ =25°C 280 IC (A) 360 200 160 20 120 80 10 40 0 0.0 0.6 1.2 1.8 VF (V) 2.4 3.0 0 3.6 80 VCE (V) 15 20 25 50 50 E (mJ) 40 30 20 20 10 10 80 120 160 200 240 IC (A) 280 320 360 400 Fig.5 Typical Switching Loss vs. Collector Current www.irf.com © 2014 International Rectifier Erec 40 30 40 Eoff Eon 60 Erec 0 VCC =600V,VGE =+/-15V, IC =200A,TJ =125°C 70 Eoff Eon 60 E (mJ) 10 80 VCC =600V,VGE =+/-15V, Rg =10 ohm,TJ =125°C 70 5 5 Fig. 4 Typical Capacitance Characteristics Fig.3 Typical Forward Characteristics, Freewheeling Diode 0 0 0 0 5 10 15 Rg () 20 25 30 Fig.6 Typical Switching Loss vs. Gate Resistance Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7T200CL12B 240 400 Duty Cycle:50% TJ =125°C 200 300 Rg =10 ohm,VGE =15V IC (A) Load Current (A) TC =80°C 160 Square Wave: 120 Vcc 80 200 I 100 40 0 Module Chip Diode as specified 1 10 Frequency (KHz) 0 100 Fig.7 Typical Load Current vs. Frequency 0 400 600 800 VCES (V) 1000 1200 Fig.8 Reverse Bias Safe Operation Area (RBSOA) 0.20 0.25 ZthJC:IGBT ZthJC:Diode 0.20 ZthJC (K/W) 0.15 ZthJC (K/W) 200 0.10 0.05 0.15 0.10 0.05 0.00 0.001 0.01 0.1 1 2 t (s) 0.00 0.001 0.01 t ( s) 0.1 1 2 Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode) 400 360 320 280 VGE =0V TJ =125°C TJ =25°C IF (A) 240 200 160 120 80 40 0 0.0 0.6 1.2 1.8 VF (V) 2.4 3.0 3.6 Fig.11 Typical Forward Characteristics, Brake-Chopper Diode 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7T200CL12B Internal Circuit: Package Outline (Unit: mm): 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7T200CL12B Qualification Information† Qualification Level Industrial Moisture Sensitivity Level Yes RoHS Compliant † Not Applicable Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA To contact International Rectifier, please visit: http://www.irf.com/whoto-call/ 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014