FGH15T120SMD-F155

1200 V， 15 A 场截止沟道 IGBT 概述 通过采用创新的场截止沟道 IGBT 技术，飞兆半导体新型系列的 场截止沟道 IGBT 可为光伏逆变器、 UPS、焊机和 PFC 等硬开 关应用提供最佳性能。 特性 • FS 沟道技术，正温度系数 • 高速开关 • 低饱和电压：VCE(sat) =1.8 V @ IC=15 A 应用 • ILM(1) 部件 100% 检测 • 光伏逆变器、焊机、 UPS 和 PFC 应用 • 高输入阻抗 • 符合 RoHS 标准 E C C G G 集电极 (FLANGE) E 绝对最大额定值 T =25°C 除非另有说明 C 符号 额定值 单位 集电极 - 发射极之间电压 1200 V VGES 栅极－发射极间电压 ±25 V ±30 V IC 集电极电流 @ TC=25°C 30 A 集电极电流 @ TC=100°C 15 A ILM (1) 箝位感性负载电流 @ TC=25°C ICM (2) 集电极脉冲电流 IF 二极管正向连续电流 二极管正向连续电流 VCES 说明 瞬态栅极－发射极间电压 60 A 60 A @ TC=25°C 30 A @ TC=100°C 15 A IFM 二极管最大正向电流 100 A PD 最大功耗 @ TC=25°C 333 W 最大功耗 @ TC=100°C 167 W TJ 工作结温 -55 至 +175 °C Tstg 存储温度范围 -55 至 +175 °C TL 用于焊接的最大引脚温度，距离外壳 1/8"，持续 5 秒 300 °C 热性能 符号 典型值 最大值 单位 结点 - 壳体的热阻 -- 0.45 °C/W RθJC（二极管） 结点 - 壳体的热阻 -- 2.0 °C/W RθJA -- 40 °C/W RθJC(IGBT) 参数 结至环境热阻 注意： 1. Vcc=600 V， VGE=15 V， IC=60 A， RG=34 Ω， 感性负载 2. 受限于 Tjmax ©2013 飞兆半导体公司 December-2017, 修订版 3 Publication Order Number: FGH15T120SMDCN/D FGH15T120SMD — 1200 V、 15 A 场截止沟道 IGBT FGH15T120SMD 器件标识 器件 封装 卷尺寸 带宽 数量 FGH15T120SMD FGH15T120SMD-F155 TO-247G03 - - 30 IGBT 的电气特性 T =25°C 除非另有说明 C 符号 参数 测试条件 最小值 典型值 最大值 单位 关断特性 BVCES 集电极 - 发射极击穿电压 VGE=0 V, IC=250 μA ICES 集电极切断电流 VCE=VCES， VGE=0 V - IGES G-E 漏电流 VGE=VGES， VCE=0 V - G-E 阈值电压 IC=15 mA， VCE=VGE 4.9 IC =15 A， VGE=15 V TC=25°C IC =15 A, VGE=15 V, TC=175°C 1200 - - V - 250 μA - ±400 nA 6.2 7.5 V - 1.8 2.4 V - 1.9 - V - 1460 - pF - 65 - pF 反向传输电容 - 37 - pF 导通特性 VGE(th) VCE(sat) 集电极 - 发射极间饱和电压 动态特性 Cies 输入电容 Coes 输出电容 Cres VCE =30 V， VGE=0 V， f=1 MHz 开关特性 导通延迟时间 - 32 - ns tr 上升时间 - 47 - ns td(off) 关断延迟时间 - 490 - ns - 12 - ns - 1.15 - mJ - 0.46 - mJ td(on) tf 下降时间 Eon 导通开关损耗 Eoff 关断开关损耗 Ets VCC=600 V， IC=15 A， RG=34 Ω， VGE = 15 V， 感性负载， TC =25°C 总开关损耗 - 1.61 - mJ td(on) 导通延迟时间 - 32 - ns tr 上升时间 - 42 - ns td(off) 关断延迟时间 - 510 - ns tf 下降时间 Eon 导通开关损耗 Eoff VCC=600 V， IC=15 A， RG=34 Ω， VGE = 15 V， 感性负载， TC =175°C - 24 - ns - 1.86 - mJ 关断开关损耗 - 0.70 - mJ Ets 总开关损耗 - 2.56 - mJ Qg 总栅极电荷 Qge 栅极－发射极间电荷 Qgc 栅极－发射极间电荷 VCE=600 V， IC=15 A， VGE=15 V www.onsemi.com 2 - 128 - nC - 11 - nC - 70 - nC FGH15T120SMD — 1200 V、 15 A 场截止沟道 IGBT 封装标识与定购信息 C 符号 VFM 参数 二极管正向电压 trr 二极管反向恢复时间 Irr 二极管反向恢复峰值电流 Qrr 二极管反向恢复电荷 Erec 反向恢复电能 测试条件 最小值 典型值 最大值 单位 IF =15 A, TC=25°C - 2.8 3.7 IF =15 A, TC=175°C - 2.3 - V VR=600 V， IF=15 A， diF/dt=200 A/μs， TC =25°C - 72 - ns VR=600 V， IF=15 A， diF/dt=200 A/μs， TC =175°C V - 7.4 - A - 270 - nC - 120 - μJ - 183 - ns trr 二极管反向恢复时间 Irr 二极管反向恢复峰值电流 - 12 - A 二极管反向恢复电荷 - 1085 - nC Qrr www.onsemi.com 3 FGH15T120SMD — 1200 V、 15 A 场截止沟道 IGBT 二极管电气特性 T =25°C 除非另有说明 图 1. 典型输出特性 图 2. 典型输出特性 60 60 o o TC = 175 C 48 20V 15V 20V 12V 36 10V 24 12 2.0 4.0 6.0 8.0 Collector-Emitter Voltage, VCE [V] 24 VGE = 8V 12 0 0.0 2.0 4.0 6.0 8.0 Collector-Emitter Voltage, VCE [V] 3.0 o 48 TC = 25 C Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V -------- o TC = 175 C 36 24 12 0 0.0 1.0 2.0 3.0 4.0 Collector-Emitter Voltage, VCE [V] 5.0 图 5. 饱和电压与 VGE 的关系 Common Emitter VGE = 15 V 30 A 2.5 2.0 15 A IC = 8 A 1.5 1.0 25 50 75 100 125 150 o Case Temperature, TC [ C] 175 图 6. 饱和电压与 VGE 的关系 20 20 Common Emitter Common Emitter o o Collector-Emitter Voltage, VCE [V] TC = 25 C 15 15A 10 IC=8A 30A 5 0 10.0 图 4. 饱和电压与壳温的关系 （在可变电流强度下） 60 Collector Current, IC [A] 10V 10.0 图 3. 典型饱和电压特性 Collector-Emitter Voltage, VCE [V] 36 VGE = 8V 0 0.0 12V 15V 48 Collector Current, IC [A] Collector Current, IC [A] TC = 25 C TC = 175 C 16 15A 12 IC=8A 30A 8 4 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.onsemi.com 4 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 FGH15T120SMD — 1200 V、 15 A 场截止沟道 IGBT 典型性能特征 图 7. 电容特性 图 8. 栅极电荷特性 15 10000 Common Emitter Gate-Emitter Voltage, VGE [V] o Capacitance [pF] Cies 1000 Coes 100 Common Emitter VGE = 0V, f = 1MHz Cres TC = 25 C 12 400V VCC = 200V 9 600V 6 3 o TC = 25 C 0 20 1 10 Collector-Emitter Voltage, VCE [V] 0 30 图 9. 导通特性与栅极电阻的关系 26 52 78 Gate Charge, Qg [nC] 104 130 图 10. 关断特性与栅极电阻的关系 10000 Common Emitter VCC = 600V, VGE = 15V IC = 15A 100 1000 td(off) o Switching Time [ns] Switching Time [ns] TC = 25 C o TC = 175 C tr td(on) 100 tf 10 Common Emitter VCC = 600V, VGE = 15V IC = 15A 1 o TC = 25 C o TC = 175 C 10 0 14 28 42 Gate Resistance, RG [Ω] 56 0.1 70 图 11. 开关损耗与栅极电阻的关系 28 42 Gate Resistance, RG [Ω] 56 70 24 30 300 10 Common Emitter VCC = 600V, VGE = 15V Common Emitter VGE = 15V, RG = 34Ω IC = 15A TC = 25 C o o o TC = 25 C o TC = 175 C Switching Time [ns] Switching Loss [mJ] 14 图 12. 导通特性与集电极电流的关系 20 Eon 1 Eoff 0.1 0 TC = 175 C 100 tr td(on) 10 0 14 28 42 56 Gate Resistance, RG [Ω] 70 0 6 12 18 Collector Current, IC [A] www.onsemi.com 5 FGH15T120SMD — 1200 V、 15 A 场截止沟道 IGBT 典型性能特征 图 13. 关断特性与集电极电流的关系 图 14. 开关损耗与集电极电流的关系 10 1000 Common Emitter VGE = 15V, RG = 34Ω o TC = 25 C 100 tf 10 Common Emitter VGE = 15V, RG = 34Ω Eon o Switching Loss [mJ] Switching Time [ns] td(off) TC = 175 C 1 Eoff o TC = 25 C o TC = 175 C 0.1 1 0 6 12 18 24 Collector Current, IC [A] 0 30 图 15. 负载电流与频率的关系 6 12 18 Collector Current, IC [A] 24 图 16. SOA 特性 200 100 150 VCE = 600V ICMAX(Pulse) 10μs Collector Current, Ic [A] Collector Current, IC [A] Load current : peak of square Wave Duty cycle : 50% 100 o Tc= 100 C Power Dissipation =167 W 50 o TC = 100 C 0 1k 30 10 ICMAX(Continuous) 100μs DC Operation 1 1ms 10ms Single Nonrepetitive o Pulse TC = 25 C Curves must be derated linearly with increase in temperature 0.1 0.01 10k 100k Switching Frequency, f [Hz] 1 1M 图 17. 正向特性 10 100 Collector-Emitter Voltage, VCE [V] 1000 图 18. 反向恢复电流 20 300 Reverse Recovery Current, Irr [A] o 100 Forward Current, IF [A] o TC = 175 C 10 o TC = 25 C 1 TC = 25 C o TC = 175 C 15 diF/dt = 200A/μs 10 diF/dt = 100A/μs diF/dt = 200A/μs 5 diF/dt = 100A/μs 0 0.1 0 1 2 3 4 Forward Voltage, VF [V] 5 www.onsemi.com 6 5 10 15 20 Forward Current, IF [A] 25 30 FGH15T120SMD — 1200 V、 15 A 场截止沟道 IGBT 典型性能特征 图 19. 反向恢复时间 图 20. 存储电荷 300 1.4 o o Stored Recovery Charge, Qrr [uC] o TC = 175 C 250 diF/dt = 100A/μs 200 diF/dt = 200A/μs 150 100 diF/dt = 100A/μs 50 10 15 20 Forward Current, IF [A] o TC = 175 C diF/dt = 200A/μs 1.0 diF/dt = 100A/μs 0.8 0.6 0.4 diF/dt = 200A/μs 0.2 0.0 25 30 5 10 15 20 Forwad Current, IF [A] 图 21. IGBT 瞬态热阻抗 0.5 Thermal Response [Zthjc] 5 TC = 25 C 1.2 diF/dt = 100A/μs diF/dt = 200A/μs 0.5 0.1 0.3 0.1 0.05 0.02 0.01 single pulse 0.01 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] 图 22. 二极管瞬态热阻抗 3 Thermal Response [Zthjc] Reverse Recovery Time, trr [ns] TC = 25 C 0.5 1 0.3 0.1 0.05 0.1 PDM 0.02 0.01 t1 0.01 -5 10 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse -4 10 -3 10 -2 10 Rectangular Pulse Duration [sec] www.onsemi.com 7 -1 10 0 10 25 30 FGH15T120SMD — 1200 V、 15 A 场截止沟道 IGBT 典型性能特征 FGH15T120SMD — 1200 V、 15 A 场截止沟道 IGBT 机械尺寸 图 23. TO-247，模塑， 3 引脚， JEDEC 变体 AB （有效） 封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 / 或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆公司 产品保修的部分。 尺寸单位为毫米 www.onsemi.com 8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ❖ © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com