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FDPC3D5N025X9D
PowerTrench® Power Clip
25V Symmetric Dual N-Channel MOSFET
Features
General Description
Q1: N-Channel
This device includes two specialized N-Channel MOSFETs in a
Max rDS(on) = 3.01 mΩ at VGS = 10 V, ID = 18 A
dual package. The switch node has been internally connected to
Max rDS(on) = 3.67 mΩ at VGS = 4.5 V, ID = 16 A
enable easy placement and routing of synchronous buck
converters. The control MOSFET (Q2) and synchronous
Q2: N-Channel
(Q1) have been designed to provide optimal power efficiency.
Max rDS(on) = 3.01 mΩ at VGS = 10 V, ID = 18 A
Applications
Max rDS(on) = 3.67 mΩ at VGS = 4.5 V, ID = 16 A
Computing
Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses
Communications
General Purpose Point of Load
MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing
RoHS Compliant
PIN1
GND
GND
LSG
V+
PIN1
V+
Bottom
Top
V+
SW
GND
SW
SW
LSG
SW
SW
V+
SW
HSG
V+
HSG
Power Clip 33 Symmetric
Pin
Name
Description
Pin
Name
Description
1,11,12
GND(LSS)
Low Side Source
3,4,5,6
V+(HSD)
High Side Drain
2
LSG
Low Side Gate
7
HSG
High Side Gate
Pin
8,9,10
Name
Description
Switching Node,
Low Side Drain
SW
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current
ID
EAS
PD
TJ, TSTG
-Continuous
TC = 25 °C
(Note5)
(Note5)
-Continuous
TC = 100 °C
-Continuous
TA = 25 °C
-Pulsed
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
TC = 25 °C
Power Dissipation for Single Operation
TA = 25 °C
Q1
25
Q2
25
Units
V
±12
±12
V
74
74
47
47
18Note1a
18Note1b
(Note 4)
349
349
(Note 3)
96
96
26
26
1.8Note1a
1.8Note1b
Operating and Storage Junction Temperature Range
-55 to +150
A
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
RθJA
4.8
70Note1b
Note1c
Thermal Resistance, Junction to Ambient
©2016 Fairchild Semiconductor Corporation
FDPC3D5N025X9D Rev.1.0
4.8
70Note1a
135
1
135
°C/W
Note1d
www.fairchildsemi.com
FDPC3D5N025X9D PowerTrench® Power Clip
October 2016
Device Marking
FDPCN025X9D
Device
FDPC3D5N025X9D
Package
Power Clip 33 Symm
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
Electrical Characteristics TJ = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Type
Min.
25
25
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ID = 250 μA, VGS = 0 V
Q1
Q2
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
ID = 250 μA, referenced to 25 °C
Q1
Q2
IDSS
Zero Gate Voltage Drain Current
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V
Q1
Q2
1
1
μA
μA
IGSS
Gate to Source Leakage Current,
Forward
VGS = 12 V/-8 V, VDS= 0 V
VGS = 12 V/-8 V, VDS= 0 V
Q1
Q2
±100
±100
nA
nA
3.0
3.0
V
V
23
23
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
VGS = VDS, ID = 250 μA
Q1
Q2
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
ID = 250 μA, referenced to 25 °C
Q1
Q2
-4
-4
VGS = 10V, ID = 18 A
VGS = 4.5 V, ID = 16 A
VGS = 10 V, ID = 18 A,TJ =125 °C
Q1
2.0
2.4
2.87
3.01
3.67
4.32
VGS = 10V, ID = 18 A
VGS = 4.5 V, ID = 16 A
VGS = 10 V, ID = 18 A ,TJ =125 °C
Q2
2.5
2.9
3.6
3.01
3.67
4.33
VDS = 5 V, ID = 18 A
VDS = 5 V, ID = 18 A
Q1
Q2
133
124
Q1
Q2
2385
2385
3340
3340
pF
Q1
Q2
612
612
860
860
pF
Q1
Q2
78
78
130
130
pF
0.6
0.6
1.8
1.8
Ω
rDS(on)
gFS
Drain to Source On Resistance
Forward Transconductance
1.0
1.0
1.5
1.5
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
Q1:
VDS = 13 V, VGS = 0 V, f = 1 MHZ
Q2:
VDS = 13 V, VGS = 0 V, f = 1 MHZ
Q1
Q2
0.1
0.1
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qg
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
©2016 Fairchild Semiconductor Corporation
FDPC3D5N025X9D Rev.1.0
Q1:
VDD = 13V, ID = 18 A, RGEN = 6 Ω
Q2:
VDD = 13 V, ID = 18 A, RGEN = 6 Ω
VGS = 0 V to 10 V
Q1
V = 13 V, ID
VGS = 0 V to 4.5 V DD
= 18 A
Q2
VDD = 13 V, ID
= 18 A
2
Q1
Q2
10
10
20
20
ns
Q1
Q2
3
3
10
10
ns
Q1
Q2
29
29
46
46
ns
Q1
Q2
3
3
10
10
ns
Q1
Q2
36
36
51
51
nC
Q1
Q2
17
17
24
24
nC
Q1
Q2
5.3
5.3
nC
Q1
Q2
3.9
3.9
nC
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FDPC3D5N025X9D PowerTrench® Power Clip
Package Marking and Ordering Information
Symbol
Parameter
Test Conditions
Type
Min.
Typ.
Max.
Units
Q1
Q2
0.8
0.8
1.2
1.2
V
Q1
Q2
74
74
A
Q1
Q2
349
349
A
Q1
Q2
35
35
56
56
ns
Q1
Q2
19
19
35
35
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
IS
Diode continuous forward current
VGS = 0 V, IS = 18 A
VGS = 0 V, IS = 18 A
(Note 2)
(Note 2)
TC = 25 °C
IS,Pulse
Diode pulse current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Q1
IF = 18 A, di/dt = 100 A/μs
Q2
IF = 18 A, di/dt = 100 A/μs
Notes:
1.RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθCA is determined by the user's board design.
b. 70 °C/W when mounted on
a 1 in2 pad of 2 oz copper
a. 70 °C/W when mounted on
a 1 in2 pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
d. 135 °C/W when mounted on a
minimum pad of 2 oz copper
c. 135 °C/W when mounted on a
minimum pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Q1 :EAS of 96 mJ is based on starting TJ = 25 oC; N-ch: L = 3 mH, IAS = 8 A, VDD = 25 V, VGS = 10 V. 100% test at L= 0.1 mH, IAS = 26 A.
Q2: EAS of 96 mJ is based on starting TJ = 25 oC; N-ch: L = 3 mH, IAS = 8 A, VDD = 25 V, VGS = 10 V. 100% test at L= 0.1 mH, IAS = 26 A.
4. Pulse Id refers to Figure.11 & Figure. 26 Forward Bias Safe Operation Area.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
©2016 Fairchild Semiconductor Corporation
FDPC3D5N025X9D Rev.1.0
3
www.fairchildsemi.com
FDPC3D5N025X9D PowerTrench® Power Clip
Electrical Characteristics TJ = 25 °C unless otherwise noted.
4
VGS = 10 V
VGS = 4.5 V
75
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
100
VGS = 4 V
VGS = 3.5 V
50
VGS = 3 V
25
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.00
0.25
0.50
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
3
VGS = 3 V
2
VGS = 3.5 V
1
VGS = 4 V
0
0.75
0
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
15
ID = 18 A
VGS = 10 V
1.5
rDS(on), DRAIN TO
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-75
-50
-25
0
25
50
75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
75
Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
1.6
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 18 A
10
5
0
100 125 150
TJ = 125 oC
TJ = 25 oC
2
3
TJ, JUNCTION TEMPERATURE (oC)
4
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On-Resistance vs. Gate to
Source Voltage
100
100
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
50
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
75
VDS = 5 V
50
TJ = 150 oC
TJ = 25 oC
25
TJ = -55 oC
0
VGS = 4.5 V VGS = 10 V
1
2
3
4
10
1
TJ = 150 oC
0.1
TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.0
5
VGS, GATE TO SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
Figure 5. Transfer Characteristics
©2016 Fairchild Semiconductor Corporation
FDPC3D5N025X9D Rev.1.0
VGS = 0 V
4
www.fairchildsemi.com
FDPC3D5N025X9D PowerTrench® Power Clip
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted.
10000
ID = 18 A
Ciss
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 10 V
6
VDD = 13 V
VDD = 15 V
4
2
0
Coss
1000
Crss
100
f = 1 MHz
VGS = 0 V
0
8
16
24
32
10
0.1
40
1
Figure 7. Gate Charge Characteristics
80
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
25
Figure 8. Capacitance vs. Drain
to Source Voltage
50
TJ = 25 oC
10
TJ = 100 oC
TJ = 125 oC
60
VGS = 10 V
40
VGS = 4.5 V
20
o
RθJC = 4.8 C/W
1
0.001
0.01
0.1
1
10
0
25
100
50
150
P(PK), PEAK TRANSIENT POWER (W)
10000
100
10 μs
SINGLE PULSE
RθJC = 4.8 oC/W
TC = 25 oC
1000
10
0.01
0.01
125
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
500
0.1
100
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
1
75
o
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
100 μs
1 ms
THIS AREA IS
LIMITED BY rDS(on)
10 ms
100 ms
SINGLE PULSE
TJ = MAX RATED
RθJC = 4.8 oC/W
TC = 25 oC
CURVE BENT TO
MEASURED DATA
0.1
1
10
100
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2016 Fairchild Semiconductor Corporation
FDPC3D5N025X9D Rev.1.0
100
Figure 12. Single Pulse Maximum Power
Dissipation
5
www.fairchildsemi.com
FDPC3D5N025X9D PowerTrench® Power Clip
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
ZθJC(t) = r(t) x RθJC
RθJC = 4.8 oC/W
Peak TJ = PDM x ZθJC(t) + TC
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
-5
10
-4
-3
10
-2
10
-1
10
10
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
100000
P(PK), PEAK TRANSIENT POWER (W)
SINGLE PULSE
o
10000
RθJA = 135 C/W
o
TA = 25 C
1000
100
10
1
0.1
-6
10
-5
10
-4
10
-3
10
-2
-1
10
10
1
100
10
1000
t, PULSE WIDTH (sec)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
Figure 14. Single Pulse Maximum Power Dissipation
2
1
-1
10
-2
10
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
-3
10
NOTES:
ZθJA(t) = r(t) x RθJA
RθJA = 135oC/W
Peak TJ = PDM x ZθJA(t) + TA
Duty Cycle, D = t1 / t2
-4
10
SINGLE PULSE
-5
10 -6
10
-5
10
-4
10
-3
10
-2
-1
10
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 15. Junction-to-Ambient Transient Thermal Response Curve
©2016 Fairchild Semiconductor Corporation
FDPC3D5N025X9D Rev.1.0
6
www.fairchildsemi.com
FDPC3D5N025X9D PowerTrench® Power Clip
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted.
4
VGS = 10 V
VGS = 4.5 V
75
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
100
VGS = 4 V
VGS = 3.5 V
50
VGS = 3 V
25
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.00
0.25
0.50
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
3
VGS = 3 V
2
VGS = 3.5 V
1
VGS = 4 V
0
0.75
0
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
15
ID = 18 A
VGS = 10 V
1.5
rDS(on), DRAIN TO
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-75
-50
-25
0
25
50
75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
75
Figure 17. Normalized on-Resistance vs. Drain
Current and Gate Voltage
1.6
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 18 A
10
5
0
100 125 150
TJ = 125 oC
TJ = 25 oC
2
3
TJ, JUNCTION TEMPERATURE (oC)
4
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 19. On-Resistance vs. Gate to
Source Voltage
Figure 18. Normalized On-Resistance
vs. Junction Temperature
100
IS, REVERSE DRAIN CURRENT (A)
100
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
50
ID, DRAIN CURRENT (A)
Figure 16. On- Region Characteristics
75
VDS = 5 V
50
TJ = 150
oC
TJ = 25 oC
25
TJ = -55 oC
0
VGS = 4.5 V VGS = 10 V
1
2
3
4
VGS = 0 V
10
1
TJ = 150 oC
0.1
TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.0
5
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 20. Transfer Characteristics
Figure 21. Source to Drain Diode
Forward Voltage vs. Source Current
©2016 Fairchild Semiconductor Corporation
FDPC3D5N025X9D Rev.1.0
7
1.2
www.fairchildsemi.com
FDPC3D5N025X9D PowerTrench® Power Clip
Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted.
10000
ID = 18 A
Ciss
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 10 V
6
VDD = 13 V
VDD = 15 V
4
Coss
1000
Crss
100
2
0
f = 1 MHz
VGS = 0 V
0
8
16
24
32
10
0.1
40
25
80
ID, DRAIN CURRENT (A)
50
TJ = 25 oC
10
TJ = 100 oC
TJ = 125 oC
60
VGS = 10 V
40
VGS = 4.5 V
20
o
RθJC = 4.8 C/W
1
0.001
0.01
0.1
1
10
0
25
100
50
150
P(PK), PEAK TRANSIENT POWER (W)
10000
100
10 μs
SINGLE PULSE
RθJC = 4.8 oC/W
TC = 25 oC
1000
10
0.01
0.01
125
Figure 25. Maximum Continuous Drain
Current vs. Case Temperature
500
0.1
100
TC, CASE TEMPERATURE ( C)
Figure 24. Unclamped Inductive
Switching Capability
1
75
o
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
10
Figure 23. Capacitance vs. Drain
to Source Voltage
Figure 22. Gate Charge Characteristics
IAS, AVALANCHE CURRENT (A)
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
100 μs
1 ms
THIS AREA IS
LIMITED BY rDS(on)
10 ms
100 ms
SINGLE PULSE
TJ = MAX RATED
RθJC = 4.8 oC/W
TC = 25 oC
0.1
CURVE BENT TO
MEASURED DATA
1
10
100
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 26. Forward Bias Safe
Operating Area
©2016 Fairchild Semiconductor Corporation
FDPC3D5N025X9D Rev.1.0
100
Figure 27. Single Pulse Maximum Power
Dissipation
8
www.fairchildsemi.com
FDPC3D5N025X9D PowerTrench® Power Clip
Typical Characteristics (Q2 N-Channel) TJ = 25°C unless otherwise noted.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
NOTES:
0.01
ZθJC(t) = r(t) x RθJC
RθJC = 4.8 oC/W
Peak TJ = PDM x ZθJC(t) + TC
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
-5
10
-4
-3
10
-2
10
-1
10
10
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 28. Junction-to-Case Transient Thermal Response Curve
100000
P(PK), PEAK TRANSIENT POWER (W)
SINGLE PULSE
o
10000
RθJA = 135 C/W
o
TA = 25 C
1000
100
10
1
0.1
-6
10
-5
-4
10
10
-3
10
-2
-1
10
10
1
100
10
1000
t, PULSE WIDTH (sec)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
Figure 29. Single Pulse Maximum Power Dissipation
2
1
-1
10
-2
10
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
-3
10
NOTES:
ZθJA(t) = r(t) x RθJA
RθJA = 135 oC/W
Peak TJ = PDM x ZθJA(t) + TA
Duty Cycle, D = t1 / t2
-4
10
SINGLE PULSE
-5
10 -6
10
-5
10
-4
10
-3
10
-2
-1
10
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 30. Junction-to-Ambient Transient Thermal Response Curve
©2016 Fairchild Semiconductor Corporation
FDPC3D5N025X9D Rev.1.0
9
www.fairchildsemi.com
FDPC3D5N025X9D PowerTrench® Power Clip
Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted.
A
10
4
7
C.L.
11
3
0.975
1.400
1.800
B
3.30
0.325
0.000
0.325
1.800
1.400
0.10 B
2X
2
1
1.800
6
0.300
1.060
0.725
3.30
C.L.
5
12
6
11
0.000
0.810
1
0.10 A
4
7
2X
8
9 10
0.650
0.420
0.140
0.140
PIN#1
INDICATOR
KEEP OUT AREA
1.060
1.414
1.800
5
12
SCALE: 1:1
SCALE 1:1
C.L.
SEE DETAIL "A"
0.650
0.10 C
0.05
0.00
0.80
0.70
0.05 C
0.25
0.15
SCALE: 1:1
1.350±0.05
0.975
0.325
0.165±0.05
0.000
0.165±0.05
0.325
0.975
1.350±0.05
SCALE: 2:1
1
2
3
0.200±0.05
5
12
0.675±0.05
3.300±0.05 0.000
11
6
0.760±0.05
1.364±0.05
0.540±0.05
10 9 8
7
1.620
3.300±0.05
SCALE: 1:1
SEATING
PLANE
NOTES: UNLESS OTHERWISE SPECIFIED
4
0.540±0.05
(5X)
C
0.320±0.05
A) DRAWING DOES NOT FULLY CONFORM TO
JEDEC REGISTRATION MO-220, VARIATION
WEEC-1
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR
BURRS DOES NOT EXCEED 0.10MM.
D) DRAWING FILE NAME: MKT-PQFN12A_REV1
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