IXTA120N04T2

IXTA120N04T2 IXTP120N04T2 TrenchT2TM Power MOSFET VDSS ID25 = =  RDS(on) N-Channel Enhancement Mode Avalanche Rated 40V 120A  6.1m TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 40 V VDGR TJ = 25C to 175C, RGS = 1M 40 V VGSM Transient 20 V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 120 360 A A IA TC = 25C 50 A EAS TC = 25C 400 mJ PD TC = 25C 200 W -55 ... +175  C TJM 175  C Tstg -55 ... +175  C TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C FC Md Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in Weight TO-263 TO-220 2.5 3.0 g g G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features International Standard Packages Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier 175°C Operating Temperature High Current Handling Capability ROHS Compliant High Performance Trench Technology for extremely low RDS(on)        Advantages High Power Density Easy to Mount Space Savings  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 40 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150C RDS(on) VGS = 10V, ID = 25A, Notes 1 & 2   V 4.0 V            100 nA 2 A Applications Automotive Engine Control Synchronous Buck Converter (for Notebook SystemPower & General Purpose Point & Load)  DC/DC Converters  High Current Switching Applications  Power Train Management  Distributed Power Architecture   50 A 6.1 m  © 2018 IXYS CORPORATION, All Rights Reserved DS99973B(7/18) IXTA120N04T2 IXTP120N04T2 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 28 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 20V, ID = 60A RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS Qgd E 47 S 3240 pF 557 pF 140 pF 14 ns 8 ns 16 ns 11 ns 58 nC 17 nC 10 nC C2 A E1 L1 D1 D 1 2 L2 3 A1 b b2 4 H L3 e c 0.43 [11.0] e 0 0.34 [8.7] 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 0.20 [5.0] 60.12 [3.0] 0.10 [2.5] 0.06 [1.6] 0.75 C/W RthJC RthCS TO-263 Outline TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 120 A ISM Repetitive, Pulse Width Limited by TJM 480 A VSD trr IRM QRM IF = 60A, VGS = 0V, Note 1 1.2 IF = 60A, VGS = 0V, -di/dt = 100A/s, VR = 20V TO-220 Outline E A oP A1 V 35 ns 1.6 A 28 nC H1 Q D2 D D1 E1 A2 EJECTOR PIN L1 L ee Notes: 1. Pulse test, t  300s; duty cycle, d  2%. 3X b c e1 e1 3X b2 1 - Gate 2,4 - Drain 3 - Source 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTA120N04T2 IXTP120N04T2 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 120 350 VGS = 15V 10V 9V 8V 100 VGS = 15V 9V 250 80 7V I D - Amperes I D - Amperes 10V 300 60 6V 40 8V 200 150 7V 100 20 5V 6V 50 5V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.8 1 2 3 120 6 7 8 2.0 VGS = 15V 10V 9V 8V VGS = 10V RDS(on) - Normalized 1.8 80 I D - Amperes 5 Fig. 4. RDS(on) Normalized to ID = 60A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 100 4 VDS - Volts VDS - Volts 7V 60 6V 40 5V 20 I D = 120A 1.6 I D = 60A 1.4 1.2 1.0 0.8 0 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 60A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 2.4 120 VGS = 10V 15V 2.2 o TJ = 175 C 100 1.8 I D - Amperes RDS(on) - Normalized 2.0 1.6 1.4 1.2 80 60 40 1.0 0.8 20 o TJ = 25 C 0 0.6 0 40 80 120 160 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 200 240 280 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA120N04T2 IXTP120N04T2 Fig. 7. Input Admittance Fig. 8. Transconductance 100 70 o 90 TJ = - 40 C 60 80 50 g f s - Siemens I D - Amperes 70 60 50 40 o TJ = 150 C 30 o o 25 C 40 o 150 C 30 20 25 C o - 40 C 20 10 10 0 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 10 20 30 40 10 270 9 240 8 210 7 180 6 VGS - Volts I S - Amperes 60 70 80 90 100 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 300 150 120 90 50 I D - Amperes VGS - Volts VDS = 20V I D = 60A I G = 10mA 5 4 3 o TJ = 150 C 60 2 o TJ = 25 C 30 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 1.5 10 20 30 40 50 60 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 1000 f = 1 MHz RDS(on) Limit I D - Amperes Capacitance - PicoFarads C iss 1,000 C oss 25μs 100 100μs 1ms 10 o TJ = 175 C o TC = 25 C Single Pulse C rss DC 10ms 100ms 1 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 VDS - Volts 100 IXTA120N04T2 IXTP120N04T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 11 11 RG = 5Ω, VGS = 10V 10 9 VDS = 20V 9 t r - Nanoseconds 8 t r - Nanoseconds RG = 5Ω, VGS = 10V 10 VDS = 20V 7 I D = 60A 6 5 I D = 120A 4 o TJ = 25 C 8 7 6 5 o TJ = 125 C 4 3 3 2 2 1 25 35 45 55 65 75 85 95 105 115 20 125 30 40 50 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 18 VDS = 20V 16 15 I D = 60A, 120A 14 6 13 4 12 2 11 0 8 10 12 14 16 18 td(off) RG = 5Ω, VGS = 10V 15 13 11 12 7 25 20 35 45 55 VDS = 20V 28 90 26 80 16 20 14 18 o o TJ = 125 C, 25 C 16 10 8 60 105 115 8 125 70 80 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 90 tf td(off) 80 TJ = 125 C, VGS = 10V 70 VDS = 20V 60 60 50 50 40 40 I D = 60A 30 30 20 14 10 12 100 0 20 I D = 120A 10 0 4 6 8 10 12 RG - Ohms 14 16 18 20 t d(off) - Nanoseconds 22 50 95 90 70 24 18 40 85 o t d(off) - Nanoseconds t f - Nanoseconds td(off) RG = 5Ω, VGS = 10V 30 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance t f - Nanoseconds tf 20 65 TJ - Degrees Centigrade 24 12 16 I D = 120A Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 20 20 I D = 60A RG - Ohms 22 24 VDS = 20V 9 10 6 100 t d(off) - Nanoseconds 10 4 90 28 tf 17 o TJ = 125 C, VGS = 10V 8 80 17 t d(on) - Nanoseconds t r - Nanoseconds td(on) t f - Nanoseconds tr 12 70 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 16 14 60 I D - Amperes IXTA120N04T2 IXTP120N04T2 Fig. 19. Maximum Transient Thermal Impedance Z(th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_120N04T2 (V3) 7-9-18-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.