Preliminary Technical Information
IXTN550N055T2
TrenchT2TM GigaMOSTM
Power MOSFET
VDSS
ID25
=
=
55V
550A
Ω
1.30mΩ
RDS(on) ≤
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
miniBLOC, SOT-227
E153432
S
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 175°C
55
V
VDGR
TJ = 25°C to 175°C, RGS = 1MΩ
55
V
VGSS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
TC = 25°C (Chip Capability)
IL(RMS)
IDM
External Lead Current Limit
TC = 25°C, Pulse Width Limited by TJM
IA
EAS
PD
S
D
550
A
200
1650
A
A
TC = 25°C
TC = 25°C
200
3
A
J
TC = 25°C
940
W
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
-55 ... +175
175
-55 ... +175
°C
°C
°C
Features
300
260
°C
°C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30
g
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
VISOL
50/60 Hz, RMS
IISOL ≤ 1mA
Md
G
t = 1 minute
t = 1 second
Mounting Torque
Terminal Connection Torque
Weight
G = Gate
S = Source
z
z
z
z
z
z
z
z
D = Drain
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
175°C Operating Temperature
Isolation Voltage 2500 V~
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low RDS(on)
Advantages
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
z
Characteristic Values
Min.
Typ.
Max.
z
z
BVDSS
VGS = 0V, ID = 250μA
55
VGS(th)
VDS = VGS, ID = 250μA
2.0
IGSS
VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)
VGS = 10V, ID = 100A, Note 1
V
TJ = 150°C
© 2009 IXYS CORPORATION, All Rights Reserved
1.10
Applications
4.0
V
±200
nA
z
10 μA
1 mA
z
1.30 mΩ
Easy to Mount
Space Savings
High Power Density
z
DC-DC Converters and Off-Line UPS
Primary-Side Switch
High Speed Power Switching
Applications
DS100173A(12/09)
IXTN550N055T2
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
90
VDS = 10V, ID = 60A, Note 1
150
S
40
nF
4970
pF
1020
pF
1.36
Ω
45
ns
40
ns
90
ns
230
ns
595
nC
150
nC
163
nC
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
RGI
td(on)
tr
td(off)
tf
Gate Input Resistance
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 200A
RG = 1Ω (External)
Qg(on)
Qgs
SOT-227B (IXTN) Outline
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS
Qgd
(M4 screws (4x) supplied)
0.16 °C/W
RthJC
RthCS
0.05
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min. Typ.
Max.
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = 100A, VGS = 0V, Note 1
trr
IRM
IF = 100A, VGS = 0V
QRM
-di/dt = 100A/μs
VR = 27.5V
550
A
1700
A
1.2
V
100
5
ns
A
250
nC
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTN550N055T2
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
350
400
VGS = 15V
10V
8V
250
ID - Amperes
VGS = 15V
350
200
150
7V
300
6V
250
ID - Amperes
300
5V
10V
8V
7V
6V
200
150
5V
100
100
50
50
4V
4V
0
0
0.0
0.1
0.2
0.3
0.4
0.5
0.0
0.5
1.0
VDS - Volts
2.0
2.5
Fig. 4. Normalized RDS(on) vs. Junction Temperature
Fig. 3. Output Characteristics @ T J = 150ºC
2.0
350
VGS = 15V
10V
8V
7V
300
VGS = 10V
1.8
R DS(on) - Normalized
250
ID - Amperes
1.5
VDS - Volts
6V
200
150
5V
100
4V
50
I D < 550A
1.6
1.4
1.2
1.0
0.8
0.6
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
-50
1.0
-25
0
VDS - Volts
25
50
75
100
125
150
175
TJ - Degrees Centigrade
Fig. 5. Normalized RDS(on) vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
2.0
220
200
1.8
TJ = 175ºC
160
1.6
ID - Amperes
R DS(on) - Normalized
External Lead Current Limit
180
VGS = 10V
15V
1.4
1.2
140
120
100
80
60
TJ = 25ºC
40
1.0
20
0.8
0
0
50
100
150
200
250
ID - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
300
350
400
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
175
IXTN550N055T2
Fig. 8. Transconductance
Fig. 7. Input Admittance
300
300
TJ = - 40ºC
250
250
ID - Amperes
200
g f s - Siemens
TJ = 150ºC
25ºC
- 40ºC
150
100
25ºC
200
150ºC
150
100
50
50
0
0
2.5
3.0
3.5
4.0
4.5
5.0
0
5.5
50
100
150
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
250
300
500
600
Fig. 10. Gate Charge
10
350
VDS = 27.5V
9
I D = 275A
300
8
250
I G = 10mA
7
VGS - Volts
IS - Amperes
200
ID - Amperes
200
150
TJ = 150ºC
100
6
5
4
3
2
TJ = 25ºC
50
1
0
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
100
200
VSD - Volts
300
400
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
10,000
100.0
1,000
25µs
10.0
ID - Amperes
Capacitance - NanoFarads
RDS(on) Limit
Ciss
Coss
100µs
External Lead Limit
100
1ms
1.0
Crss
10
10ms
TJ = 175ºC
TC = 25ºC
f = 1 MHz
DC
100ms
Single Pulse
0.1
1
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.1
1
10
VDS - Volts
100
IXTN550N055T2
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
48
48
RG = 1Ω , VGS = 10V
46
44
VDS = 27.5V
44
t r - Nanoseconds
t r - Nanoseconds
RG = 1Ω , VGS = 10V
46
VDS = 27.5V
42
I
40
D
= 200A
38
36
I
D
TJ = 125ºC
42
40
38
TJ = 25ºC
36
= 100A
34
34
32
32
25
35
45
55
65
75
85
95
105
115
40
125
60
80
100
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
105
300
75
I D = 200A
200
60
I D = 100A
45
100
30
50
15
1.5
2
2.5
3
3.5
4
4.5
tf
td(off) - - - -
130
200
120
I D = 200A
150
110
I D = 100A
100
100
50
90
0
25
5
35
45
55
65
75
85
95
105
115
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
td(off) - - - -
400
200
120
TJ = 25ºC
150
100
100
80
TJ = 125ºC
50
80
100
td(off) - - - -
VDS = 27.5V
400
I D = 200A, 100A
300
300
200
200
100
100
60
0
60
t d(off) - Nanoseconds
140
TJ = 125ºC
tf
TJ = 125ºC, VGS = 10V
120
140
160
ID - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
180
40
200
0
0
1
1.5
2
2.5
3
RG - Ohms
3.5
4
4.5
5
t d(off) - Nanoseconds
VDS = 27.5V
250
500
160
t f - Nanoseconds
tf
80
125
500
180
RG = 1Ω, VGS = 10V
140
RG = 1Ω, VGS = 10V
TJ - Degrees Centigrade
350
40
150
RG - Ohms
300
200
250
0
1
180
VDS = 27.5V
t d(on) - Nanoseconds
250
0
t f - Nanoseconds
350
90
150
160
t d(off) - Nanoseconds
VDS = 27.5V
300
t r - Nanoseconds
td(on) - - - -
TJ = 125ºC, VGS = 10V
120
t f - Nanoseconds
tr
140
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
400
350
120
ID - Amperes
IXTN550N055T2
Fig. 19. Maximum Transient Thermal Impedance
1.000
Fig. 19. Maximum Transient Thermal Impedance
.sadgsfgsf
0.300
Z (th)JC - ºC / W
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_550N055T2 (V9)712-07-09
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.