FCMT360N65S3

MOSFET – Power, N-Channel, SUPERFET) III, Easy-Drive 650 V, 10 A, 360 mW FCMT360N65S3 www.onsemi.com General Description SuperFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET Easy−drive series helps manage EMI issues and allows for easier design implementation. The Power88 package is an ultra−slim surface−mount package (1 mm high) with a low profile and small footprint (8x8 mm2). SuperFET III MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductance and separated power and drive sources. Power88 offers Moisture Sensitivity Level 1 (MSL 1). Features • • • • • • 700 V @ TJ = 150°C Typ RDS(on) = 310 m Ultra Low Gate Charge (Typ. Qg = 18 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 173 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant Applications • • • • Computing / Display Power Supplies Telecom / Server Power Supplies Industrial Power Supplies Lighting / Charger / Adapter VDSS RDS(ON) MAX ID MAX 650 V 360 m @ 10 V 10 A D S1 : Driver Source S2 : Power Source G S1 S2 N-CHANNEL MOSFET S2 S2 PQFN4 8X8 2P CASE 483AP S1 G MARKING DIAGRAM &Z&3&K FCMT 360N65S3 &Z &3 &K FCMT360N65S3 = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2018 February, 2020 − Rev. 1 1 Publication Order Number: FCMT360N65S3/D FCMT360N65S3 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 650 V DC ±30 V AC (f > 1 Hz) ±30 V Continuous (TC = 25°C) 10 A Continuous (TC = 100°C) 6 Pulsed (Note 1) IDM Drain Current 25 A EAS Single Pulsed Avalanche Energy (Note 2) 40 mJ IAS Avalanche Current (Note 1) 2.1 A EAR Repetitive Avalanche Energy (Note 1) 0.83 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD Power Dissipation (TC = 25°C) Derate Above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s 83 W 0.67 W/°C −55 to +150 °C 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 2.1 A, RG = 25  starting TJ = 25°C 3. ISD ≤ 5 A, di/dt ≤ 200 A/s, VDD ≤ 400 V, starting TJ = 25°C THERMAL CHARACTERISTICS Symbol Parameter Value Unit °C/W RJC Thermal Resistance, Junction to Case, Max. 1.5 RJA Thermal Resistance, Junction to Ambient, Max. (Note 4) 45 4. Device on 1 in2 pad 2 oz copper pad on 1.5 x 1.5 in. board of FR−4 material. ORDERING INFORMATION Device Marking Package Reel Size Tape Width Quantity† FCMT360N65S3 FCMT360N65S3 PQFN8 13″ 13.3 mm 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 FCMT360N65S3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 1 mA, TJ = 25°C 650 V VGS = 0 V, ID = 1 mA, TJ = 150°C 700 V BVDSS /TJ Breakdown Voltage Temperature Coefficient ID = 1mA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V 0.68 VDS = 520 V, TC = 125 °C IGSS Gate to Source Leakage Current V/°C 10 A ±100 nA 4.5 V 360 m 0.58 VGS = ±30 V, VDS = 0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 200 A RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 5 A 310 Forward Transconductance VDS = 20 V, ID = 5 A 6 S VDS = 400 V, VGS = 0 V, f = 1 MHz 730 pF gFS 2.5 DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance 15 pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 173 pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 26 pF Total Gate Charge at 10 V VDS = 400 V, VGS = 10 V, ID = 5 A (Note 5) 18 nC 4.3 nC 7.6 nC f = 1 MHz 1  VDD = 400 V, ID = 5 A, VGS = 10 V, RGEN = 4.7  (Note 5) 12 ns 11 ns Turn-Off Delay Time 34 ns Fall Time 10 ns Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance SWITCHING CHARACTERISTICS td(on) tr td(off) tf Turn-On Delay Time Rise Time SOURCE−DRAIN DIODE CHARACTERISTICS Source to Drain Diode Forward VoltageMaximum Continuous Source to Drain Diode Forward Current 10 A ISM Maximum Pulsed Source to Drain Diode Forward Current 25 A VSD IS Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 5 A trr Reverse Recovery Time Qrr Reverse Recovery Charge VDD = 400 V, ISD = 5 A, diF/dt = 100 A/s 1.2 V 241 ns 2.4 C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 FCMT360N65S3 TYPICAL PERFORMANCE CHARACTERISTICS ID, Drain Current[A] 10 50 VGS = 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V ID, Drain Current[A] 50 1 *Notes: 1. VDS = 20V 2. 250 s Pulse Test 10 o 150 C o 25 C 1 o −55 C *Notes: 1. 250 s Pulse Test o 2. TC = 25 C 0.1 0.2 1 10 VDS, Drain−Source Voltage[V] 0.1 20 2 Figure 1. On-Region Characteristics *Notes: 1. VGS = 0V 1.0 0.8 0.6 VGS = 10V VGS = 20V 0.2 0.0 0 5 10 15 20 ID, Drain Current [A] 25 10 o 1 o 25 C 0.1 o VGS, Gate−Source Voltage [V] Capacitances [pF] 10000 1 Ciss Coss *Note: 1. VGS = 0V 2. f = 1MHz Ciss = C gs + Cgd (C ds = shorted) Coss = C ds + Cgd Crss = Cgd 0.1 0.1 1 10 100 VDS, Drain−Source Voltage [V] 0.0 0.5 1.0 VSD, Body Diode Forward Voltage [V] 1.5 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 10 100 −55 C 0.01 100000 1000 2. 250 s Pulse Test 150 C 0.001 30 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 10 8 100 o *Note: TC = 25 C 0.4 4 5 6 7 VGS, Gate−Source Voltage[V] Figure 2. Transfer Characteristics IS, Reverse Drain Current [A] RDS(ON), Drain−Source On−Resistance [ ] 1.2 3 Crss 8 Figure 5. Capacitance Characteristics VDS = 130V VDS = 400V 6 4 2 0 1000 *Note: I D = 5A 0 5 10 15 Qg, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics www.onsemi.com 4 20 FCMT360N65S3 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 3.0 *Notes: 1. VGS = 0V 2. I D = 10mA 1.1 RDS(on), [Normalized] Drain−Source On−Resistance BVDSS, [Normalized] Drain−Source Breakdown Voltage 1.2 1.0 0.9 0.8 −50 0 50 100 o TJ, Junction Temperature [ C] 1.0 0.5 −50 0 50 100 o TJ, Junction Temperature [ C] 150 12 10 10 s 10 ID, Drain Current [A] 100 s 1ms 10ms DC 1 Operation in This Area is Limited by R DS(on) *Notes: 0.1 o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain−Source Voltage [V] 4 3 2 1 130 260 390 520 VDS, Drain to Source Voltage [V] 4 25 50 75 100 125 TC, Case Temperature [ o C] 150 Figure 10. Maximum Drain Current vs. Case Temperature 5 0 6 0 1000 Figure 9. Maximum Safe Operation Area 0 8 2 o EOSS [ J] 1.5 Figure 8. On-Resistance Variant vs. Temperature 100 ID, Drain Current [A] 2.0 0.0 150 Figure 7. Breakdown Voltage Variation vs. Temperature 0.01 2.5 *Notes: 1. VGS = 10V 2. I D = 5A 650 Figure 11. EOSS vs. Drain to Source Voltage www.onsemi.com 5 FCMT360N65S3 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 2 1 0.1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 0.001 −5 10 NOTES: Z JC(t) = r(t) x RJC RJC = 1.5 oC/W Peak T J = PDM x ZJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE −4 10 −3 10 −2 −1 10 10 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Transient Thermal Response Curve www.onsemi.com 6 0 10 1 10 2 10 FCMT360N65S3 VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% td(off) tr ton tf toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time FCMT360N65S3 + DUT VDS − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC. www.onsemi.com 8 VDD MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PQFN4 8X8, 2P CASE 483AP ISSUE A DOCUMENT NUMBER: 98AON13664G DESCRIPTION: PQFN4 8X8, 2P DATE 06 JUL 2021 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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