IXFR15N100Q3

IXFR15N100Q3 Q3-Class HiperFETTM Power MOSFET VDSS ID25 RDS(on) trr D (Electrically Isolated Tab) = =   1000V 10A 1.2 250ns G N-Channel Enhancement Mode Fast Intrinsic Rectifier S ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 10 A IDM TC = 25C, Pulse Width Limited by TJM 45 A IA EAS TC = 25C TC = 25C 7.5 1.0 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 50 V/ns PD TC = 25C 400 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force G 20..120/4.5..27 N/lb. 5 g Weight Isolated Tab S G = Gate S = Source D = Drain Features      2500 V D   Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface Low Intrinsic Gate Resistance 2500V~ Electrical Isolation Fast Intrinsic Rectifier Avalanche Rated Low Package Inductance Advantages    Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 1000 VGS(th) VDS = VGS, ID = 4mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) V 6.5 V 100 nA TJ = 125C VGS = 10V, ID = 7.5A, Note 1 © 2020 IXYS CORPORATION, All Rights Reserved 25 A 1.5 mA 1.2 High Power Density Easy to Mount Space Savings Applications      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls  DS100354A(1/20) IXFR15N100Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 7.5 VDS = 20V, ID = 7.5A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf S 3250 pF 265 pF 24 pF 0.20   28 VGS = 10V, VDS = 0.5 • VDSS, ID = 7.5A RG = 2 (External) Qg(on) Qgs 12.5 VGS = 10V, VDS = 0.5 • VDSS, ID = 7.5A Qgd ns 10 ns 30 ns 8 ns 64 nC 23 nC 27 nC 0.31 C/W RthJC RthCS C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 15 A ISM Repetitive, Pulse Width Limited by TJM 60 A VSD IF = IS, VGS = 0V, Note 1 1.4 V 250 ns trr IRM QRM Note IF = 7.5A, -di/dt = 100A/s VR = 100V, VGS = 0V 7.6 A 660 nC 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR15N100Q3 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 24 14 VGS = 10V 9V V GS = 10V 20 12 16 8V I D - Amperes I D - Amperes 10 8 6 12 8V 8 4 7V 4 2 7V 6V 0 0 0 2 4 6 8 10 12 14 16 0 10 15 20 25 30 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125oC Fig. 4. RDS(on) Normalized to ID = 7.5A Value vs. Junction Temperature 14 3.0 VGS = 10V VGS = 10V 12 2.6 10 2.2 RDS(on) - Normalized I D - Amperes 5 VDS - Volts 7V 8 6 4 I D = 15A 1.8 I D = 7.5A 1.4 1.0 6V 2 0.6 5V 0 0.2 0 3 2.6 6 9 12 15 18 21 24 27 30 33 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 7.5A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 12 VGS = 10V 2.4 o 10 TJ = 125 C 8 2.0 I D - Amperes RDS(on) - Normalized 2.2 1.8 1.6 o TJ = 25 C 1.4 6 4 1.2 2 1.0 0.8 0 0 2 4 6 8 10 12 14 I D - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 16 18 20 22 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFR15N100Q3 Fig. 8. Transconductance Fig. 7. Input Admittance 25 18 o VDS = 20V 16 20 14 g f s - Siemens 12 I D - Amperes TJ = - 40 C VDS = 20V 10 o 8 TJ = 125 C o 25 C o - 40 C 6 o 25 C 15 o 125 C 10 4 5 2 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 2 4 6 8 VGS - Volts 10 12 14 16 18 20 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 16 50 45 VDS = 500V 14 I D = 7.5A 40 I G = 10mA 12 10 V GS - Volts I S - Amperes 35 30 25 20 8 6 o 15 TJ = 125 C 4 10 o TJ = 25 C 2 5 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 10 20 VSD - Volts 30 40 50 60 70 80 90 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100 10000 1ms 100µs 25µs 1000 10 I D - Amperes Capacitance - PicoFarads RDS(on) Limit Ciss Coss 100 1 o TJ = 150 C Crss o TC = 25 C Single Pulse f = 1 MHz 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFR15N100Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: F_15N100Q3(Q6) 6-28-11 IXFR15N100Q3 ISOPLUS247 (IXFR) Outline 1 = Gate 2,4 = Drain 3 = Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFR15N100Q3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 IXYS CORPORATION, All Rights Reserved