IRG7T150CL12B

IRG5K50P5K50PM06E IRG7T150CL12B VCES = 1200V IC = 150A at TC = 80°C Low-Side Chopper IGBT with High-Side Diode POWIR 62™ Package tSC ≥ 10µsec VCE(ON) = 1.90V at IC = 150A Applications：  Industrial Motor Drive Uninterruptible Power Supply Welding and Cutting Machine Switched Mode Power Supply    Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications RBSOA Tested 10µsec Short Circuit Safe Operating Area Rugged Transient Performance POWIR 62™ Package Industry Standard Lead Free RoHS Compliant, Environmental Friendly Base Part Number Package Type Standard Pack Quantity Orderable Part Number IRG7T150CL12B POWIR 62™ Box 45 IRG7T150CL12B Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 1200 V VGES Continuous Gate to Emitter Voltage ±20 V IC Continuous Collector Current TC = 80°C 150 A TC = 25°C 300 A ICM Pulse Collector Current TJ = 175°C 300 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 175°C 910 W TJ Maximum IGBT Junction Temperature 175 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature -40 to +125 °C 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7T150CL12B Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Min. V(BR)CES Collector to Emitter Breakdown Voltage VGE(th) Gate Threshold Voltage VCE(ON) Collector to Emitter Saturation Voltage ICES Collector to Emitter Leakage Current IGES Gate to Emitter Leakage Current RGint Internal Gate Resistance Typ. Max. 1200 5.0 Unit Test Conditions V VGE = 0V, IC = 1mA 5.8 6.5 V IC = 7mA, VCE = VGE 1.90 2.20 V TJ = 25°C V TJ = 125°C 2.20 IC = 150A, VGE = 15V 1 mA VGE = 0V, VCE = VCES 400 nA VGE = ±20V, VCE = 0 1.25 Ω Switching Characteristics of IGBT Parameter Min. Typ. 235 td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Eon Turn-on Switching Loss Eoff Turn-off Switching Loss Qg Total Gate Charge 1230 Cies Input Capacitance 20.2 Coes Output Capacitance 1.15 Cres Reverse Transfer Capacitance 0.75 RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 2 220 115 120 360 380 160 230 9.1 12.2 7.5 11.5 Max. Unit ns ns ns ns mJ mJ nC nF www.irf.com © 2014 International Rectifier TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCC=600V, IC = 150A, RG = 6.2Ω, VGE=±15V, Inductive Load TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCE = 25V, VGE = 0V, f ＝1MHz, TJ = 25°C IC = 300A,VCC = 960V, VP =1200V, RG = 15Ω, VGE = +15V to 0V, TJ = 150°C Trapezoid 10 Test Conditions μs VCC = 600V, VGE = 15V, TJ = 150°C Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7T150CL12B Absolute Maximum Ratings of Freewheeling Diode VRRM IF IFM Repetitive Peak Reverse Voltage 1200 Diode Continuous Forward Current, TC = 25°C 300 Diode Continuous Forward Current, TC = 80°C 150 Pulse Diode Current 200 V A A Electrical and Switching Characteristics of Freewheeling Diode Parameter VF Forward Voltage Irr Peak Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy Typ. Max. 2.20 2.70 2.40 75 Unit V A 110 7.1 µC 13.0 3.0 mJ 5.6 Test Conditions TJ = 25°C TJ = 125°C IF = 150A , VGE = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF＝150A, di/dt=1560A/μs, Vrr = 600V, VGE = -15V TJ = 125°C Absolute Maximum Ratings of Brake-Chopper Diode VRRM IF IFM Repetitive Peak Reverse Voltage 1200 Diode Continuous Forward Current, TC = 25°C 300 Diode Continuous Forward Current, TC = 80°C 150 Pulse Diode Current 300 V A A Electrical and Switching Characteristics of Brake-Chopper Diode Parameter VF Forward Voltage Irr Peak Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy 3 www.irf.com © 2014 International Rectifier Typ. Max. 2.20 2.70 2.40 75 110 7.1 13.0 3.0 5.6 Unit V A µC mJ Test Conditions TJ = 25°C TJ = 125°C IF = 150A , VGE = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF＝150A, di/dt=1560A/μs, Vrr = 600V, VGE = -15V TJ = 125°C Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7T150CL12B Module Characteristics Parameter Min. Typ. Max. Unit 2500 V Viso Isolation Voltage (All Terminals Shorted), f = 50Hz, 1minute RθJC Junction-to-Case (IGBT) 0.165 °C/W RθJC Junction-to-Case (Freewheeling Diode) 0.280 °C/W RθJC Junction-to-Case (Brake-Chopper Diode) 0.28 °C/W RθCS Case-To-Sink (Conductive Grease Applied) 0.1 °C/W M Power Terminals Screw: M6 3.0 5.0 N·m M Mounting Screw: M6 4.0 6.0 N·m G Weight 4 www.irf.com © 2014 International Rectifier 230 Submit Datasheet Feedback g October 1, 2014 IRG5K50P5K50PM06E IRG7T150CL12B 300 300 270 270 VGE =15V TJ =125°C 240 TJ =25°C 210 150 150 IC (A) IC (A) 180 120 90 60 60 30 30 0.8 1.2 1.6 2.0 VCE (V) 2.4 2.8 3.2 VGE =13V VGE =11V VGE =9V 120 90 0.4 VGE =17V VGE =15V 210 180 0 0.0 TJ =125°C 240 0 0.0 3.6 0.4 0.8 1.2 1.6 2.0 VCE (V) 2.4 2.8 3.2 3.6 Fig.2 Typical IGBT Output Characteristics Fig.1 Typical IGBT Saturation Characteristics 300 60 270 VGE =0V TJ =125°C 240 TJ =25°C 210 VGE =0V,f =1MHz Cies 50 Coes 40 C (nF) IF (A) 180 150 120 30 20 90 60 10 30 0 0.0 0.4 0.8 1.2 1.6 2.0 VF (V) 2.4 2.8 3.2 0 3.6 5 10 15 20 25 VCE (V) Fig. 4 Typical Capacitance Characteristics Fig.3 Typical Forward Characteristics, Freewheeling Diode 40 28 VCC =600V,VGE =+/-15V, IC =150A,TJ =125°C VCC =600V,VGE =+/-15V, Rg =6.2 ohm,TJ =125°C 20 Eoff Eon 16 Erec Eoff Eon 30 Erec E (mJ) 24 E (mJ) 0 12 8 20 10 4 0 0 30 60 90 120 150 180 IC (A) 210 240 270 300 Fig.5 Typical Switching Loss vs. Collector Current 5 www.irf.com © 2014 International Rectifier 0 0 5 10 15 Rg () 20 25 30 Fig.6 Typical Switching Loss vs. Gate Resistance Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7T150CL12B 180 Duty Cycle:50% TJ =125°C 300 150 TC =80°C 250 Rg =6.2 ohm,VGE =15V 120 Vcc 90 I 60 30 0 200 Square Wave: IC (A) Load Current (A) 210 150 100 1 Module Chip 50 Diode as specified 10 Frequency (KHz) 0 100 Fig.7 Typical Load Current vs. Frequency 0 400 600 800 VCES (V) 1000 1200 Fig.8 Reverse Bias Safe Operation Area (RBSOA) 0.20 0.4 ZthJC:Diode ZthJC:IGBT 0.3 ZthJC (K/W) 0.15 ZthJC (K/W) 200 0.10 0.2 0.1 0.05 0.00 0.001 0.01 0.1 1 2 t (s ) 0.0 0.001 0.01 t ( s) 0.1 1 2 Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode) 300 270 240 210 VGE =0V TJ =125°C TJ =25°C IF (A) 180 150 120 90 60 30 0 0.0 0.4 0.8 1.2 1.6 2.0 VF (V) 2.4 2.8 3.2 3.6 Fig.11 Typical Forward Characteristics, Brake-Chopper Diode 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7T150CL12B Internal Circuit: Package Outline (Unit: mm): 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG7T150CL12B Qualification Information† Qualification Level Industrial Moisture Sensitivity Level Yes RoHS Compliant † Not Applicable Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA To contact International Rectifier, please visit: http://www.irf.com/whoto-call/ 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014