FCMT125N65S3

MOSFET – Power, N-Channel, SUPERFET) III, Easy-Drive 650 V, 24 A, 125 mW FCMT125N65S3 www.onsemi.com General Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy−drive series helps manage EMI issues and allows for easier design implementation. The Power88 package is an ultra−slim surface−mount package (1 mm high) with a low profile and small footprint (8 × 8 mm2). SUPERFET III MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductance and separated power and drive sources. Power88 offers Moisture Sensitivity Level 1 (MSL 1). Features • • • • • • 700 V @ TJ = 150°C Typ RDS(on) = 100 m Ultra Low Gate Charge (Typ. Qg = 49 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 406 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant Applications • Telecom / Server Power Supplies • Industrial Power Supplies • UPS / Solar VDSS RDS(ON) MAX ID MAX 650 V 125 m @ 10 V 24 A D S1: Driver Source S2: Power Source G S1 S2 N-CHANNEL MOSFET S2 S2 PQFN4 8X8 2P CASE 483AP S1 G MARKING DIAGRAM $Y&Z&3&K FCMT 125N65S3 $Y &Z &3 &K FCMT125N65S3 = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2018 February, 2020 − Rev. 2 1 Publication Order Number: FCMT125N65S3/D FCMT125N65S3 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 650 V DC ±30 V AC (f > 1 Hz) ±30 V Continuous (TC = 25°C) 24 A Continuous (TC = 100°C) 15 IDM Drain Current 60 A EAS Single Pulsed Avalanche Energy (Note 2) 115 mJ IAS Avalanche Current (Note 2) 3.7 A EAR Repetitive Avalanche Energy (Note 1) 1.81 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD Pulsed (Note 1) Power Dissipation TJ, TSTG TL (TC = 25°C) 181 W Derate Above 25°C 1.45 W/°C −55 to +150 °C 300 °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 3.7 A, RG = 25  starting TJ = 25°C 3. ISD ≤ 12 A, di/dt ≤ 200 A/s, VDD ≤ 400 V, starting TJ = 25°C THERMAL CHARACTERISTICS Symbol Parameter Value Unit RJC Thermal Resistance, Junction to Case, Max. 0.69 °C/W RJA Thermal Resistance, Junction to Ambient, Max. (Note 4) 45 4. Device on 1 in2 pad 2 oz copper pad on 1.5 × 1.5 in. board of FR−4 material. ORDERING INFORMATION Device Marking Package Reel Size Tape Width Quantity† FCMT125N65S3 FCMT125N65S3 PQFN8 13″ 13.3 mm 3000 Units †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 FCMT125N65S3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit VGS = 0 V, ID = 1 mA, TJ = 25_C 650 V VGS = 0 V, ID = 1 mA, TJ = 150_C 700 V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage BVDSS/TJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V IGSS Gate to Body Leakage Current 0.68 V/_C 10 A ±100 nA 4.5 V 125 m 1.35 VDS = 520 V, TC = 125_C VGS = ±30 V, VDS = 0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 12 A 100 Forward Transconductance VDS = 20 V, ID = 12 A 16 S 1920 pF 44 pF gFS VGS = VDS, ID = 0.59 mA 2.5 DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 406 pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 63 pF Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance 49 nC VDS = 400 V, ID = 12 A, VGS = 10 V (Note 5) 12 nC 22 nC f = 1 MHz 0.5  22 ns 22 ns 60 ns 5.8 ns SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf VDD = 400 V, ID = 12 A, VGS = 10 V, Rg = 4.7  (Note 5) Turn-Off Fall Time SOURCE-DRAIN DIODE CHARACTERISTICS Maximum Continuous Source to Drain Diode Forward Current 24 A ISM Maximum Pulsed Source to Drain Diode Forward Current 60 A VSD Source to Drain Diode Forward Voltage 1.2 V IS trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, ISD = 12 A VDD = 400 V, ISD = 12 A, dIF/dt = 100 A/s 345 ns 5.7 C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 FCMT125N65S3 TYPICAL PERFORMANCE CHARACTERISTICS 100 VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 ID, Drain Current[A] ID, Drain Current[A] 100 1 1. VDS = 20 V 2. 250 s Pulse Test 1505C 10 255C 1. 250 s Pulse Test 2. TC = 25°C 0.1 0.1 1 10 VDS, Drain−Source Voltage[V] −555C 1 20 3 Figure 1. On-Region Characteristics 100 0.15 VGS = 10 V VGS = 20 V 0.05 0.00 0 10 20 30 40 50 9 1. VGS = 0 V 2. 250 s Pulse Test 10 1505C 1 255C 0.1 −555C 0.01 0.001 0.1 60 0.5 1.0 1.5 ID, Drain Current [A] VSD, Body Diode Forward Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 200000 100000 Capacitances [pF] IS, Reverse Drain Current [A] TC = 25°C 0.10 5 6 7 8 VGS, Gate−Source Voltage[V] Figure 2. Transfer Characteristics 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10000 VGS, Gate−Source Voltage [V] RDS(ON), Drain−Source On−Resistance [] 0.20 4 Ciss 1000 Coss 100 Crss 10 1. VGS = 0 V 2. f = 1 MHz 1 0.1 1 10 100 VDS = 130 V 8 VDS = 400 V 6 4 2 0 1000 ID = 12 A VDS, Drain−Source Voltage [V] Figure 5. Capacitance Characteristics 0 10 20 30 40 Qg, Total Gate Charge [nC] 50 Figure 6. Gate Charge Characteristics www.onsemi.com 4 FCMT125N65S3 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 2.5 1. VGS = 0 V 2. ID = 10 mA RDS(on), [Normalized] Drain−Source On−Resistance BVDSS, [Normalized] Drain−Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 −100 −50 0 50 100 150 2.0 1.5 1.0 0.5 0.0 200 1. VGS = 10 V 2. ID = 12 A −50 0 50 100 150 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variant vs. Temperature 25 100 30 s ID, Drain Current [A] ID, Drain Current [A] 20 100 s 10 1 ms Operation in This Area is Limited by R DS(on) 1 10 ms DC 1. TC = 25°C 2. TJ = 150°C 3. Single Pulse 0.1 1 15 10 5 10 100 0 25 1000 EOSS [ J] 8 6 4 2 130 260 390 520 100 125 Figure 10. Maximum Drain Current vs. Case Temperature 10 0 75 TC, Case Temperature [ C] Figure 9. Maximum Safe Operation Area 0 50 o VDS, Drain−Source Voltage [V] 650 VDS, Drain to Source Voltage [V] Figure 11. EOSS vs. Drain to Source Voltage www.onsemi.com 5 150 FCMT125N65S3 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 2 1 0.1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 0.001 −5 10 ZJC(t) = r(t) x RJC RJC = 0.69 oC/W Peak TJ = PDM x ZJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE −4 10 −3 −2 10 10 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Transient Thermal Response Curve www.onsemi.com 6 −1 10 0 10 FCMT125N65S3 VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% td(off) tr ton tf toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time FCMT125N65S3 + DUT VDS − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 8 VDD FCMT125N65S3 PACKAGE DIMENSIONS PQFN4 8X8, 2P CASE 483AP ISSUE O www.onsemi.com 9 FCMT125N65S3 SUPERFET is a registered trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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