MPSW3725

MPSW3725 MPSW3725 C TO-226 B E NPN Transistor This device is designed for high current, low impedance line driver applications. Sourced from Process 26. Absolute Maximum Ratings Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 60 6.0 1.2 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max MPSW3725 1.0 8.0 125 50 Units W mW/°C °C/W °C/W  1 999 Fairchild Semiconductor Corporation M PSW3725 NPN Transistor (continued) Electrical Characteristics Symbol Parameter TA= 25°C unless otherwise noted Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO Collector-Emitter Breakdown Voltage* Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current IC = 10 mA, IB = 0 IC = 10 µA, VBE = 0 IC = 100 µA, ICE = 0 IE = 10 µA, IC = 0 VCB = 50 V, IE = 0 VCB = 50 V, IE = 0, TA = 100°C 40 60 60 6.0 100 10 V V V V nA µA ON CHARACTERISTICS* hFE DC Current Gain IC = 10 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC=100mA,VCE=1.0V,TA=-55°C IC = 300 mA, VCE = 1.0 V IC = 500 mA, VCE = 1.0 V IC=500mA,VCE=1.0V,TA=-55°C IC = 800 mA, VCE = 2.0 V IC = 1.0 A, VCE = 5.0 V IC = 10 mA, IB = 1.0 mA IC = 100 mA, IB = 10 mA IC = 300 mA, IB = 30 mA IC = 500 mA, IB = 50 mA IC = 800 mA, IB = 80 mA IC = 1.0 A, IB = 100 mA IC = 10 mA, IB = 1.0 mA IC = 100 mA, IB = 10 mA IC = 300 mA, IB = 30 mA IC = 500 mA, IB = 50 mA IC = 800 mA, IB = 80 mA IC = 1.0 A, IB = 100 mA 30 60 30 40 35 20 20 25 180 VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage 0.25 0.26 0.4 0.52 0.8 0.95 0.76 0.86 1.1 1.2 1.5 1.7 V V V V V V V V V V V V SMALL SIGNAL CHARACTERISTICS fT Cobo Cibo Current Gain - Bandwidth Product Output Capacitance Input Capacitance IC = 50 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz VEB = 0.5 V, IC = 0, f = 1.0 MHz 250 25 100 MHz pF pF SWITCHING CHARACTERISTICS ton td tr toff ts tf Turn-on Time Delay Time Rise Time Turn-off Time Storage Time Fall Time VCC = 30 V, IC = 500mA IB1 = IB2 = 50 mA VCC = 30 V, VBE = 3.8 V, IC = 500 mA, IB1 = 50 mA 22 10 12 250 235 15 ns ns ns ns ns ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0% MPSW3725 NPN Transistor (continued) Typical Characteristics 200 VCESAT- COLLE CTOR-EMITTER VOLTAGE (V) h FE - TYP ICAL PULSED CURRE NT GAIN Typical Pulsed Current Gain vs Collector Current VCE = 1.0V 125 °C Collector-Emitter Saturation Voltage vs Collector Current 0.4 β = 10 150 0.3 125 °C 100 25 °C - 40 °C 0.2 25 °C 50 0.1 - 40 °C 0 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 0 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 1.2 1 V BE(O N)- BASE-EMITTER ON VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current V BESAT- BASE- EMITTER VOLTAGE( V) β = 10 - 40 °C Base-Emitter ON Voltage vs Collector Current V CE = 1.0V 0.8 - 40 °C 0.8 0.6 0.4 0.2 0 25 °C 125 °C 0.6 25 °C 0.4 125 °C 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 25 Collector-Cutoff Current vs Ambient Temperature I CBO - COLLECTOR CURRENT (nA) 100 150 100 Input / Output Capacitance vs Reverse Bias 100 V CB = 40V CAPACITANCE (pF) 10 F = 1 MHz C ibo 50 50 10 25 1 5 C o bo 0.1 25 50 75 100 125 T A - AM BIENT TE MPE RATURE (° C) 150 1 0.1 1 10 REVERSE BIAS VOLTAGE (V) 50 M PSW3725 NPN Transistor (continued) Typical Characteristics (continued) Contours of Constant Bandwidth Product (f T) V CE - COLLECTOR VOLTAGE (V) 10 450 MHz Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) 0.75 TO-226 400 MHz 1 350 MHz 250 MHz 100 MHz 0.5 0.25 0.1 10 50 100 500 I C - COLLECTOR CURRENT (mA) 1000 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 MPSW3725 NPN Transistor (continued) Typical Characteristics (continued) I B2- TURN OFF BASE CURRENT (mA) I B2 - TURN OFF BASE CURRENT (mA) Storage Time vs. Turn On and Turn Off Base Currents 300 t s = 20 ns Storage Time vs. Turn On and Turn Off Base Currents 200 I C = 500 mA VCC = 30V t s = 20 ns 25 ns 150 200 35 ns 100 40 ns 50 ns 45 ns 100 I C = 800 mA VCC = 30V 0 0 100 200 I B1 - TURN ON BASE CURRENT (mA) 300 50 0 0 50 100 150 I B1 - TURN ON BASE CURRENT (mA) 200 I B2- TURN OFF BASE CURRENT (mA) Storage Time vs. Turn On and Turn Off Base Currents 50 40 t s = 20 ns Rise Time vs. Collector and Turn On Base Currents I B1 - TURN ON BASE CURRENT (mA) 100 t r = 3 ns 50 40 30 5 ns 30 40 ns 20 10 0 60 ns 80 ns 8 ns 20 15 ns I C = 100 mA VCC = 30V 0 10 20 30 40 IB1 - TURN ON BASE CURRENT (mA) 50 VCC = 30V 400 500 10 50 100 200 300 I C - COLLECTOR CURRENT (mA) M PSW3725 NPN Transistor (continued) Typical Characteristics (continued) I B2- TURN OFF BASE CURRENT (mA) 200 t f = 5 ns 6 ns I B2 - TURN OFF BASE CURRENT (mA) Fall Time vs. Turn On and Turn Off Base Currents Fall Time vs. Turn On and Turn Off Base Currents 300 I C = 800 mA VCC = 30V t f = 10 ns 15 ns 150 7 ns 200 100 10 ns 100 20 ns 50 I C = 500 mA VCC = 30V 0 50 100 150 I B1 - TURN ON BASE CURRENT (mA) 200 0 0 0 100 200 I B1 - TURN ON BASE CURRENT (mA) 300 TURN OFF BASE CURRENT (mA) Fall Time vs. Turn On and Turn Off Base Currents 50 40 30 20 30 ns I C = 100 mA VCC = 30V t f = 12 ns 15 ns 10 0 B2- 0 10 20 30 40 I B1 - TURN ON BASE CURRENT (mA) 50 I MPSW3725 NPN Transistor (continued) Test Circuit - 3.8 V 30 V VIN = 9.7 V tr and tf ≤ 1 ns PW = 1.0 µs ZIN = 50 Ω Duty Cycle < 2% 10 µF VIN 1.0 KΩ 15 Ω VOUT 1.0 µF 43 Ω 100 Ω 62 Ω To sampling scope tr < 1.0 ns ZIN ≥ 100 KΩ FIGURE 1: Switching Time Test Circuit (IC = 500 mA, IB1 = 50 mA, IB2 = 50 mA) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  DISCLAIMER FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G