FCH072N60F_F085

MOSFET – N-Channel, SUPERFET II, FRFET 600 V, 52 A, 72 mW FCH072N60F-F085 Description SUPERFET® II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently SUPERFETII is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC−DC, Interleaved Boost PFC, Boost PFC for HEV−EV automotive. SUPERFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. Features • • • • • www.onsemi.com VDSS RDS(ON) MAX ID MAX 600 V 72 mW 52 A D G Typical RDS(on) = 62 mW at VGS = 10 V, ID = 26 A Typical Qg(tot) = 160 nC at VGS = 10 V, ID = 26 A UIS Capability Qualified to AEC Q101 and PPAP Capable This Device is Pb−Free and is RoHS Compliant S N-Channel MOSFET Applications • Automotive On Board Charger • Automotive DC/DC Converter for HEV G D S TO−247 CASE 340CK MARKING DIAGRAM $Y&Z&3&K FCH 072N60F $Y &Z &3 &K FCH072N60F = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2014 November, 2020 − Rev. 3 1 Publication Order Number: FCH072N60F−F085/D FCH072N60F−F085 MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) Symbol Ratings Unit VDSS Drain to Source Voltage 600 V VGS Gate to Source Voltage ±20 V 52 33 A ID Parameter Drain Current − Continuous (VGS = 10) (Note 1) TC = 25°C TC = 100°C Pulsed Drain Current See Fig. 4 EAS Single Pulsed Avalanche Rating (Note 2) 1128 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 Power Dissipation 481 W Derate Above 25°C 3.85 W/°C −55 to +150 °C PD TJ, TSTG Operating and Storage Temperature (Note 4) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by bondwire configuration. 2. Starting TJ = 25°C, L = 25 mH, IAS = 9.5 A, VDD = 100 V during inductor charging and VDD = 0 V during time in avalanche. 3. ISD ≤ 26 A, di/dt ≤ 200 A/ms, VDD ≤ 380 V, starting TJ = 25°C. 4. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design, while RqJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. THERMAL CHARACTERISTICS Symbol Parameter RqJC Thermal Resistance, Junction to Case, Max. RqJA Thermal Resistance, Junction to Ambient, Max. (Note 4) Ratings Unit 0.26 _C/W 40 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Reel Size Tape Width Quantity FCH072N60F−F085 FCH072N60F TO−247−3LD − − 30 www.onsemi.com 2 FCH072N60F−F085 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit 600 − − V OFF CHARACTERISTICS BVDSS IDSS IGSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 250 mA Drain to Source Leakage Current VDS = 600 V, VGS = 0 V, TJ = 25_C − − 10 mA VDS = 600 V, VGS = 0 V, TJ = 150_C (Note 5) − − 1 mA VGS = ±20 V − − ±100 nA 3.0 4.0 5.0 V Gate to Source Leakage Current ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA rDS(on) Drain to Source On Resistance VGS = 10 V, ID = 26 A, TJ = 25_C − 62 72 mW VGS = 10 V, ID = 26 A, TJ = 150_C (Note 5) − 154 195 mW VDS = 100 V, VGS = 0 V, f = 1 MHz − 6330 − pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance − 199 − pF Crss Reverse Transfer Capacitance − 1.25 − pF Rg Qg(TOT) Gate Resistance f = 1 MHz − 0.46 − W Total Gate Charge VDD = 380 V, ID = 26 A, VGS = 10 V − 160 210 nC Threshold Gate Charge − 11 16 nC Qgs Gate to Source Gate Charge − 34 − nC Qgd Gate to Drain “Miller” Charge − 67 − nC − 75 100 ns Qg(th) SWITCHING CHARACTERISTICS ton td(on) tr td(off) tf toff Turn-On Time Turn-On Delay Time VDD = 380 V, ID = 26 A, VGS = 10 V, RG = 4.7 W − 44 − ns Rise Time − 31 − ns Turn-Off Delay Time − 128 − ns Fall Time − 22 − ns Turn-Off Time − 150 200 ns DRAIN−SOURCE DIODE CHARACTERISTICS Source to Drain Diode Voltage ISD = 26 A, VGS = 0 V − − 1.2 V Trr Reverse Recovery Time − 185 − ns Qrr Reverse Recovery Charge IF = 26 A, dISD/dt = 100 A/ms VDD = 480 V − 1515 − nC VSD Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. The maximum value is specified by design at TJ = 150°C. Product is not tested to this condition in production. www.onsemi.com 3 FCH072N60F−F085 1.2 60 1.0 50 VGS = 10 V ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER TYPICAL CHARACTERISTICS 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 40 30 20 10 0 150 25 50 TC, CASE TEMPERATURE (°C) 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 1. Normalized Power Dissipation vs. Case Temperature Figure 2. Maximum Continuous Drain Current vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, ZqJC 2 1 0.1 DUTY CYCLE − DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t 1/t 2 PEAK T J = PDM x Z qJC x RqJC + TC SINGLE PULSE 0.01 10−5 10−4 10−3 10−2 10−1 100 101 t, RECTANGULAR PULSE DURATION (s) Figure 3. Normalized Maximum Transient Thermal Impedance 1000 VGS = 10 V T C = 25 o C IDM, PEAK CURRENT (A) FOR TEMPERATURES ABOVE 25 o C DE RATE PEAK CURRENT AS FOLLOWS: I = I2 100 10 ƪǸ 150 * T C 125 ƫ SINGLE PULSE 10−5 10−4 10−3 t, RECTANGULAR PULSE DURATION (s) Figure 4. Peak Current Capability www.onsemi.com 4 10−2 10−1 FCH072N60F−F085 TYPICAL CHARACTERISTICS (continued) 150 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1000 10 ms 100 100 ms 10 OPERATION IN THIS AREA MAY BE LIMITED BY RDS(on) 1 1 ms 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 120 1 90 TJ = 150oC 60 TJ = 25oC 30 10 100 0 1000 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area TJ = −55oC 200 150 VGS = 0 V 100 10 TJ = 150 oC TJ = −55oC TJ = 25 oC 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 120 15 V Top 10 V 8V 7V 6V 5.5V 5V Bottom 90 60 30 0 1.4 VGS 5V 0 rDS(on), DRAIN TO SOURCE ON−RESISTANCE (mW) VGS 15 V Top 10 V 8V 7V 6V 5.5V 5V Bottom 40 8 12 20 0 4 8 12 16 20 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX ID = 26 A 250 200 TJ = 150 o C 150 100 50 TJ = 25o C 5V 0 16 Figure 8. Saturation Characteristics 300 80 m s PULSE WIDTH TJ = 150 o C 60 4 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Forward Diode Characteristics 80 9 80 ms PULSE WIDTH TJ = 25o C VSD, BODY DIODE FORWARD VOLTAGE (V) 100 5 6 7 8 4 VGS, GATE TO SOURCE VOLTAGE(V) 3 Figure 6. Transfer Characteristics ID, DRAIN CURRENT (A) IS, REVERSE DRAIN CURRENT (A) VDS = 20V TC = 25 o C 0.1 ID, DRAIN CURRENT (A) PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 0 20 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. RDSON vs. Gate Voltage Figure 9. Saturation Characteristics www.onsemi.com 5 10 FCH072N60F−F085 3.0 1.2 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 2.5 NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE ON−RESISTANCE TYPICAL CHARACTERISTICS (continued) 2.0 1.5 1.0 ID = 26 A VGS = 10 V 0.5 0.0 −80 −40 0 40 80 120 VGS = VDS ID = 250 m A 1.1 1.0 0.9 0.8 0.7 0.6 160 0.5 −80 200 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 12. Normalized Gate Threshold Voltage vs. Temperature Figure 11. Normalized RDSON vs. Junction Temperature 100000 1.2 ID = 10 mA CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE −40 1.1 1.0 0.9 Ciss 10000 1000 Coss 100 10 0.8 −80 −40 0 40 80 120 160 f = 1MHz VGS = 0 V 1 0.1 200 Crss 1 10 100 1000 VDS, DRAIN TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 14. Capacitance vs. Drain to Source Voltage Figure 13. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature ID = 26 A VDS = 240 V 21 8 VDS = 300 V VDS = 360 V Eoss, (mJ) VGS, GATE TO SOURCE VOLTAGE(V) 28 10 6 4 14 7 2 0 0 0 30 60 90 120 150 180 0 100 200 300 400 500 600 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 15. Gate Charge vs. Gate to Source Voltage Figure 16. Eoss vs. Drain to Source Voltage www.onsemi.com 6 FCH072N60F−F085 VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 17. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr tf td(off) ton toff Figure 18. Resistive Switching Test Circuit & Waveforms L E AS + 1 LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 19. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time FCH072N60F−F085 + DUT VDS − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 20. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. FRFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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