FGA5065ADF

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FGA5065ADF 650 V, 50 A Field Stop Trench IGBT Features General Description • Maximum Junction Temperature : TJ = 175oC This ADF IGBT series adopted field stop trench 3rd generation IGBT which offer extreme low VCE(sat) and much faster switching characteristics for outstanding efficiency. And this kind of technology is fully optimized to variety PFC (Power Factor Correction) topology; Single Boost, Multi Channel Interleaved etc with over 20KHz switching performance. TO3P package provide super low thermal resistance for much wider SOA for system stability. • Positive Temperaure Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.7 V(Typ.) @ IC = 50 A • 100% of the Parts Tested for ILM(1) • High Input Impedance • Fast Switching • Tighten Parameter Distribution Applications • RoHS Compliant • PFC topology for home applicnce: Single Boost, Multi Channel Interleaved etc. C G G C TO-3PN E Absolute Maximum Ratings Symbol VCES VGES IC FGA5065ADF Unit Collector to Emitter Voltage 650 V Gate to Emitter Voltage  20 V Transient Gate to Emitter Voltage  30 V 100 A 50 A Collector Current @ TC = @ TC = 100oC Pulsed Collector Current Pulsed Collector Current PD 25oC Collector Current ICM (2) IFM (2) TC = 25°C unless otherwise noted Description ILM (1) IF (3) E o @ TC = 25 C 150 A 150 A Diode Forward Current @ TC = 25oC 40 A Diode Forward Current @ TC = 100oC 20 A 120 A Maximum Power Dissipation @ TC = 25oC 268 W Maximum Power Dissipation @ TC = 100oC Pulsed Diode Maximum Forward Current 134 W TJ Operating Junction Temperature -55 to +175 oC Tstg Storage Temperature Range -55 to +175 oC TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 o C Notes: 1. VCC = 400 V, VGE = 15 V, IC =150 A, RG = 55.9  Inductive Load. 2. Repetitive rating: Pulse width limited by max. junction temperature. 3. The purpose of diode is protection for negative voltage. ©2015 Fairchild Semiconductor Corporation FGA5065ADF Rev. 1.0 1 www.fairchildsemi.com FGA5065ADF — 650 V, 50 A Field Stop Trench IGBT August 2015 Symbol Parameter FGA5065ADF Unit RJC(IGBT) Thermal Resistance, Junction to Case, Max. 0.56 o RJC(Diode) Thermal Resistance, Junction to Case, Max. 1.71 oC/W RJA Thermal Resistance, Junction to Ambient, Max. 40 oC/W C/W Package Marking and Ordering Information Part Number Top Mark FGA5065ADF FGA5065ADF Package Packaging Method TO-3PN Parameter Tape Width Quantity - - 30 Tube Electrical Characteristics of the IGBT Symbol Reel Size TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 650 - - V - 0.58 - V/oC Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1 mA BVCES / TJ Temperature Coefficient of Breakdown Voltage ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA IC = 50 mA, VCE = VGE IC = 1 mA, Reference to 25oC On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 4.1 5.6 7.6 V IC = 50 A, VGE = 15 V - 1.7 2.2 V IC = 50 A, VGE = 15 V, TC = 175oC - 2.28 - V - 1995 - pF VCE = 30 V, VGE = 0 V, f = 1MHz - 70 - pF - 23 - pF - 20.8 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time - 41.6 - ns td(off) Turn-Off Delay Time - 62.4 - ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 309 - uJ Ets Total Switching Loss - 1659 - uJ td(on) Turn-On Delay Time - 19.2 - ns tr Rise Time - 38.4 - ns td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Ets Total Switching Loss ©2015 Fairchild Semiconductor Corporation FGA5065ADF Rev. 1.0 VCC = 400 V, IC = 50 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 25oC VCC = 400 V, IC = 50 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 175oC 2 - 11.2 - ns - 1350 - uJ - 67.2 - ns - 12.8 - ns - 1820 - uJ - 558 - uJ - 2378 - uJ www.fairchildsemi.com FGA5065ADF — 650 V, 50 A Field Stop Trench IGBT Thermal Characteristics Symbol Parameter Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge Test Conditions VCE = 400 V, IC = 50 A, VGE = 15 V Electrical Characteristics of the Diode Symbol Parameter VFM Diode Forward Voltage Erec Reverse Recovery Energy trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge ©2015 Fairchild Semiconductor Corporation FGA5065ADF Rev. 1.0 (Continued) Min. Typ. Max Unit - 72.2 - nC - 13.5 - nC - 28.5 - nC Unit TC = 25°C unless otherwise noted Test Conditions IF = 20 A IF =20 A, dIF/dt = 200 A/s 3 Min. Typ. Max TC = 25oC - 2.1 2.6 TC = 175oC - 1.94 - TC = 175oC - 50 - TC = 25oC - 31.8 - TC = 175oC - 192 - TC = 25oC - 50.6 - TC = 175oC - 699 - V uJ ns nC www.fairchildsemi.com FGA5065ADF — 650 V, 50 A Field Stop Trench IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics 120 Collector Current, IC [A] 120 20V 15V 12V o TC = 25 C 60 VGE = 8V 30 0 20V 1 2 3 4 Collector-Emitter Voltage, VCE [V] Figure 3. Typical Saturation Voltage Characteristics 12V 90 60 VGE = 8V 30 0 5 10V 15V 10V 90 0 o TC = 175 C Collector Current, IC [A] 150 Figure 2. Typical Output Characteristics 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 5 Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level 150 Collector Current, IC [A] Common Emitter VGE = 15V 120 o TC = 25 C o TC = 175 C 90 60 30 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 5 Figure 5. Saturation Voltage vs. VGE 20 20 o o TC = 25 C 16 12 IC = 25A 8 50A 100A 4 0 Common Emitter Common Emitter Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 6. Saturation Voltage vs. VGE TC = 175 C 16 12 50A 8 IC = 25A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] ©2015 Fairchild Semiconductor Corporation FGA5065ADF Rev. 1.0 20 4 100A 4 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA5065ADF — 650 V, 50 A Field Stop Trench IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics 15 10000 Common Emitter Gate-Emitter Voltage, VGE [V] o Capacitance [pF] Cies 1000 Coes 100 Common Emitter VGE = 0V, f = 1MHz Cres TC = 25 C 12 300V VCC = 200V 400V 9 6 3 o TC = 25 C 10 0 1 10 Collector-Emitter Voltage, VCE [V] 30 Figure 9. Turn-on Characteristics vs. Gate Resistance 20 40 60 Gate Charge, Qg [nC] 80 Figure 10. Turn-off Characteristics vs. Gate Resistance 1000 Switching Time [ns] 100 Switching Time [ns] tr td(on) Common Emitter VCC = 400V, VGE = 15V IC = 50A 10 td(off) 100 tf Common Emitter VCC = 400V, VGE = 15V IC = 50A o 10 o TC = 25 C 8 0 TC = 25 C o TC = 175 C o TC = 175 C 0 10 20 30 40 Gate Resistance, RG [] 4 50 Figure 11. Switching Loss vs. Gate Resistance 0 10 20 30 Gate Resistance, RG [] 40 50 Figure 12. Turn-on Characteristics vs. Collector Current 500 4 Common Emitter VGE = 15V, RG = 6 o TC = 25 C Switching Time [ns] Switching Loss [mJ] Eon 1 Eoff Common Emitter VCC = 400V, VGE = 15V IC = 50A o TC = 175 C tr 100 td(on) o TC = 25 C o TC = 175 C 0.1 0 10 20 30 40 Gate Resistance, RG [] ©2015 Fairchild Semiconductor Corporation FGA5065ADF Rev. 1.0 10 50 0 30 60 90 120 150 Collector Current, IC [A] 5 www.fairchildsemi.com FGA5065ADF — 650 V, 50 A Field Stop Trench IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Collector Current Figure 14. Switching Loss vs. Collector Current 10 200 td(off) Switching Loss [mJ] Switching Time [ns] 100 tf Common Emitter VGE = 15V, RG = 6 10 Eon 1 Common Emitter VGE = 15V, RG = 6 Eoff o o TC = 25 C TC = 25 C o o TC = 175 C TC = 175 C 4 0 30 0.1 60 90 120 Collector Current, IC [A] 0 150 30 60 90 120 Figure 15. Load Current Vs. Frequency Figure 16. SOA Characteristics 200 250 Square Wave 100 10s TJ