FGA4060ADF

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FGA4060ADF 600 V, 40 A Field Stop Trench IGBT Features General Description • Maximum Junction Temperature : TJ = 175oC This ADF IGBT series adopted Field Stop Trench 3rd generation IGBT which offer extreme low Vce(sat) and much faster switching characteristics for outstanding efficiency. And this kind of technology is fully optimized to variety PFC (Power Factor Correction) topology ; Single boost, Multi channel interleaved etc with over 20KHz switching performance. TO3P package provide Super Low thermal resistance for much wider SOA for system stability. • Positive Temperaure Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.8 V(Typ.) @ IC = 40 A • 100% of the Parts Tested for ILM(1) • High Input Impedance • Fast Switching • Tighten Parameter Distribution Applications • RoHS Compliant • PFC topology for Home appliance : Single Boost , Multi channel Interleaved etc. C G G C TO-3PN E E Absolute Maximum Ratings T C Symbol VCES VGES = 25°C unless otherwise noted FGA4060ADF Unit Collector to Emitter Voltage Description 600 V Gate to Emitter Voltage  20 V Transient Gate to Emitter Voltage  30 V Collector Current @ TC = 25oC 80 A Collector Current @ TC = 100oC 40 A ILM (1) Pulsed Collector Current @ TC = 25oC ICM (2) Pulsed Collector Current IC IF (3) IFM (2) PD 120 A 120 A Diode Forward Current @ TC = 25oC 3 A Diode Forward Current @ TC = 100oC 1.5 A 6 A Maximum Power Dissipation @ TC = 25oC 238 W Maximum Power Dissipation @ TC = 100oC Pulsed Diode Maximum Forward Current 119 W TJ Operating Junction Temperature -55 to +175 oC Tstg Storage Temperature Range -55 to +175 o TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 C oC Notes: 1. VCC = 400 V, VGE = 15 V, IC =120 A, RG = 120  Inductive Load. 2. Repetitive rating: Pulse width limited by max. junction temperature. 3. The purpose of diode is protection for negative voltage. ©2015 Fairchild Semiconductor Corporation FGA4060ADF Rev. 1.0 1 www.fairchildsemi.com FGA4060ADF — 600 V, 40 A Field Stop Trench IGBT July 2015 Symbol Parameter FGA4060ADF Unit o RJC(IGBT) Thermal Resistance, Junction to Case, Max. 0.63 RJC(Diode) Thermal Resistance, Junction to Case, Max. 5 oC/W C/W RJA Thermal Resistance, Junction to Ambient, Max. 40 oC/W Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Qty per Tube FGA4060ADF FGA4060ADF TO-3PN Tube - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 600 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1 mA BVCES / TJ Temperature Coefficient of Breakdown Voltage IC = 1 mA, Reference to 25oC - 0.6 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA IC = 40 mA, VCE = VGE 4.1 5.6 7.6 V IC = 40 A, VGE = 15 V - 1.8 2.3 V IC = 40 A, VGE = 15 V, TC = 175oC - 2.31 - V - 1525 - pF On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1MHz - 60 - pF - 20 - pF Switching Characteristics td(on) Turn-On Delay Time - 16.8 - ns tr Rise Time - 34.4 - ns td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss VCC = 400 V, IC = 40 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 25oC - 54.4 - ns - 10 - ns - 1.37 - mJ - 0.25 - mJ Ets Total Switching Loss - 1.62 - mJ td(on) Turn-On Delay Time - 16 - ns tr Rise Time - 35.2 - ns td(off) Turn-Off Delay Time - 57.6 - ns tf Fall Time - 12.8 - ns Eon Turn-On Switching Loss - 1.89 - mJ Eoff Turn-Off Switching Loss - 0.47 - mJ Ets Total Switching Loss - 2.36 - mJ ©2015 Fairchild Semiconductor Corporation FGA4060ADF Rev. 1.0 VCC = 400 V, IC = 40 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 175oC 2 www.fairchildsemi.com FGA4060ADF — 600 V, 40 A Field Stop Trench IGBT Thermal Characteristics Symbol Parameter Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge Test Conditions VCE = 400 V, IC = 40 A, VGE = 15 V Electrical Characteristics of the Diode Symbol Parameter VFM Diode Forward Voltage Erec Reverse Recovery Energy trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge ©2015 Fairchild Semiconductor Corporation FGA4060ADF Rev. 1.0 (Continued) Min. Typ. Max Unit - 55.5 - nC - 9.8 - nC - 21 - nC Unit TC = 25°C unless otherwise noted Test Conditions IF = 3 A IF = 3 A, dIF/dt = 200 A/s 3 Min. Typ. Max TC = 25oC - 1.6 2.3 TC = 175oC - 1.4 - TC = 175oC - 29.7 - TC = 25oC - 26 - TC = 175oC - 153 - TC = 25oC - 35 - TC = 175oC - 305 - V uJ ns nC www.fairchildsemi.com FGA4060ADF — 600 V, 40 A Field Stop Trench IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics 120 Figure 2. Typical Output Characteristics 120 20V o TC = 25 C 20V o TC = 175 C 15V Collector Current, IC [A] 12V Collector Current, IC [A] 90 15V 12V 10V 60 VGE = 8V 30 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 90 60 0 0 4 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V o TC = 25 C 90 1 2 3 4 Collector-Emitter Voltage, VCE [V] 5 Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level 120 Collector Current, IC [A] VGE = 8V 30 5 Figure 3. Typical Saturation Voltage Characteristics 10V o TC = 175 C 60 30 Common Emitter VGE = 15V 3 80A 2 40A IC = 20A 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 1 -50 5 Figure 5. Saturation Voltage vs. VGE 20 Common Emitter Common Emitter o o TC = 25 C 16 12 IC = 20A 8 40A 80A 4 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] ©2015 Fairchild Semiconductor Corporation FGA4060ADF Rev. 1.0 150 Figure 6. Saturation Voltage vs. VGE Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 20 0 50 100 o Case Temperature, TC [ C] TC = 175 C 16 12 40A 8 IC = 20A 0 20 4 80A 4 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA4060ADF — 600 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics 10000 15 Common Emitter Gate-Emitter Voltage, VGE [V] o Capacitance [pF] Cies 1000 Coes 100 Common Emitter VGE = 0V, f = 1MHz Cres TC = 25 C 12 300V VCC = 200V 9 400V 6 3 o TC = 25 C 10 1 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 9. Turn-on Characteristics vs. Gate Resistance 10 20 30 40 Gate Charge, Qg [nC] 60 1000 td(on) 10 td(off) Switching Time [ns] tr Common Emitter VCC = 400V, VGE = 15V IC = 40A 100 tf Common Emitter VCC = 400V, VGE = 15V IC = 40A o 10 o TC = 25 C TC = 25 C o o TC = 175 C TC = 175 C 5 50 Figure 10. Turn-off Characteristics vs. Gate Resistance 100 Switching Time [ns] 0 0 10 20 30 40 Gate Resistance, RG [] 4 50 Figure 11. Switching Loss vs. Gate Resistance 0 10 20 30 Gate Resistance, RG [] 40 50 Figure 12. Turn-on Characteristics vs. Collector Current 150 3 100 tr Switching Time [ns] Switching Loss [mJ] Eon 1 Eoff Common Emitter VCC = 400V, VGE = 15V IC = 40A td(on) Common Emitter VGE = 15V, RG = 6 10 o TC = 25 C o TC = 25 C o o TC = 175 C TC = 175 C 0.1 0 10 20 30 40 Gate Resistance, RG [] ©2015 Fairchild Semiconductor Corporation FGA4060ADF Rev. 1.0 5 20 50 30 40 50 60 70 80 Collector Current, IC [A] 5 www.fairchildsemi.com FGA4060ADF — 600 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Collector Current Figure 14. Switching Loss vs. Collector Current 10 100 td(off) Switching Loss [mJ] Switching Time [ns] Eon tf Common Emitter VGE = 15V, RG = 6 10 1 Eoff Common Emitter VGE = 15V, RG = 6 o o TC = 25 C TC = 25 C 0.1 o TC = 175 C o TC = 175 C 4 20 30 40 50 60 Collector Current, IC [A] 70 0.05 20 80 30 40 50 60 70 80 Collector Current, IC [A] Figure 15. Load Current Vs. Frequency Figure 16. SOA Characteristics 200 200 100 Square Wave o 10s VGE = 15/0V, RG = 6 Collector Current, Ic [A] Collector Current, [A] TJ