IRLHS2242TR2PBF

IRLHS2242PbF HEXFET® Power MOSFET VDS -20 V VGS max ±12 V RDS(on) max 31 mΩ (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Qg typ ID (@Tc(Bottom) = 25°C) T OP VIEW 53 mΩ 9.6 nC -8.5 i D 1 D 6 D D D D 2 D 5 D D S G 3 G 4 S D S S 2mm x 2mm PQFN A Applications l l Charge and Discharge Switch for Battery Application System/load switch Features and Benefits Features Low Thermal Resistance to PCB (≤ 13°C/W) Low Profile (≤ 1.0mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification results in ⇒ Benefits Enable better thermal dissipation Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number Package Type IRLHS2242TRPbF PQFN 2mm x 2mm Standard Pack Form Quantity Tape and Reel 4000 IRLHS2242TR2PbF PQFN 2mm x 2mm Tape and Reel Note 400 EOL notice # 259 Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage -20 VGS ±12 ID @ TA = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 4.5V -5.8 -15 ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 4.5V -9.8 ID @ TC = 25°C IDM Continuous Drain Current, VGS @ 4.5V (Wirebond Limited) Pulsed Drain Current PD @TA = 25°C Power Dissipation c PD @TC(Bottom) = 25°C g Power Dissipation g TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range Units V -7.2 hi hi -8.5i A -34 2.1 g W 9.6 0.02 -55 to + 150 W/°C °C Notes  through ‡ are on page 9 1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 16, 2013 IRLHS2242PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ΔΒVDSS/ΔTJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient -20 ––– ––– 0.01 ––– ––– V VGS = 0V, ID = -250μA V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 25 43 31 53 mΩ VGS(th) ΔVGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current -0.4 ––– ––– -0.8 -3.8 ––– IGSS Gate-to-Source Forward Leakage ––– ––– ––– ––– Gate-to-Source Reverse Leakage Forward Transconductance ––– 10 ––– ––– -1.1 V VDS = VGS, ID = -10μA ––– mV/°C -1.0 VDS = -16V, VGS = 0V μA -150 VDS = -16V, VGS = 0V, TJ = 125°C -100 VGS = -12V nA 100 VGS = 12V ––– S VDS = -10V, ID = -8.5A Total Gate Charge ––– ––– ––– 12 9.6 1.6 ––– ––– ––– ––– ––– 3.7 4.3 ––– ––– Output Charge ––– ––– 4.8 6.8 ––– ––– RG td(on) tr Gate Resistance Turn-On Delay Time Rise Time ––– ––– ––– 17 7.9 54 ––– ––– ––– td(off) tf Turn-Off Delay Time Fall Time ––– ––– 54 66 ––– ––– Ciss Coss Input Capacitance Output Capacitance ––– ––– 877 273 ––– ––– Crss Reverse Transfer Capacitance ––– 182 ––– gfs Qg Qg Qgs Total Gate Charge Gate-to-Source Charge Qgd Qgodr Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Qsw Qoss nC nC VGS = -4.5V, ID = -8.5A VGS = -2.5V, ID = -6.8A e e VGS =-10V, VDS = -10V, ID = -8.5A VDS = -10V VGS = -4.5V ID = -8.5A nC VDS = 16V, VGS = 0V Ω ns pF VDD = -10V, VGS = -4.5V ID = -8.5A RG = 2.0Ω VGS = 0V VDS = -10V ƒ = 1.0KHz Avalanche Characteristics Parameter Single Pulse Avalanche Energy Avalanche Current EAS IAR c Typ. ––– ––– d Max. 18 -8.5 Units mJ A Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current Min. Typ. Max. Units Conditions MOSFET symbol h D ––– ––– -8.5 ––– -34 VSD (Body Diode) Diode Forward Voltage ––– ––– ––– -1.2 V p-n junction diode. TJ = 25°C, IS = -8.5A, VGS = 0V trr Qrr Reverse Recovery Time Reverse Recovery Charge ––– ––– 27 20 41 30 ns nC TJ = 25°C, IF = -8.5A, VDD = -10V di/dt = 200A/μs ton Forward Turn-On Time A c showing the integral reverse G S e e Time is dominated by parasitic Inductance Thermal Resistance RθJC (Bottom) RθJC (Top) RθJA RθJA (