IRLHS6276PbF
HEXFET® Power MOSFET
20
V
VGS
±12
V
RDS(on) max
45
mΩ
'
D1
D1
*
D2
6
A
'
d
'
3.4
G1
S1
2mm x 2mm Dual PQFN
7
)(
(@Tc(Bottom) = 25°C)
mΩ
'
ID
62
*
(@VGS = 2.5V)
S2
G2
D2
7
)(
RDS(on) max
6
(@VGS = 4.5V)
:
,(
9
3
2
7
VDS
Applications
• Charge and discharge switch for battery application
• Load/System Switch
Features and Benefits
Features
Low RDSon (≤ 45mΩ)
Low Thermal Resistance to PCB (≤ 19°C/W)
Low Profile (≤ 1.0mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Orderable part number
Package Type
IRLHS6276TRPBF
IRLHS6276TR2PBF
PQFN Dual 2mm x 2mm
PQFN Dual 2mm x 2mm
results in
⇒
Resulting Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice #259
Absolute Maximum Ratings
Parameter
Max.
VDS
Drain-to-Source Voltage
20
VGS
Gate-to-Source Voltage
±12
ID @ TA = 25°C
Continuous Drain Current, VGS @ 4.5V
4.5
ID @ TA = 70°C
Continuous Drain Current, VGS @ 4.5V
3.6
ID @ TC(Bottom) = 25°C
Continuous Drain Current, VGS @ 4.5V
ID @ TC(Bottom) = 100°C
Continuous Drain Current, VGS @ 4.5V
ID @ TC(Bottom) = 25°C
IDM
Continuous Drain Current, VGS @ 4.5V (Package Limited)
Pulsed Drain Current
PD @TA = 25°C
Power Dissipation
c
PD @TC(Bottom) = 25°C
f
Power Dissipation f
TJ
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
d
d
9.6d
6.1d
3.4d
V
A
40
1.5
6.6
f
Units
0.012
-55 to + 150
W
W/°C
°C
Notes through are on page 2
1
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
January 13, 2014
IRLHS6276PbF
Static @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Drain-to-Source Breakdown Voltage
Parameter
20
–––
–––
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
9.3
33
–––
45
Gate Threshold Voltage
–––
0.5
46
0.8
62
1.1
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
-3.8
–––
–––
–––
1.0
150
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
100
-100
gfs
Qg
Qgs
Forward Transconductance
8.8
–––
–––
3.1
–––
–––
S
VDS = 10V, ID = 3.4A
VDS = 10V
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
–––
–––
0.22
1.3
–––
–––
nC
Qgd
VGS = 4.5V
ID = 3.4A (See Fig.17 & 18)
–––
–––
–––
4.0
4.4
9.3
–––
–––
–––
Ω
Turn-Off Delay Time
Fall Time
–––
–––
10
4.9
–––
–––
Input Capacitance
Output Capacitance
–––
–––
310
79
–––
–––
Reverse Transfer Capacitance
–––
49
–––
Min.
Typ.
BVDSS
∆ΒVDSS/∆TJ
RDS(on)
VGS(th)
∆VGS(th)
IDSS
h
Total Gate Charge
Gate-to-Source Charge
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
h
h
Max. Units
V
Conditions
VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 3.4A
mΩ
VGS = 2.5V, ID = 3.4A
V
VDS = VGS, ID = 10µA
mV/°C
VDS = 16V, VGS = 0V
µA
VDS = 16V, VGS = 0V, TJ = 125°C
ed
ed
nA
ns
pF
VGS = 12V
VGS = -12V
d
d
VDD = 10V, VGS = 4.5V
ID = 3.4A
d
RG=1.8Ω
See Fig.15
VGS = 0V
VDS = 10V
ƒ = 1.0MHz
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
–––
c
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
VSD
trr
Qrr
Reverse Recovery Charge
Forward Turn-On Time
ton
–––
Max. Units
d
9.6
–––
–––
40
–––
–––
–––
5.2
1.2
7.8
Conditions
D
MOSFET symbol
A
showing the
integral reverse
V
ns
p-n junction diode.
TJ = 25°C, IS = 3.4A , VGS = 0V
TJ = 25°C, IF = 3.4A , VDD = 10V
di/dt = 126A/µs
–––
5.0
7.5
nC
Time is dominated by parasitic Inductance
G
e
d
d
S
e
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (
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