CLA80MT1200NHB

CLA80MT1200NHB High Efficiency Thyristor VRRM = 1200 V I TAV = 40 A VT = 1,26 V Three Quadrants operation: QI - QIII 1~ Triac Part number CLA80MT1200NHB Backside: Terminal 2 Three Quadrants Operation T2 Positive Half Cycle + (-) IGT T2 (+) IGT T1 REF IGT - 2 T2 T1 QII QI QIII QIV REF + IGT (-) IGT 3 1 T1 REF Negative Half Cycle Note: All Polarities are referenced to T1 Features / Advantages: Applications: Package: TO-247 ● Triac for line frequency ● Three Quadrants Operation - QI - QIII ● Planar passivated chip ● Long-term stability of blocking currents and voltages ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20150827c CLA80MT1200NHB Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1200 I R/D reverse current, drain current VT forward voltage drop TVJ = 25°C 10 µA 2 mA TVJ = 25°C 1,30 V 1,59 V 1,26 V IT = 40 A IT = 80 A IT = 40 A IT = 80 A I RMS RMS forward current per phase 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 °C for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 125°C TC = 120 °C RthCH max. Unit 1300 V VR/D = 1200 V average forward current Ptot typ. VR/D = 1200 V I TAV I²t min. 1,64 V T VJ = 150 °C 40 A 88 A TVJ = 150 °C 0,88 V 10 mΩ 0,4 K/W K/W 0,25 TC = 25°C 310 W t = 10 ms; (50 Hz), sine TVJ = 45°C 520 A t = 8,3 ms; (60 Hz), sine VR = 0 V 560 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 440 A t = 8,3 ms; (60 Hz), sine VR = 0 V 475 A t = 10 ms; (50 Hz), sine TVJ = 45°C 1,35 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 1,31 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 970 A²s 940 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 25 t P = 300 µs PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = 120 A t P = 200 µs; di G /dt = 0,3 A/µs; (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage I GT gate trigger current VGD gate non-trigger voltage I GD gate non-trigger current IL latching current IG = 0,3 A; V = ⅔ VDRM non-repet., I T = pF 10 W 5 W 0,5 W 150 A/µs 40 A 500 A/µs TVJ = 150°C 500 V/µs VD = 6 V TVJ = 25 °C 1,7 TVJ = -40 °C 1,9 V VD = 6 V TVJ = 25 °C ± 70 mA TVJ = -40 °C ± 90 mA TVJ = 150°C 0,2 V ±1 mA TVJ = 25 °C 100 mA R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs IG = 0,3 A; di G /dt = V 0,3 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 70 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0,3 A; di G /dt = 0,3 A/µs VR = 100 V; I T = 40 A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20150827c CLA80MT1200NHB Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 70 Unit A -40 150 °C -40 125 °C 150 °C 6 Weight MD mounting torque FC mounting force with clip Product Marking C L A 80 MT 1200 N HB XXXXXXXXX Assembly Line 0,8 1,2 Nm 20 120 N Part description IXYS Logo Part No. g = = = = = = = = Thyristor (SCR) High Efficiency Thyristor (up to 1200V) Current Rating [A] 1~ Triac Reverse Voltage [V] Three Quadrants operation: QI - QIII TO-247AD (3) Zyyww abcd Assembly Code Date Code Ordering Standard Ordering Number CLA80MT1200NHB Similar Part CLA80MT1200NHR Equivalent Circuits for Simulation I V0 R0 Marking on Product CLA80MT1200NHB Package ISO247 (3) * on die level Delivery Mode Tube Code No. 517024 Voltage class 1200 T VJ = 150 °C Thyristor V 0 max threshold voltage 0,88 V R0 max slope resistance * 7,5 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20150827c CLA80MT1200NHB Outlines TO-247 A E A2 Ø P1 ØP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 3x b b4 C A1 2x e Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 2 3 1 IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20150827c CLA80MT1200NHB Thyristor 80 500 10000 VR = 0 V 50 Hz, 80% VRRM 60 400 IT ITSM 2 It 40 1000 [A] [A] [A s] TVJ = 45°C 300 TVJ = 45°C 2 TVJ = 125°C 20 TVJ = 125°C TVJ = 150°C TVJ = 125°C TVJ = 25°C 0 0,0 0,5 1,0 200 1,5 100 2,0 0,01 0,1 VT [V] 1 1 t [s] Fig. 3 I t versus time (1-10 s) 80 1: IGD, TVJ = 150°C 1 56 1 4 60 TVJ = 125°C 100 23 tgd IT(AV)M [µs] [A] 10 lim. 1000 10000 10 typ. 1 10 0,1 100 30 20 5: PGM = 5 W 6: PGM = 10 W 10 50 40 4: PGAV = 0.5 W 1 dc = 1 0.5 0.4 0.33 0.17 0.08 70 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C [V] 4 5 6 7 8 910 t [ms] 1000 10 3 2 Fig. 2 Surge overload current ITSM: crest value, t: duration Fig. 1 Forward characteristics VG 2 0 100 1000 0 40 IG [mA] IG [mA] Fig. 4 Gate voltage & gate current Fig. 5 Gate controlled delay time tgd 80 80 120 160 Tcase [°C] Fig. 6 Max. forward current at case temperature 0,5 RthHA 0.4 0.6 0.8 1.0 2.0 4.0 dc = 1 0.5 0.4 0.33 0.17 0.08 60 P(AV) 0,4 0,3 ZthJC 40 i Rthi (K/W) 1 0.060 2 0.040 3 0.155 4 0.055 5 0.090 0,2 [W] [K/W] 20 0,1 0 ti (s) 0.0100 0.0001 0.0200 0.2000 0.1100 0,0 0 10 20 30 40 50 IT(AV) [A] 0 50 100 150 Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Tamb [°C] Fig. 7 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20150827c