FDD86581-F085

FDD86581-F085 N-Channel PowerTrench® MOSFET FDD86581-F085 N-Channel PowerTrench® MOSFET 60 V, 25 A, 15 mΩ Features „ Typical RDS(on) = 12.3 mΩ at VGS = 10V, ID = 25 A „ Typical Qg(tot) = 12.6 nC at VGS = 10V, ID = 25 A D „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 D G Applications „ Automotive Engine Control G S „ Powertrain Management D-PAK TO-252 (TO-252) „ Solenoid and Motor Drivers S „ Electronic Steering „ Integrated Starter/Alternator „ Distributed Power Architectures and VRM „ Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol Drain-to-Source Voltage VDSS VGS ID EAS PD Parameter Ratings 60 Units V ±20 V Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 25 Pulsed Drain Current TC = 25°C See Figure 4 Single Pulse Avalanche Energy (Note 2) A 14.5 mJ Power Dissipation 48.4 W Derate Above 25oC 0.32 W/oC TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance, Junction to Case RθJA Maximum Thermal Resistance, Junction to Ambient o -55 to + 175 (Note 3) C 3.1 o C/W 52 o C/W Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 60μH, IAS = 22A, VDD = 60V during inductor charging and VDD = 0V during time in avalanche. 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. Package Marking and Ordering Information Device Marking FDD86581 Device FDD86581-F085 ©2016 Semiconductor Components Industries, LLC. August-2017,Rev.2 Package D-PAK(TO-252) Reel Size 13” Tape Width 16mm Quantity 2500units Publication Order Number: FDD86581-F085/D Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current ID = 250μA, VGS = 0V VDS = 60V, VGS = 0V 60 - - V - - 1 μA - - 1 mA - - ±100 nA 2.0 2.8 4.0 V - 12.3 15 mΩ - 24.4 30 mΩ TJ = 25oC TJ = 175oC (Note 4) VGS = ±20V On Characteristics VGS(th) RDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250μA ID = 25A, VGS= 10V TJ = 25oC TJ = 175oC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VGS = 0.5V, f = 1MHz Qg(ToT) Total Gate Charge VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V - 1.7 - nC Qgs Gate-to-Source Gate Charge - 4.3 - nC Qgd Gate-to-Drain “Miller“ Charge - 2.8 - nC ns VDS = 30V, VGS = 0V, f = 1MHz VDD = 30V ID = 25A - 880 - pF - 280 - pF - 15 - pF - 3.1 - Ω - 12.6 19 nC Switching Characteristics ton Turn-On Time - - 21 td(on) Turn-On Delay - 7.5 - ns tr Rise Time - 6.5 - ns td(off) Turn-Off Delay - 14.6 - ns tf Fall Time - 4.2 - ns toff Turn-Off Time - - 28 ns V VDD = 30V, ID = 25A, VGS = 10V, RGEN = 6Ω Drain-Source Diode Characteristics VSD Source-to-Drain Diode Voltage trr Reverse-Recovery Time Qrr Reverse-Recovery Charge ISD = 25A, VGS = 0V - 0.92 1.3 ISD = 12.5A, VGS = 0V - 0.85 1.2 V VDD = 48V, IF = 25A, dISD/dt = 100A/μs - 35 52 ns - 21 32 nC Note: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. www.onsemi.com 2 FDD86581-F085 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted. Figure 1. Normalized Power Dissipation vs. Case Temperature Figure 2. Maximum Continuous Drain Current vs. Case Temperature PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC Figure 3. Normalized Maximum Transient Thermal Impedance TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150 Figure 4. Peak Current Capability www.onsemi.com 3 FDD86581-F085 N-Channel PowerTrench® MOSFET Typical Characteristics If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] Figure 5. Forward Bias Safe Operating Area NOTE: Refer to ON Semiconductor Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching Capability Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics Figure 9. Saturation Characteristics Figure 10. Saturation Characteristics www.onsemi.com 4 FDD86581-F085 N-Channel PowerTrench® MOSFET Typical Characteristics Figure 11. RDSON vs. Gate Voltage Figure 12. Normalized RDSON vs. Junction Temperature Figure 13. Normalized Gate Threshold Voltage vs. Temperature Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature Figure 15. Capacitance vs. Drain to Source Voltage Figure 16. Gate Charge vs. Gate to Source Voltage www.onsemi.com 5 FDD86581-F085 N-Channel PowerTrench® MOSFET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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