FCMT099N65S3
Power MOSFET, N-Channel,
SUPERFET) III, Easy Drive,
650 V, 30 A, 99 mW
Description
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET
is very suitable for the switching power applications such as server /
telecom power, adaptor and solar inverter applications.
The Power88 package is an ultra−slim surface−mount package
(1 mm high) with a low profile and small footprint (8x8 mm2).
SUPERFET III MOSFET in a Power88 package offers excellent
switching performance due to lower parasitic source inductance and
separated power and drive sources. Power88 offers Moisture
Sensitivity Level 1 (MSL 1).
VDSS
RDS(ON) MAX
ID MAX
650 V
99 mW @ 10 V
30 A
D
G
S1
S1: Driver Source
S2: Power Source
S2
POWER MOSFET
Features
•
•
•
•
•
•
www.onsemi.com
700 V @ TJ = 150°C
Typ. RDS(on) = 87 mW
Ultra Low Gate Charge (Typ. Qg = 56 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 500 pF)
100% Avalanche Tested
These Devices are Pb−Free and are RoHS Compliant
S2
S2
G
Power88
PQFN4 8X8 2P
CASE 483AP
Applications
• Telecom / Server Power Supplies
• Industrial Power Supplies
• UPS / Solar
S1
MARKING DIAGRAM
$Y&Z&3&K
FCMT
099N65S3
$Y
&Z
&3
&K
FCMT099N65S3
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
July, 2018 − Rev. 2
1
Publication Order Number:
FCMT099N65S3/D
FCMT099N65S3
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified)
Symbol
Parameter
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
ID
Drain Current
FCMT099N65S3
Unit
650
V
DC
±30
V
AC (f > 1 Hz)
±30
V
Continuous (TC = 25°C)
30
A
Continuous (TC = 100°C)
19
IDM
Drain Current
75
A
EAS
Single Pulsed Avalanche Energy (Note 2)
145
mJ
IAS
Avalanche Current (Note 1)
4.4
A
EAR
Repetitive Avalanche Energy (Note 1)
2.27
mJ
dv/dt
MOSFET dv/dt
100
V/ns
Peak Diode Recovery dv/dt (Note 3)
20
PD
TJ, TSTG
TL
Pulsed (Note 1)
Power Dissipation
(TC = 25°C)
227
W
Derate Above 25°C
1.82
W/°C
−55 to +150
°C
300
°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 4.4 A, RG = 25 W, starting TJ = 25°C.
3. ISD ≤ 15 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
Thermal Resistance, Junction to Case, Max.
RqJA
Thermal Resistance, Junction to Ambient, Max. (Note 4)
FCMT099N65S3
Unit
0.55
_C/W
45
4. Device on 1 in2 pad 2 oz copper pad on 1.5 x 1.5 in. board of FR−4 material.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Reel Size
Tape Width
Shipping†
FCMT099N65S3
FCMT099N65S3
Power88
13”
13.3 mm
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
FCMT099N65S3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VGS = 0 V, ID = 1 mA, TJ = 25_C
650
−
−
V
VGS = 0 V, ID = 1 mA, TJ = 150_C
700
−
−
V
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
DBVDSS/DTJ
Breakdown Voltage Temperature
Coefficient
ID = 1 mA, Referenced to 25_C
−
0.68
−
V/_C
IDSS
Zero Gate Voltage Drain Current
VDS = 650 V, VGS = 0 V
−
−
10
mA
VDS = 520 V, TC = 125_C
−
2.77
−
IGSS
Gate to Body Leakage Current
VGS = ±30 V, VDS = 0 V
−
−
±100
nA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 3 mA
2.5
−
4.5
V
RDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 15 A
−
87
99
mW
Forward Transconductance
VDS = 20 V, ID = 15 A
−
17
−
S
VDS = 400 V, VGS = 0 V, f = 1 MHz
−
2270
−
pF
−
50
−
pF
gFS
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Coss(eff.)
Effective Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
−
500
−
pF
Coss(er.)
Energy Related Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
−
74
−
pF
Total Gate Charge at 10 V
VDS = 400 V, ID = 15 A, VGS = 10 V
(Note 5)
−
56
−
nC
−
13
−
nC
Qg(tot)
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance
−
23
−
nC
f = 1 MHz
−
0.5
−
W
VDD = 400 V, ID = 15 A,
VGS = 10 V, Rg = 4.7 W
(Note 5)
−
22
−
ns
−
20
−
ns
SWITCHING CHARACTERISTICS
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
−
58
−
ns
Turn-Off Fall Time
−
5
−
ns
Maximum Continuous Source to Drain Diode Forward Current
−
−
30
A
ISM
Maximum Pulsed Source to Drain Diode Forward Current
−
−
75
A
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, ISD = 15 A
−
−
1.2
V
trr
Reverse Recovery Time
−
352
−
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 15 A,
dIF/dt = 100 A/ms
−
6.5
−
mC
tf
SOURCE-DRAIN DIODE CHARACTERISTICS
IS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Essentially independent of operating temperature typical characteristics.
www.onsemi.com
3
FCMT099N65S3
TYPICAL PERFORMANCE CHARACTERISTICS
80
VGS = 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
10
5.5 V
ID, Drain Current (A)
ID, Drain Current (A)
80
1
VDS = 20 V
250 ms Pulse Test
150°C
10
25°C
−55°C
0.1
0.1
250 ms Pulse Test
TC = 25°C
1
10
VDS, Drain−Source Voltage (V)
1
20
2
Figure 1. On−Region Characteristics
100
TC = 25°C
0.3
0.2
VGS = 10 V
0.1
VGS = 20 V
0.0
0
20
40
60
ID, Drain Current (A)
10
25°C
0.1
−55°C
0.01
VGS, Gate−Source Voltage (V)
10
Ciss
1000
Coss
10
1
0.1
0.1
VGS = 0 V
f = 1 MHz
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1
10
100
VDS, Drain−Source Voltage (V)
0.5
1.0
1.5
VSD, Body Diode Forward Voltage (V)
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
100000
Capacitances (pF)
150°C
1
Figure 3. On−Resistance Variation vs.
Drain Current and Gate Voltage
100
9
VGS = 0 V
250 ms Pulse Test
0.001
0.0
80
10000
4
5
7
8
6
VGS, Gate−Source Voltage (V)
Figure 2. Transfer Characteristics
IS, Reverse Drain Current (A)
RDS(ON), Drain−Source
On−Resistance (W)
0.4
3
Crss
8
Figure 5. Capacitance Characteristics
VDS = 130 V
6
VDS = 400 V
4
2
0
1000
ID = 15 A
0
15
30
45
Qg, Total Gate Charge (nC)
60
Figure 6. Gate Charge Characteristics
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4
FCMT099N65S3
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
3.0
VGS = 0 V
ID = 10 mA
RDS(on), Drain−Source
On−Resistance (Normalized)
BVDSS, Drain−Source
Breakdown Voltage (Normalized)
1.2
1.1
1.0
0.9
0.8
−50
2.5
2.0
1.5
1.0
0.5
0.0
50
100
150
0
TJ, Junction Temperature (5C)
ID, Drain Current (A)
ID, Drain Current (A)
100 ms
1 ms
10 ms
DC
1
Operation in this Area
is Limited by RDS(on)
TC = 25°C
TJ = 150°C
Single Pulse
0.1
0.01
1
10
100
VDS, Drain−Source Voltage (V)
EOSS, (mJ)
10
50
75
100
125
TC, Case Temperature (5C)
150
Figure 10. Maximum Drain Current
vs. Case Temperature
15
10
5
130
260
390
520
VDS, Drain to Source Voltage (V)
20
0
25
1000
Figure 9. Maximum Safe Operating Area
0
0
0
50
100
150
TJ, Junction Temperature (5C)
30
10 ms
10
−50
Figure 8. On−Resistance Variation
vs. Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
100
VGS = 10 V
ID = 15 A
650
Figure 11. EOSS vs. Drain to Source Voltage
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5
FCMT099N65S3
r(t), Normalized Effective Transient
Thermal Resistance
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
2
1
0.1
DUTY CYCLE − DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
0.001
−5
10
SINGLE PULSE
−4
10
t2
ZqJC(t) = r(t) x RqJC
RqJC = 0.55°C/W
Peak TJ = PDM x ZqJC(t) + TC
Duty Cycle, D = t1 / t2
−3
−2
10
10
t, Rectangular Pulse Duration (sec)
Figure 12. Transient Thermal Response Curve
www.onsemi.com
6
−1
10
0
10
FCMT099N65S3
VGS
RL
Qg
VDS
VGS
Qgs
Qgd
DUT
IG = Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
RL
VDS
VDS
90%
90%
90%
VDD
VGS
RG
VGS
DUT
VGS
10%
td(on)
10%
tr
td(off)
ton
tf
toff
Figure 14. Resistive Switching Test Circuit & Waveforms
L
E AS + 1 @ LI AS
2
VDS
BVDSS
ID
IAS
RG
VDD
DUT
VGS
2
ID(t)
VDD
VDS(t)
tp
tp
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
www.onsemi.com
7
Time
FCMT099N65S3
+
DUT
VDS
−
ISD
L
Driver
RG
Same Type
as DUT
VGS
− dv/dt controlled by RG
− ISD controlled by pulse period
D+
VGS
(Driver)
VDD
Gate Pulse Width
Gate Pulse Period
10 V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(DUT)
VDD
VSD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN4 8X8, 2P
CASE 483AP
ISSUE O
DATE 30 SEP 2016
DOCUMENT NUMBER:
STATUS:
98AON13664G
ON SEMICONDUCTOR STANDARD
NEW STANDARD:
© Semiconductor Components Industries, LLC, 2002
October, DESCRIPTION:
2002 − Rev. 0
PQFN4 8X8, 2P
http://onsemi.com
1
Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
Case Outline Number:
PAGE 1 OFXXX
2
DOCUMENT NUMBER:
98AON13664G
PAGE 2 OF 2
ISSUE
O
REVISION
RELEASED FOR PRODUCTION FROM FAIRCHILD PQFN04A TO ON
SEMICONDUCTOR. REQ. BY I. CAMBALIZA.
DATE
30 SEP 2016
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© Semiconductor Components Industries, LLC, 2016
September, 2016 − Rev. O
Case Outline Number:
483AP
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