MAPLST1820-060CF

RF Power Field Effect Transistor LDMOS, 1800 — 2000 MHz, 60W, 26V 5/24/04 Preliminary MAPLST1820-060CF Features Designed for base station applications in the 1805-1880MHz or 1930-1990MHz Frequency Band. Suitable for GSM, EDGE, TDMA, CDMA, and multi-carrier amplifier applications Typical EDGE performance @ 1880MHz, 26V, Idq=900mA: Output Power: 30W Power Gain: 13dB (typ.) Efficiency: 35% (typ.) Package Style P-238 Maximum Ratings Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 +20, -20 206 -40 to +150 +200 Units Vdc Vdc W °C °C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 0.85 Unit ºC/W NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 1800 — 2000 MHz, 60W, 26V MAPLST1819-060CF 5/24/04 Preliminary Characteristic DC CHARACTERISTICS @ 25ºC Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0) Gate—Source Leakage Current (VGS = 5 Vdc, VDS = 0) Gate Threshold Voltage (VDS = 26 Vdc, Id = 60 mA) Gate Quiescent Voltage (VDS = 26 Vdc, Id = 500 mA) Drain-Source On-Voltage (VGS = 10 Vdc, Id = 1 A) Forward Transconductance (VGS = 10 Vdc, Id = 1 A) DYNAMIC CHARACTERISTICS @ 25ºC Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture) Common-Source Amplifier Gain (VDS = 26 Vdc, IDQ = 500 mA, f = 1880 MHz, POUT = 60 W) Drain Efficiency (VDS = 26 Vdc, IDQ = 500 mA, f = 1880 MHz, POUT = 60 W) Input Return Loss (VDS = 26 Vdc, IDQ = 500 mA, f = 1880 MHz, POUT = 60 W) Output VSWR Tolerance (VDS = 26 Vdc, IDQ = 500 mA, f = 1880 MHz, POUT = 60 W, VSWR = 5:1, All Phase Angles at Frequency of Tests) Gp EFF (ŋ) IRL Ψ — — — 12 48 -10 — — — dB % dB Crss — 3.0 — pF V(BR)DSS IDSS IGSS VGS(th) VDS(on) VDS(on) Gm 65 — — 2 3 — — — — — — — 0.40 2.4 — 10 1 5 4 — — Vdc µAdc µAdc Vdc Vdc Vdc S Symbol Min Typ Max Unit No Degradation In Output Power Before and After Test 2 RF Power LDMOS Transistor, 1800 — 2000 MHz, 60W, 26V MAPLST1819-060CF 5/24/04 Preliminary 18 16 14 12 Gain (dB) 10 8 6 4 2 0 30 35 Pout (dBm) 40 45 Gain EVM Efficiency 45 40 35 Eff. &EVM (%) 30 25 20 15 10 5 0 EDGE: 1990MHz, 26Vdc, IDQ=500mA Graph 1. EDGE: Gain, Efficiency and Error Vector Magnitude vs. Output Power 20 18 16 14 Gain (dB) 12 10 8 6 4 2 0 30 CW: 1990MHz, 26Vdc, IDQ=500mA 50 45 40 30 25 20 15 Gain Efficiency 10 5 0 45 35 POUT (dBm) 40 Graph 2. CW: Gain and Efficiency vs. Output Power Efficiency (%) 35 3 RF Power LDMOS Transistor, 1800 — 2000 MHz, 60W, 26V MAPLST1819-060CF 5/24/04 Preliminary Package Dimensions M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information. 4 North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020