IRGP4063DPBF

IRGP4063DPbF IRGP4063D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package C VCES = 600V IC = 48A, TC = 100°C tSC ≥ 5μs, TJ(max) = 175°C G VCE(on) typ. = 1.65V E n-channel Benefits • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI C G E C G C G IRGP4063D-EPbF IRGP4063DPbF G Gate E C Collector E Emitter Absolute Maximum Ratings Max. Units V CES Collector-to-Emitter Voltage Parameter 600 V IC @ TC = 25°C Continuous Collector Current 96 IC @ TC = 100°C Continuous Collector Current 48 ICM Pulse Collector Current ILM Clamped Inductive Load Current IF @ TC = 25°C Diode Continous Forward Current 200 c 192 A 96 IF @ TC = 100°C Diode Continous Forward Current IFM Diode Maximum Forward Current e 192 V GE Continuous Gate-to-Emitter Voltage ±20 Transient Gate-to-Emitter Voltage ±30 P D @ TC = 25°C Maximum Power Dissipation 330 P D @ TC = 100°C Maximum Power Dissipation 170 TJ Operating Junction and TSTG Storage Temperature Range 48 V W -55 to +175 °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Thermal Resistance Min. Typ. Max. Units RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) Parameter ––– ––– 0.45 °C/W RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 0.92 RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 ––– RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40 1 www.irf.com © 2013 International Rectifier March 15, 2013 IRGP4063DPbF/IRGP4063D-EPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES Collector-to-Emitter Breakdown Voltage Min. Typ. 600 — Max. Units — ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage — 0.30 — — 1.65 2.14 VCE(on) Collector-to-Emitter Saturation Voltage — 2.0 — — 2.05 — VGE(th) Gate Threshold Voltage 4.0 — 6.5 ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient — -21 — gfe ICES Forward Transconductance — 32 — Collector-to-Emitter Leakage Current — 1.0 150 — 450 1000 — 1.95 2.91 — 1.45 — — — ±100 VFM Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current V Conditions VGE = 0V, IC = 150μA Ref.Fig f CT6 V/°C VGE = 0V, IC = 1mA (25°C-175°C) IC = 48A, VGE = 15V, TJ = 25°C V CT6 5,6,7 IC = 48A, VGE = 15V, TJ = 150°C 9,10,11 IC = 48A, VGE = 15V, TJ = 175°C V VCE = VGE, IC = 1.4mA 9, 10, mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) S VCE = 50V, IC = 48A, PW = 80μs μA VGE = 0V, VCE = 600V V IF = 48A 11, 12 VGE = 0V, VCE = 600V, TJ = 175°C 8 IF = 48A, TJ = 175°C nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Min. Typ. Qg Total Gate Charge (turn-on) Parameter — 95 Max. Units 140 Qge Gate-to-Emitter Charge (turn-on) — 28 42 Qgc Gate-to-Collector Charge (turn-on) — 35 53 Eon Turn-On Switching Loss — 625 1141 Eoff Turn-Off Switching Loss — 1275 1481 Etotal Total Switching Loss — 1900 2622 td(on) Turn-On delay time — 60 78 tr Rise time — 40 56 Conditions Ref.Fig IC = 48A nC 24 VGE = 15V CT1 VCC = 400V IC = 48A, VCC = 400V, VGE = 15V μJ CT4 RG = 10Ω, L = 200μH, LS = 150nH, TJ = 25°C Energy losses include tail & diode reverse recovery IC = 48A, VCC = 400V, VGE = 15V ns CT4 RG = 10Ω, L = 200μH, LS = 150nH, TJ = 25°C td(off) Turn-Off delay time — 145 176 tf Fall time — 35 46 Eon Turn-On Switching Loss — 1625 — Eoff Turn-Off Switching Loss — 1585 — Etotal Total Switching Loss — 3210 — Energy losses include tail & diode reverse recovery td(on) Turn-On delay time — 55 — IC = 48A, VCC = 400V, VGE = 15V tr Rise time — 45 — td(off) Turn-Off delay time — 165 — tf Fall time — 45 — Cies Input Capacitance — 3025 — Coes Output Capacitance — 245 — VCC = 30V Cres Reverse Transfer Capacitance — 90 — f = 1.0Mhz TJ = 175°C, IC = 192A 4 RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2 SCSOA Short Circuit Safe Operating Area 5 IC = 48A, VCC = 400V, VGE=15V μJ ns RG=10Ω, L=200μH, LS=150nH, TJ = 175°C f 13, 15 CT4 WF1, WF2 14, 16 RG = 10Ω, L = 200μH, LS = 150nH CT4 TJ = 175°C WF1 WF2 pF VGE = 0V 23 Rg = 10Ω, VGE = +15V to 0V — — μs VCC = 400V, Vp =600V 22, CT3 Rg = 10Ω, VGE = +15V to 0V Erec trr Reverse Recovery Energy of the Diode Irr WF4 — μJ TJ = 175°C 115 — ns VCC = 400V, IF = 48A 40 — A VGE = 15V, Rg = 10Ω, L =200μH, Ls = 150nH — 845 Diode Reverse Recovery Time — Peak Reverse Recovery Current — 17, 18, 19 20, 21 WF3 Notes:  VCC = 80% (VCES), VGE = 20V, L = 200μH, RG = 10Ω. ‚ This is only applied to TO-247AC package. ƒ Pulse width limited by max. junction temperature. „ Refer to AN-1086 for guidelines for measuring V(BR)CES safely. 2 www.irf.com © 2013 International Rectifier March 15, 2013 IRGP4063DPbF/IRGP4063D-EPbF 100 350 90 300 80 250 70 200 Ptot (W) IC (A) 60 50 40 150 30 100 20 50 10 0 0 0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200 T C (°C) T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 1000 1000 100 10μsec 100 1msec 10 IC (A) IC (A) 100μsec DC 10 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 10 100 1 1000 10 VCE (V) 200 180 180 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 120 160 100 80 120 100 80 60 60 40 40 20 20 0 0 0 2 4 6 8 10 VCE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80μs 3 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 140 ICE (A) ICE (A) Fig. 4 - Reverse Bias SOA TJ = 175°C; VGE =15V 200 140 1000 VCE (V) Fig. 3 - Forward SOA TC = 25°C, TJ ≤ 175°C; VGE =15V 160 100 www.irf.com © 2013 International Rectifier 0 2 4 6 8 10 VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80μs March 15, 2013 IRGP4063DPbF/IRGP4063D-EPbF 200 200 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 180 160 160 140 120 -40°c 25°C 175°C 120 IF (A) ICE (A) 140 180 100 100 80 80 60 60 40 40 20 20 0 0 0 2 4 6 8 10 0.0 1.0 2.0 Fig. 8 - Typ. Diode Forward Characteristics tp = 80μs 20 20 18 18 16 16 14 14 ICE = 24A ICE = 48A VCE (V) VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 80μs 10 ICE = 96A 8 12 ICE = 24A ICE = 48A 10 ICE = 96A 8 6 6 4 4 2 2 0 0 5 10 15 20 5 10 VGE (V) 18 180 16 160 14 140 ICE = 24A ICE = 48A ICE = 96A 8 ICE (A) VCE (V) 200 10 20 Fig. 10 - Typical VCE vs. VGE TJ = 25°C 20 12 15 VGE (V) Fig. 9 - Typical VCE vs. VGE TJ = -40°C T J = 25°C T J = 175°C 120 100 80 6 60 4 40 2 20 0 0 5 10 15 20 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 175°C 4 4.0 VF (V) VCE (V) 12 3.0 www.irf.com © 2013 International Rectifier 0 5 10 15 VGE (V) Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10μs March 15, 2013 IRGP4063DPbF/IRGP4063D-EPbF 6000 1000 5000 Swiching Time (ns) EOFF Energy (μJ) 4000 EON 3000 2000 tdOFF 100 tdON tF tR 1000 0 10 0 50 100 150 0 20 40 60 80 100 IC (A) IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V Fig. 14 - Typ. Switching Time vs. IC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V 5000 1000 4500 tdOFF EOFF Swiching Time (ns) Energy (μJ) 4000 EON 3500 3000 2500 tR tdON 100 tF 2000 1500 1000 10 0 25 50 75 100 125 0 25 Fig. 15 - Typ. Energy Loss vs. RG TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V 100 125 Fig. 16 - Typ. Switching Time vs. RG TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V 45 45 40 40 RG = 10Ω 35 35 30 RG = 22Ω 25 20 IRR (A) IRR (A) 75 RG (Ω) Rg (Ω) RG = 47Ω 15 RG = 100Ω 10 30 25 20 15 5 0 10 0 20 40 60 80 100 IF (A) Fig. 17 - Typ. Diode IRR vs. IF TJ = 175°C 5 50 www.irf.com © 2013 International Rectifier 0 25 50 75 100 125 RG (Ω) Fig. 18 - Typ. Diode IRR vs. RG TJ = 175°C March 15, 2013 IRGP4063DPbF/IRGP4063D-EPbF 45 4000 40 3500 96A 3000 QRR (nC) IRR (A) 35 30 25 2500 100Ω 22Ω 47Ω 2000 20 10Ω 48A 24A 1500 15 1000 10 0 200 400 600 800 0 1000 500 diF /dt (A/μs) 1500 Fig. 20 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C Fig. 19 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 48A; TJ = 175°C 18 400 RG = 10Ω 16 350 RG = 22Ω 14 300 12 250 10 200 8 150 6 100 900 800 1000 diF /dt (A/μs) 500 400 RG = 47Ω 300 RG = 100Ω 200 100 0 50 4 0 20 40 60 80 100 8 10 12 IF (A) 16 18 Fig. 22 - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C 10000 16 VGE, Gate-to-Emitter Voltage (V) Cies Capacitance (pF) 14 VGE (V) Fig. 21 - Typ. Diode ERR vs. IF TJ = 175°C 1000 Coes 100 Cres 10 V CES = 300V 14 V CES = 400V 12 10 8 6 4 2 0 0 20 40 60 80 100 VCE (V) 6 Current (A) Energy (μJ) 600 Time (μs) 700 Fig. 23 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz www.irf.com © 2013 International Rectifier 0 25 50 75 100 Q G, Total Gate Charge (nC) Fig. 24 - Typical Gate Charge vs. VGE ICE = 48A; L = 600μH March 15, 2013 IRGP4063DPbF/IRGP4063D-EPbF 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 τJ R1 R1 τJ τ1 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 R2 R2 τ2 τ1 R3 R3 τ3 τ2 τC τ τ3 Ri (°C/W) τi (sec) 0.0872 0.000114 0.1599 0.001520 0.2020 Ci= τi/Ri Ci i/Ri 0.020330 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 0.01 τJ SINGLE PULSE ( THERMAL RESPONSE ) 0.001 0.0001 1E-006 1E-005 0.0001 R1 R1 τJ τ1 τ1 R2 R2 τ2 R3 R3 τ3 τ2 Ci= τi/Ri Ci i/Ri τC τ τ3 Ri (°C/W) τi (sec) 0.2774 0.000908 0.3896 0.2540 0.003869 0.030195 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 7 www.irf.com © 2013 International Rectifier March 15, 2013 IRGP4063DPbF/IRGP4063D-EPbF L L DUT 0 VCC 80 V + - 1K DUT VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC -5V VCC DUT / DRIVER DUT VCC Rg RSH Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R= VCC ICM 100K D1 DUT C sense VCC G force Rg 22K DUT 0.0075μF E sense E force Fig.C.T.5 - Resistive Load Circuit 8 www.irf.com © 2013 International Rectifier Fig.C.T.6 - BVCES Filter Circuit March 15, 2013 140 700 140 600 120 600 120 500 100 500 400 80 400 60 90% ICE 200 40 tr TEST CURRENT 300 20 5% ICE 0 EOFF Loss -100 -0.40 0.10 0.60 200 40 100 0 -20 1.10 0 -100 6.20 6.40 600 600 500 500 40 QRR 30 VCE (V) 10 0 10% Peak IRR Peak IRR ICE VCE 400 tRR 20 IRR (A) 6.80 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 50 400 300 300 200 200 100 100 0 -30 -0.05 0.05 0.15 0.25 time (μS) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 9 6.60 -20 7.00 Time (μs) 60 -40 -0.15 20 EON Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 -20 5% V CE 10% test current Time(μs) -10 60 www.irf.com © 2013 International Rectifier ICE (A) 0 80 90% test 5% V CE 100 100 ICE (A) tf 300 VCE (V) 700 I CE (A) VCE (V) IRGP4063DPbF/IRGP4063D-EPbF 0 -100 -5.00 0.00 5.00 -100 10.00 time (μS) Fig. WF4 - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3 March 15, 2013 IRGP4063DPbF/IRGP4063D-EPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WITH AS SEMBLY LOT CODE 5657 ASS EMBLED ON WW 35, 2001 IN THE AS SEMBLY LINE "H" Note: "P" in as sembly line pos ition indicates "Lead-Free" INTERNAT IONAL RECT IFIER LOGO PART NUMBER IRFPE30 56 135H 57 ASS EMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2013 International Rectifier March 15, 2013 IRGP4063DPbF/IRGP4063D-EPbF TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D -E W IT H A S S E M B L Y L OT COD E 5657 AS S E M B L E D O N W W 35 , 2 00 0 IN T H E A S S E M B L Y L IN E "H " IN T E R N A T IO N A L R E C T IF IE R LOGO N o te : "P " in as s e m b ly lin e p o s itio n in d icate s "L e ad - F r ee " P AR T N U M B E R 56 03 5H 57 AS S E M B L Y L O T COD E D AT E CO D E YE AR 0 = 2 0 00 WE E K 35 L IN E H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd.., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 11 www.irf.com © 2013 International Rectifier March 15, 2013