MMBT3906T

MMBT3906T — PNP Epitaxial Silicon Transistor February 2008 MMBT3906T PNP Epitaxial Silicon Transistor Features • General purpose amplifier transistor. • Ultra-Small Surface Mount Package for all types. • Suitable for general switching & amplification • Well suited for portable application • As complementary type, NPN MMBT3904T is recommended B Marking : A06 C E SOT-523F Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC TJ TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature Range Value -40 -40 -5 200 150 -55 ~ 150 Unit V V V mA °C °C * 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics* T =25°C unless otherwise noted a Symbol PC RθJA * Minimum land pad. Parameter Collector Power Dissipation, by RθJA Thermal Resistance, Junction to Ambient Max 250 500 Unit mW °C/W Electrical Characteristics* Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICEX hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Test Condition IC = -10μA, IE = 0 IC = -1mA, IB = 0 IE = -10μA, IC = 0 VCE = -30V, VEB(OFF) =-0.3V VCE = 1V, IC =- 0.1mA VCE = 1V, IC = -1mA VCE = 1V, IC = -10mA VCE = 1V, IC = -50mA VCE = 1V, IC = -100mA IC = -10mA, IB = -1mA IC = -50mA, IB = -5mA IC = -10mA, IB = -1mA IC = -50mA, IB = -5mA VCE = -20V, IC = -10mA, f = 100MHz VCB = -5V, IE = 0, f = 1MHz VEB = -0.5V, IC = 0, f = 1MHz VCC = -3V, IC = -10mA IB1 =- IB2 = -1mA Min. -40 40 -5 Max. Unit V V V -50 60 80 100 60 30 nA 300 VCE (sat) VBE (sat) fT Cob Cib td tr ts tf Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Input Capacitance Delay Time Rise Time Storage Time Fall Time -0.25 -0.4 -0.65 250 7.0 15 35 35 225 75 -0.85 -0.95 V V V V MHz pF pF ns ns ns ns * DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2% © 2007 Fairchild Semiconductor Corporation MMBT3906T Rev. 1.0.0 1 www.fairchildsemi.com MMBT3906T — PNP Epitaxial Silicon Transistor Typical Performance Characteristics Figure 1. DC Current Gain T J=125 C o T J=75 C o o Figure 2. Collector-Emitter Saturation Voltage 1000 Vce=1V Ic=10*Ib T J=25 C Current Gain 100 T J=-25 C o Collector-Emitter Voltage,[mV] T J=125 C T J=75 C o o 100 T J=25 C T J=-25 C o o 10 1 10 100 10 100 Collector Current, [mA] Collector Current, [mA] Figure 3. Base- Emitter Saturation Voltage Ic=10*Ib T J=25 C 1000 o Figure 4. Collector- Base Leakage Current 100 T J=-25 C o Base-Collector Leakage Current,[nA] Base- Emitter Voltage,[mV] T J=75 C T J=125 C o o T J=125 C 10 o T J=75 C T J=25 C 1 10 20 30 o o T J=-25 C 40 o 100 10 100 Collector Current, [mA] Base-Collector Revere Voltage, [V] Figure 5. Collector- Base Capacitance Base- Collector Juntion Capacitance, Cob[pF] 12 Figure 6. Power Derating 300 f=1mhz 250 Power Dissipation, [mW] 11 200 9 150 8 100 6 50 0 0 5 10 0 25 50 75 100 o 125 150 Base- Collector Reverse Voltage, V cb[V] Ambient Temperature, T a[ C] © 2007 Fairchild Semiconductor Corporation MMBT3906T Rev. 1.0.0 2 www.fairchildsemi.com MMBT3906T — PNP Epitaxial Silicon Transistor Package Dimensions SOT-523F • • • • Case : SOT-523F Case Material(Molded Plastic): KTMC1060SC UL Flammability classification rating : “V0” Moisture Sensitivity level per JESD22-A1113B : MSL 1 • Lead terminals solderable per MIL-STD7502026 /JESD22A121 • Lead Free Plating : Pure Tin(Matte) Dimensions in Millimeters © 2007 Fairchild Semiconductor Corporation MMBT3906T Rev. 1.0.0 3 www.fairchildsemi.com MMBT3906T MMBT3906T PNP Epitaxial Silicon Transistor TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® PDP-SPM™ Power220® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production © 2007 Fairchild Semiconductor Corporation MMBT3906T Rev. 1.0.0 4 www.fairchildsemi.com