找到“GR3J”相关的规格书共2,250个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| LDR-FC-31Z-M-T-ASFCNL-GR | SOURCE[SourcePhotonics,Inc.] | LDR-FC-31Z-M-T-ASFCNL-GR - 1310nm & 1550nm Laser Diode Module - Source Photonics, Inc. | 获取价格 | ||
| LDR-FC-31Z-M-T-ASFCNE-GR | SOURCE[SourcePhotonics,Inc.] | LDR-FC-31Z-M-T-ASFCNE-GR - 1310nm & 1550nm Laser Diode Module - Source Photonics, Inc. | 获取价格 | ||
| LDR-FC-31Z-H-T-DSSTNB-GR | SOURCE[SourcePhotonics,Inc.] | LDR-FC-31Z-H-T-DSSTNB-GR - 1310nm & 1550nm Laser Diode Module - Source Photonics, Inc. | 获取价格 | ||
| LDR-FC-31Z-H-T-DSFCNL-GR | SOURCE[SourcePhotonics,Inc.] | LDR-FC-31Z-H-T-DSFCNL-GR - 1310nm & 1550nm Laser Diode Module - Source Photonics, Inc. | 获取价格 | ||
| LDR-FC-31Z-H-T-ASSTNB-GR | SOURCE[SourcePhotonics,Inc.] | LDR-FC-31Z-H-T-ASSTNB-GR - 1310nm & 1550nm Laser Diode Module - Source Photonics, Inc. | 获取价格 | ||
| NE55410GR | NEC[NEC] | NE55410GR - N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER - NEC | 获取价格 | ||
| NAND08GR4B4CZL1E | NUMONYX[NumonyxB.V] | NAND08GR4B4CZL1E - 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - Numonyx B.V | 获取价格 | ||
| NAND08GR4B2CZL6F | NUMONYX[NumonyxB.V] | NAND08GR4B2CZL6F - 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - Numonyx B.V | 获取价格 | ||
| NAND08GR3B2CZL1F | NUMONYX[NumonyxB.V] | NAND08GR3B2CZL1F - 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - Numonyx B.V | 获取价格 | ||
| NAND04GR4B4CN6E | NUMONYX[NumonyxB.V] | NAND04GR4B4CN6E - 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - Numonyx B.V | 获取价格 | ||
| NAND04GR4B2D | NUMONYX[NumonyxB.V] | NAND04GR4B2D - 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - Numonyx B.V | 获取价格 | ||
| NAND04GR4B2CN6E | NUMONYX[NumonyxB.V] | NAND04GR4B2CN6E - 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - Numonyx B.V | 获取价格 | ||
| NAND04GR3B4CZL6F | NUMONYX[NumonyxB.V] | NAND04GR3B4CZL6F - 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - Numonyx B.V | 获取价格 | ||
| NAND04GR3B2DN1F | NUMONYX[NumonyxB.V] | NAND04GR3B2DN1F - 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - Numonyx B.V | 获取价格 | ||
| NAND04GR3B2CZL1F | NUMONYX[NumonyxB.V] | NAND04GR3B2CZL1F - 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - Numonyx B.V | 获取价格 | ||
| NAND04GR3B2CN1F | NUMONYX[NumonyxB.V] | NAND04GR3B2CN1F - 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - Numonyx B.V | 获取价格 | ||
| NAND02GR4B2CZA1F | STMICROELECTRONICS[STMicroelectronics] | NAND02GR4B2CZA1F - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND02GR4B2CN6F | STMICROELECTRONICS[STMicroelectronics] | NAND02GR4B2CN6F - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND02GR4B2BZA1E | STMICROELECTRONICS[STMicroelectronics] | NAND02GR4B2BZA1E - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND02GR3B2CN6 | STMICROELECTRONICS[STMicroelectronics] | NAND02GR3B2CN6 - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 |
