C4D10120H

C4D10120H VRRM Silicon Carbide Schottky Diode Z-Rec Rectifier ® Features • • • • • • • IF (TC=135˚C) =  15 A Q c 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive Temperature Coefficient on VF Increased Creepage/Clearance Distance =   52 nC TO-247-2 PIN 1 Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway CASE PIN 2 Applications • • • • 1200 V Package Benefits • • • • • = Part Number Package Marking C4D10120H TO-247-2 C4D10120 Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters Maximum Ratings (TC=25°C unless otherwise specified) Symbol Parameter Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 1200 V VRSM Surge Peak Reverse Voltage 1300 V VR DC Peak Reverse Voltage 1200 V IF Continuous Forward Current 31.5 15 10 A TC=25˚C TC=135˚C TC=155˚C Note Fig. 3 IFRM Repetitive Peak Forward Surge Current 46 30 A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse IFSM Non-Repetitive Forward Surge Current 67 59 A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse Fig. 8 IF,Max Non-Repetitive Peak Forward Current 750 620 A TC=25˚C, tP=10 ms, Pulse TC=110˚C, tP=10 ms, Pulse Fig. 8 Power Dissipation 153 66 W TC=25˚C TC=110˚C Fig. 4 dV/dt Diode dV/dt ruggedness 200 V/ns VR=0-960V ∫i2dt i2t value 22.5 17.5 A2s -55 to +175 ˚C 1 8.8 Nm lbf-in Ptot TJ , Tstg Operating Junction and Storage Temperature TO-247 Mounting Torque 1 Value C4D10120H Rev. -, 02-2018 TC=25˚C, tP=10 ms TC=110˚C, tP=10 ms M3 Screw 6-32 Screw Electrical Characteristics Symbol Parameter Typ. Max. Unit VF Forward Voltage 1.5 2.2 1.8 3 V IR Reverse Current 30 55 250 350 QC Total Capacitive Charge C EC Test Conditions Note IF = 10 A TJ=25°C IF = 10 A TJ=175°C Fig. 1 μA VR = 1200 V TJ=25°C VR = 1200 V TJ=175°C Fig. 2 52 nC VR = 800 V, IF = 10A di/dt = 200 A/μs TJ = 25°C Fig. 5 Total Capacitance 754 45 38 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz VR = 800 V, TJ = 25˚C, f = 1 MHz Fig. 6 Capacitance Stored Energy 14.5 μJ VR = 800 V Fig. 7 Note:This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance from Junction to Case Typ. Unit Note 0.98 °C/W Fig. 9 Typical Performance 600.00 20 TJ=-55°C T = 25°C TJ= 75°C J T =125°C TJ =175°C J IF (A) IF Forward Current 16 500.00 IR (μA) IR Reverse Current (µA) 18 14 12 10 8 6 4 400.00 300.00 200.00 TJ=-55°C T = 25°C TJ= 75°C J T =125°C TJ =175°C J 100.00 2 0.00 0 0 0.5 1 1.5 2 2.5 VF Forward VF (V)Voltage Figure 1. Forward Characteristics 2 C4D10120H Rev. -, 02-2018 3 3.5 0 500 1000 1500 VR Reverse VR (V)Voltage Figure 2. Reverse Characteristics 2000 Typical Performance 120 70 180 160 100 60 10% 20% 30% 50% 70% DC 140 120 PTot (W) IF(peak) (A) 50 80 Duty Duty Duty Duty Duty 40 60 30 40 100 80 60 20 40 20 10 20 0 0 25 25 50 50 75 75 100 100 125 125 150 150 175 175 25 50 75 TC ˚C 100 125 150 175 TC ˚C Figure 3. Current Derating Figure 4. Power Derating 800 70 700 60 600 50 40 C (pF) Qc (nC) 500 30 400 300 20 200 10 100 0 0 200 400 600 800 1000 VR (V) Figure 5. Recovery Charge vs. Reverse Voltage 3 C4D10120H Rev. -, 02-2018 0 0.1 1 10 100 VR (V) Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance 25 25.0 1000 1000 EC Capacitive Energy (uJ) C 20 20.0 (A) IFSMIFSM (A) E (mJ) 15 15.0 10 10.0 100 100 TJ_initial = 25°C T = 110°C J_initial 5.05 10 10 1E-05 1E-04 1E-03 1E-02 1.E-05 1.E-04 1.E-03 1.E-02 0.00 0 200 400 600 800 1000 0 200 400 600 800 1000 tp(s) tp (s) VR Reverse Voltage (V) VR (V) Junction To Case Impedance,(˚C/W) ZthJC (oC/W) Thermal Resistance Figure 7. Typical Capacitance Stored Energy Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) 1 0.5 0.3 100E-3 0.1 0.05 0.02 10E-3 0.01 SinglePulse 1E-3 1E-6 10E-6 100E-6 1E-3 Time, tp (s) T (Sec) 10E-3 Figure 9. Transient Thermal Impedance 4 C4D10120H Rev. -, 02-2018 100E-3 1 Package Dimensions Package TO-247-2 POS A Inches Millimeters Min Max Min Max .190 .205 4.70 5.31 A1 .087 .102 2.21 2.59 A2 .059 .098 1.50 2.49 1.40 b .039 .055 0.99 b2 .065 .094 1.65 2.39 c .015 .035 0.38 0.89 21.46 D .819 .845 20.80 D1 .515 - 13.08 - D2 .020 .053 0.51 1.35 16.26 E .620 .640 15.49 E1 .530 - 13.46 - E2 .135 .157 3.43 3.99 e .214 ØK .010 L 5.44 0.25 .780 .800 19.81 20.32 L1 - ØP .140 .177 - 4.50 .144 3.56 3.66 ØP1 .278 .291 7.06 7.39 Q .212 .244 5.38 6.20 S W .243 - 6.17 .006 - 0.15 · PIN 1 TECHNOLOGIES, INC. CASE PIN 2 Recommended Solder Pad Layout all units are in inches .4 Part Number Package Marking C4D10120H TO-247-2 C4D10120 TO-247-2 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 C4D10120H Rev. -, 02-2018 Diode Model Diode Model CSD04060 Vf TfT== VTV+T+If*R If*RT T V -3 V VTT==0.965 + (Tj *J*-1.3*10 ) -3) 0.98+(T -1.71*10 -3 RTT==0.096 + (Tj * 1.06*10 ) -4 0.040+(T J* 5.32*10 ) Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C VT RT Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/power/tools-and-support/product-ecology. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • • • Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C4D10120H Rev. -, 02-2018 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power