找到“MD311”相关的规格书共2,747个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| NX8567SA311-BC | CEL[CaliforniaEasternLabs] | NX8567SA311-BC - EA MODULATOR AND WAVELENGTH MONITOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH 240, 360, 600 km DWDM APPLICATIONS - California Eastern Labs | 获取价格 | ||
| BM-41EG57MD | BRIGHT[BRIGHTLEDELECTRONICSCORP] | BM-41EG57MD - hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate. - BRIGHT LED ELECTRONICS CORP | 获取价格 | ||
| IRG4BC20MD-S | IRF[InternationalRectifier] | IRG4BC20MD-S - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) - International Rectifier | 获取价格 | ||
| IRG4BC20MD | IRF[InternationalRectifier] | IRG4BC20MD - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) - International Rectifier | 获取价格 | ||
| BM-20EG88MD | BRIGHT[BRIGHTLEDELECTRONICSCORP] | BM-20EG88MD - hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate. - BRIGHT LED ELECTRONICS CORP | 获取价格 | ||
| BM-20EG57MD | BRIGHT[BRIGHTLEDELECTRONICSCORP] | BM-20EG57MD - hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate. - BRIGHT LED ELECTRONICS CORP | 获取价格 | ||
| BM-10EG88MD | BRIGHT[BRIGHTLEDELECTRONICSCORP] | BM-10EG88MD - hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate. - BRIGHT LED ELECTRONICS CORP | 获取价格 |
