FFSH10120A

Silicon Carbide Schottky Diode 1200 V, 10 A FFSH10120A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. www.onsemi.com 1. Cathode 2. Anode Schottky Diode Features • • • • • • • Max Junction Temperature 175°C Avalanche Rated 100 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 2 TO−247−2LD CASE 340CL MARKING DIAGRAM Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits $Y&Z&3&K FFSH 10120A $Y &Z &3 &K FFSH10120A = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 February, 2020 − Rev. 1 1 Publication Order Number: FFSH10120A/D FFSH10120A ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Value Unit Peak Repetitive Reverse Voltage 1200 V Single Pulse Avalanche Energy (Note 1) 100 mJ Continuous Rectified Forward Current @ TC < 158°C 10 A Symbol VRRM EAS IF IF, Max Continuous Rectified Forward Current @ TC < 135°C 17 Non-Repetitive Peak Forward Surge Current TC = 25°C, 10 ms 850 A TC = 150°C, 10 ms 800 A IF,SM Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 90 A IF,RM Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 35 A Ptot Power Dissipation TC = 25°C 193 W TC = 150°C TJ, TSTG Operating and Storage Temperature Range TO−247 Mounting Torque, M3 Screw 32 W −55 to +175 °C 60 Ncm Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 100 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 20 A, V = 50 V. THERMAL CHARACTERISTICS Symbol RqJC Parameter Thermal Resistance, Junction to Case, Max Value Unit 0.78 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol VF IR QC C Parameter Min Typ Max Unit IF = 10 A, TC = 25°C − 1.45 1.75 V IF = 10 A, TC = 125°C − 1.7 2.0 IF = 10 A, TC = 175°C − 2.0 2.4 VR = 1200 V, TC = 25°C − − 200 VR = 1200 V, TC = 125°C − − 300 VR = 1200 V, TC = 175°C − − 400 Total Capacitive Charge V = 800 V − 62 − nC Total Capacitance VR = 1 V, f = 100 kHz − 612 − pF VR = 400 V, f = 100 kHz − 58 − VR = 800 V, f = 100 kHz − 47 − Forward Voltage Reverse Current Test Condition mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Marking Package Shipping FFSH10120A FFSH10120A TO−247−2LD (Pb-Free / Halogen Free) 30 Units / Tube www.onsemi.com 2 FFSH10120A TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 10 TJ = −55 oC IR, REVERSE CURRENT ( mA) IF, FORWARD CURRENT (A) 20 TJ = 25 oC 15 TJ = 75 oC 10 TJ = 125 oC TJ = 175 oC 5 0 0 1 2 3 1 10 −1 10 −2 10 −3 TJ = 125 oC TJ = 75 oC 4 T J = 25 o C T J = −55 o C 200 400 Figure 1. Forward Characteristics IF, PEAK FORWARD CURRENT (A) IR, REVERSE CURRENT (mA) TJ = −55 oC TJ = 25 oC TJ = 75 oC 0.4 T J = 125 oC 0.2 0.0 1000 TJ = 175 oC 1100 1200 1300 1200 1400 1500 D = 0.1 90 D = 0.2 D = 0.3 60 D = 0.5 30 D = 0.7 0 25 D=1 50 75 100 125 150 175 o T C , CASE TEMPERATURE ( C) Figure 3. Reverse Characteristics Figure 4. Current Derating 80 QC, CAPACITIVE CHARGE (nC) 200 PTOT, POWER DISSIPATION (W) 1000 120 VR, REVERSE VOLTAGE (V) 150 100 50 0 25 800 Figure 2. Reverse Characteristics 1.0 0.6 600 V R, REVERESE VOLTAGE (V) VF , FORWARD CURRENT (V) 0.8 TJ = 175 oC 50 75 100 125 150 60 40 20 0 175 0 200 400 600 800 V R, REVERSE VOLTAGE (V) o TC , CASE TEMPERATURE ( C) Figure 5. Power Derating Figure 6. Capacitive Charge vs. Reverse Voltage www.onsemi.com 3 1000 FFSH10120A TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 30 EC, CAPACITIVE ENERGY (m J) 1000 100 10 0.1 1 10 100 20 10 0 1000 200 0 V R, REVERESE VOLTAGE (V) 2 1 400 600 800 V R , REVERVE VOLTAGE (V) Figure 7. Capacitance vs. Reverse Voltage r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE CAPACITANCE (pF) 5000 Figure 8. Capacitance Stored Energy DUTY CIRCLE−DESCENDING ORDER −1 10 PDM D=0.5 D=0.2 D=0.1 D=0.05 −2 10 t1 t2 D=0.02 D=0.01 −3 10 NOTES: ZqJC (t) = r(t) x RqJC RqJC = 0.78 oC/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE −4 10 −6 10 −5 10 −4 10 −3 10 −2 10 −1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 9. Junction-to-Case Transient Thermal Response Curve www.onsemi.com 4 1 1000 FFSH10120A TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD − t0 t1 Figure 10. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 5 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−2LD CASE 340CL ISSUE A DATE 03 DEC 2019 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13850G TO−247−2LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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