FCH072N60F-F085

N-Channel SuperFET II FRFET MOSFET 600 V, 52 A, 72 mΩ D Features „ Typical RDS(on) = 62 mΩ at VGS = 10 V, ID = 26 A „ Typical Qg(tot) = 160 nC at VGS = 10V, ID = 26 A „ UIS Capability G „ Qualified to AEC Q101 G „ RoHS Compliant Description SuperFET® II MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently SuperFETII is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC-DC, Interleaved Boost PFC, Boost PFC for HEV-EV automotive. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. D S TO-247 S Application „ Automotive On Board Charger „ Automotive DC/DC converter for HEV Maximum Ratings TC = 25°C unless otherwise noted Symbol Drain to Source Voltage VDSS VGS ID Parameter Ratings 600 Gate to Source Voltage Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C TC = 100°C Pulsed Drain Current EAS dv/dt PD Single Pulse Avalanche Rating Units V ±20 V 52 A 33 A See Fig 4 A 1128 mJ (Note 2) MOSFET dv/dt 100 Peak Diode Recovery dv/dt (Note 3) V/ns 50 Power Dissipation 481 W Derate Above 25oC 3.85 W/oC TJ, TSTG Operating and Storage Temperature o -55 to + 150 RθJC Maximum Thermal Resistance Junction to Case RθJA Maximum Thermal Resistance Junction to Ambient (Note 4) C 0.26 o C/W 40 o C/W Package Marking and Ordering Information Device Marking FCH072N60F Device FCH072N60F-F085 Package TO-247 Reel Size - Tape Width - Quantity 30 Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 25mH, IAS = 9.5A, VDD = 100V during inductor charging and VDD = 0V during time in avalanche. 3: ISD ≤ 26A, di/dt ≤ 200 A/us, VDD ≤ 380V, starting TJ = 25°C. 4: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJAis determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. ©2014 Semiconductor Components Industries, LLC. August-2017, Rev2 Production Order Number: FCH072N60F-F085/D FCH072N60F-F085 N-Channel Auto SuperFET, 600V, 52A, 72mohm FCH072N60F-F085 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Drain to Source Leakage Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V VDS = 600V, VGS = 0V 600 - - V - - 10 μA TJ = 25oC TJ = 150oC(Note 5) - - 1 mA - - ±100 nA 3.0 4.0 5.0 V - 62 72 mΩ - 154 195 mΩ - 6330 - pF - 199 - pF pF VGS = ±20V On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250μA ID = 26A, VGS = 10V TJ = 25oC TJ = 150oC(Note 5) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Qg(ToT) Total Gate Charge Qg(th) Threshold Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller“ Charge VDS = 100V, VGS = 0V, f = 1MHz f = 1MHz VDD = 380V ID = 26A VGS = 10V - 1.25 - - 0.46 - Ω - 160 210 nC - 11 16 nC - 34 - nC - 67 - nC Switching Characteristics ton Turn-On Time - 75 100 ns td(on) Turn-On Delay Time - 44 - ns tr Rise Time - 31 - ns td(off) Turn-Off Delay Time - 128 - ns tf Fall Time - 22 - ns toff Turn-Off Time - 150 200 ns VDD = 380V, ID = 26A, VGS = 10V, RG = 4.7Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage ISD = 26A, VGS = 0V - - 1.2 V Trr Reverse Recovery Time - 185 - ns Qrr Reverse Recovery Charge IF = 26A, dISD/dt = 100A/μs VDD = 480V - 1515 - nC Note: 5: The maximum value is specified by design at TJ = 150°C. Product is not tested to this condition in production. www.onsemi.com 2 FCH072N60F-F085 N-Channel Auto SuperFET, 600V, 52A, 72mohm Electrical Characteristics TJ = 25°C unless otherwise noted 60 1.0 50 VGS = 10V ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 TC, CASE TEMPERATURE(oC) 30 20 10 0 150 Figure 1. Normalized Power Dissipation vs. Case Temperature 40 25 50 75 100 125 TC, CASE TEMPERATURE(oC) 150 Figure 2. Maximum Continuous Drain Current vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 0.1 DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 0.01 -5 10 -4 -3 10 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 1000 VGS = 10V TC = 25oC IDM, PEAK CURRENT (A) FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I2 150 - TC 125 100 SINGLE PULSE 10 -5 10 -4 10 -3 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 3 -2 10 -1 10 FCH072N60F-F085 N-Channel Auto SuperFET, 600V, 52A, 72mohm Typical Characteristics 150 100 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1000 10us 10 100us 1 OPERATION IN THIS AREA MAY BE LIMITED BY RDS(on) 1ms 10ms 100ms SINGLE PULSE TJ = MAX RATED 0.1 o PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 120 VDS = 20V 90 TJ = 150oC 60 TJ = 25oC 30 TJ = -55oC TC = 25 C 0 0.01 1 10 100 1000 VDS, DRAIN TO SOURCE VOLTAGE (V) 3 Figure 5. Forward Bias Safe Operating Area 150 VGS = 0 V 100 10 TJ = 150 oC TJ = -55 oC TJ = 25 oC 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 80μs PULSE WIDTH TJ = 25oC 120 VGS 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 90 60 30 5V 0 1.4 0 4 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Forward Diode Characteristics Figure 8. Saturation Characteristics 300 80μs PULSE WIDTH TJ = 150oC rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) ID, DRAIN CURRENT (A) 100 60 ID = 26A 250 VGS 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 80 200 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX TJ = 150oC 150 40 100 20 50 TJ = 25oC 5V 0 9 Figure 6. Transfer Characteristics ID, DRAIN CURRENT (A) IS, REVERSE DRAIN CURRENT (A) 200 4 5 6 7 8 VGS, GATE TO SOURCE VOLTAGE (V) 0 4 8 12 16 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 9. Saturation Characteristics 20 0 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) Figure 10. RDSON vs. Gate Voltage www.onsemi.com 4 10 FCH072N60F-F085 N-Channel Auto SuperFET, 600V, 52A, 72mohm Typical Characteristics 1.2 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 2.5 2.0 1.5 1.0 ID = 26A VGS = 10V 0.5 0.0 -80 VGS = VDS ID = 250μA 1.1 NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3.0 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.9 0.8 0.7 0.6 0.5 -80 200 Figure 11. Normalized RDSON vs. Junction Temperature 1.0 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 12. Normalized Gate Threshold Voltage vs. Temperature 100000 1.2 CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 10mA 1.1 1.0 Ciss 10000 1000 Coss 100 0.9 10 0.8 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 1 0.1 200 Figure 13. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature f = 1MHz VGS = 0V Crss 1 10 100 1000 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 14. Capacitance vs. Drain to Source Voltage 28 10 ID = 26A 8 VDS = 240V VDS = 300V 21 VDS = 360V 6 EOSS, [μJ] VGS, GATE TO SOURCE VOLTAGE(V) Figure 16. 4 7 2 0 14 0 30 60 90 120 Qg, GATE CHARGE(nC) 150 180 Figure 15. Gate Charge vs. Gate to Source Voltage 0 0 100 200 300 400 500 VDS, Drain to Source Voltage [V] Figure 16. Eoss vs. Drain to Source Voltage www.onsemi.com 5 600 FCH072N60F-F085 N-Channel Auto SuperFET, 600V, 52A, 72mohm Typical Characteristics Figure 17. Gate Charge Test Circuit & Waveform VDS RG V 10V GS RL VDS 90% VDD VGS DUT VGS 10% td(on) tr t on Figure 18. Resistive Switching Test Circuit & Waveforms VGS Figure 19. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6 td(off) tf t off FCH072N60F-F085 N-Channel Auto SuperFET, 600V, 52A, 72mohm IG = const. + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD Body Diode Forward Voltage Drop Figure 20. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 7 VDD FCH072N60F-F085 N-Channel Auto SuperFET, 600V, 52A, 72mohm DUT ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ❖ © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com