FCMT250N65S3

MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 12 A, 250 mW FCMT250N65S3 Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy−drive series helps manage EMI issues and allows for easier design implementation. The Power88 package is an ultra−slim surface−mount package (1 mm high) with a low profile and small footprint (8x8 mm2). SUPERFET III MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductance and separated power and drive sources. Power88 offers Moisture Sensitivity Level 1 (MSL 1). VDSS RDS(ON) MAX ID MAX 650 V 250 m @ 10 V 12 A D G S1 700 V @ TJ = 150 °C Typ RDS(on) = 210 m Ultra Low Gate Charge (Typ. Qg = 24 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant S2 S2 S2 Telecom / Server Power Supplies Industrial Power Supplies UPS / Solar Lighting / Charger / Adapter S1 G PQFN4 8X8 2P CASE 483AP Applications • • • • S1: Driver Source S2: Power Source POWER MOSFET Features • • • • • • www.onsemi.com MARKING DIAGRAM $Y&Z&3&K FCMT 250N65S3 $Y &Z &3 &K FCMT250N65S3 = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 February, 2020 − Rev. 5 1 Publication Order Number: FCMT250N65S3/D FCMT250N65S3 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 650 V DC ±30 V AC (f > 1 Hz) ±30 V Continuous (TC = 25°C) 12 A Continuous (TC = 100°C) 7.6 Pulsed (Note 1) IDM Drain Current 30 A EAS Single Pulsed Avalanche Energy (Note 2) 57 mJ IAS Avalanche Current (Note 2) 2.3 A EAR Repetitive Avalanche Energy (Note 1) 0.9 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD Power Dissipation (TC = 25°C) 90 W 0.72 W/°C −55 to +150 °C 300 °C Derate Above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 2.3 A, RG = 25  starting TJ = 25°C 3. ISD ≤ 6 A, di/dt ≤ 200 A/s, VDD ≤ 400 V, starting TJ = 25°C THERMAL CHARACTERISTICS Symbol Parameter Value Unit RJC Thermal Resistance, Junction to Case, Max. 1.39 °C/W RJA Thermal Resistance, Junction to Ambient, Max. (Note 4) 45 4. Device on 1 in2 pad 2 oz copper pad on 1.5 x 1.5 in. board of FR−4 material. ORDERING INFORMATION Part Number Top Marking Package Reel Size Tape Width Shipping† FCMT250N65S3 FCMT250N65S3 PQFN8 13” 13.3 mm 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 FCMT250N65S3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 1 mA, TJ = 25°C 650 V VGS = 0 V, ID = 1 mA, TJ = 150°C 700 V BVDSS /TJ Breakdown Voltage Temperature Coefficient ID = 1mA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V 0.67 VDS = 520 V, TC = 125 °C IGSS Gate to Source Leakage Current V/°C 10 A ±100 nA 4.5 V 250 m 0.77 VGS = ±30 V, VDS = 0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 0.29 mA RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 6 A 210 Forward Transconductance VDS = 20 V, ID = 6 A 7.4 S VDS = 400 V, VGS = 0 V, f = 1 MHz 1010 pF gFS 2.5 DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance 25 pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 248 pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 33 pF Total Gate Charge at 10 V VDS = 400 V, ID = 6 A, VGS = 10 V, (Note 5) 24 nC 6.1 nC 9.7 nC f = 1 MHz 1.1  VDD = 400 V, ID = 6 A, VGS = 10 V, RGEN = 4.7  (Note 5) 15 ns 13 ns Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn−On Rise Time td(off) Turn-Off Delay Time 40 ns Turn−On Fall Time 7.2 ns tf SOURCE−DRAIN DIODE CHARACTERISTICS Maximum Continuous Source to Drain Diode Forward Current 12 A ISM Maximum Pulsed Source to Drain Diode Forward Current 30 A VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 6 A 1.2 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VDD = 400 V, ISD = 6 A, diF/dt = 100 A/s IS 251 ns 3.4 C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 FCMT250N65S3 TYPICAL PERFORMANCE CHARACTERISTICS 30 VGS = 10.0 V 8.0 V 7.0 V 10 6.5 V 6.0 V 5.5 V ID, Drain Current (A) ID, Drain Current (A) 40 1 0.1 0.2 250 s Pulse Test TC = 25°C 1 10 VDS, Drain−Source Voltage (V) 10 150°C 25°C −55°C 1 20 VDS = 20 V 250 s Pulse Test 3 Figure 1. On−Region Characteristics 100 TC = 25°C 0.4 0.3 VGS = 10 V VGS = 20 V 0.2 0.0 0 10 150°C 1 25°C 0.1 −55°C 5 10 15 20 ID, Drain Current (A) 0.001 0.0 25 10 5 VGS, Gate−Source Voltage (V) 10 4 10 3 Ciss 10 2 0.5 1.0 1.5 VSD, Body Diode Forward Voltage (V) Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage Capacitances (pF) VGS = 0 V 250 s Pulse Test 0.01 0.1 10 9 Figure 2. Transfer Characteristics IS, Reverse Drain Current (A) RDS(ON), Drain−Source On−Resistance (W) 0.5 4 5 6 7 8 VGS, Gate−Source Voltage (V) Coss 101 VGS = 0 V f = 1 MHz Ciss = Cgs + Cgd (Cds = shorted) 0 Crss 10 Coss = Cds + Cgd Crss = Cgd −1 10 −1 0 1 2 3 10 10 10 10 10 VDS, Drain−Source Voltage (V) 8 VDS = 130 V VDS = 400 V 6 4 2 0 Figure 5. Capacitance Characteristics ID = 6 A 0 6 12 18 24 Qg, Total Gate Charge (nC) 30 Figure 6. Gate Charge Characteristics www.onsemi.com 4 FCMT250N65S3 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 3.0 VGS = 0 V ID = 10 mA RDS(on), Drain−Source On−Resistance (Normalized) BVDSS, Drain−Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 −50 2.5 2.0 1.5 1.0 0.5 0.0 50 100 150 0 TJ, Junction Temperature (5C) 30 s 10 ID, Drain Current (A) ID, Drain Current (A) 0 50 100 150 TJ, Junction Temperature (5C) 15 100 100 s 1 ms 10 ms 1 DC Operation in this Area is Limited by RDS(on) TC = 25°C TJ = 150°C Single Pulse 0.1 1 10 100 VDS, Drain−Source Voltage (V) 4 2 130 260 390 520 VDS, Drain to Source Voltage (V) 5 50 75 100 125 TC, Case Temperature (5C) 150 Figure 10. Maximum Drain Current vs. Case Temperature 6 0 0 10 0 25 1000 Figure 9. Maximum Safe Operating Area EOSS, (mJ) −50 Figure 8. On−Resistance Variation vs. Temperature Figure 7. Breakdown Voltage Variation vs. Temperature 0.01 VGS = 10 V ID = 6 A 650 Figure 11. EOSS vs. Drain to Source Voltage www.onsemi.com 5 FCMT250N65S3 r(t), Normalized Effective Transient Thermal Resistance TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 2 1 0.1 0.01 0.001 −5 10 DUTY CYCLE − DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 SINGLE PULSE −4 10 t2 ZJC(t) = r(t) x RJC RJC = 1.39°C/W Peak TJ = PDM x ZJC(t) + TC Duty Cycle, D = t1 / t2 −3 −2 10 10 t, Rectangular Pulse Duration (sec) Figure 12. Transient Thermal Response Curve www.onsemi.com 6 −1 10 0 10 FCMT250N65S3 VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr td(off) ton tf toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time FCMT250N65S3 + DUT VDS − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PQFN4 8X8, 2P CASE 483AP ISSUE O DOCUMENT NUMBER: 98AON13664G DESCRIPTION: PQFN4 8X8, 2P DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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