找到“GR3J”相关的规格书共2,250个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| NAND08GR3B2CN1E | NUMONYX[NumonyxB.V] | NAND08GR3B2CN1E - 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - Numonyx B.V | 获取价格 | ||
| NAND04GR4B4CZL6E | NUMONYX[NumonyxB.V] | NAND04GR4B4CZL6E - 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - Numonyx B.V | 获取价格 | ||
| NAND04GR4B2DN1F | NUMONYX[NumonyxB.V] | NAND04GR4B2DN1F - 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - Numonyx B.V | 获取价格 | ||
| NAND04GR4B2CZL1E | NUMONYX[NumonyxB.V] | NAND04GR4B2CZL1E - 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - Numonyx B.V | 获取价格 | ||
| NAND04GR3B2DN1E | NUMONYX[NumonyxB.V] | NAND04GR3B2DN1E - 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - Numonyx B.V | 获取价格 | ||
| NAND04GR3B2CZL1E | NUMONYX[NumonyxB.V] | NAND04GR3B2CZL1E - 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - Numonyx B.V | 获取价格 | ||
| NAND02GR4B2BZB1 | STMICROELECTRONICS[STMicroelectronics] | NAND02GR4B2BZB1 - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND02GR4B2AZB1 | STMICROELECTRONICS[STMicroelectronics] | NAND02GR4B2AZB1 - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND02GR3B2CZA1 | STMICROELECTRONICS[STMicroelectronics] | NAND02GR3B2CZA1 - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND01GR4B2CN6 | STMICROELECTRONICS[STMicroelectronics] | NAND01GR4B2CN6 - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND01GR3B2CZA6F | STMICROELECTRONICS[STMicroelectronics] | NAND01GR3B2CZA6F - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND01GR3B2CN1E | STMICROELECTRONICS[STMicroelectronics] | NAND01GR3B2CN1E - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND01GR3B2BZA1E | STMICROELECTRONICS[STMicroelectronics] | NAND01GR3B2BZA1E - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND01GR3B2BN6E | STMICROELECTRONICS[STMicroelectronics] | NAND01GR3B2BN6E - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| SMS46GR07 | SUMMIT[SummitMicroelectronics,Inc.] | SMS46GR07 - Quad Programmable Precision Supervisory Controller With Independent Resets and 4k-Bit Nonvolatile Memory - Summit Microelectronics, Inc. | 获取价格 | ||
| SMS46GR00 | SUMMIT[SummitMicroelectronics,Inc.] | SMS46GR00 - Quad Programmable Precision Supervisory Controller With Independent Resets and 4k-Bit Nonvolatile Memory - Summit Microelectronics, Inc. | 获取价格 | ||
| SMS45GR06 | SUMMIT[SummitMicroelectronics,Inc.] | SMS45GR06 - Quad Programmable Precision Cascade Sequencer and Supervisory Controller with 4k-Bit Nonvolatile Memory - Summit Microelectronics, Inc. | 获取价格 | ||
| SMS45GR01 | SUMMIT[SummitMicroelectronics,Inc.] | SMS45GR01 - Quad Programmable Precision Cascade Sequencer and Supervisory Controller with 4k-Bit Nonvolatile Memory - Summit Microelectronics, Inc. | 获取价格 | ||
| 117GR300C5A0A1 | CTS[CTSCorporation] | 117GR300C5A0A1 - Commercial 3/4inch (19mm) Diameter, 2 watt Wirewound Variable Resistor - CTS Corporation | 获取价格 | ||
| 117GR300C102B1 | CTS[CTSCorporation] | 117GR300C102B1 - Commercial 3/4inch (19mm) Diameter, 2 watt Wirewound Variable Resistor - CTS Corporation | 获取价格 |
