UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast
Diode
60 A, 600 V
HGTG30N60B3D
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The HGTG30N60B3D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a MOSFET
and the low on−state conduction loss of a bipolar transistor. The much
lower on−state voltage drop varies only moderately between 25°C and
150°C. The IGBT used is the development type TA49170. The diode
used in anti−parallel with the IGBT is the development type TA49053.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power supplies and
drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49172.
C
G
E
EC
G
Features
•
•
•
•
•
•
•
60 A, 600 V, TC = 25°C
600 V Switching SOA Capability
Typical Fall Time 90 ns at TJ = 150°C
Short Circuit Rating
Low Conduction Loss
Hyperfast Anti−Parallel Diode
This is a Pb−Free Device
TO−247−3LD SHORT LEAD
CASE 340CK
JEDEC STYLE
MARKING DIAGRAM
$Y&Z&3&K
G30N60B3D
$Y
&Z
&3
&K
G30N60B3D
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
© Semiconductor Components Industries, LLC, 2004
April, 2020 − Rev. 2
1
Publication Order Number:
HGTG30N60B3D/D
HGTG30N60B3D
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
Parameter
Collector to Emitter Voltage
Collector Current Continuous
At TC = 25°C
At TC = 110°C
Average Diode Forward Current at 110°C
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Symbol
HGTG30N60B3D
Unit
BVCES
600
V
IC25
IC110
60
30
A
A
IEC(AVG)
25
A
ICM
220
A
VGES
±20
V
V
Gate to Emitter Voltage Pulsed
VGEM
±30
Switching Safe Operating Area at TJ = 150°C, (Figure 2)
SSOA
60 A at 600 V
PD
208
W
1.67
W/°C
TJ, TSTG
−55 to 150
°C
Maximum Lead Temperature for Soldering
TL
260
°C
Short Circuit Withstand Time (Note 2) at VGE = 12 V
tSC
4
ms
Short Circuit Withstand Time (Note 2) at VGE = 10 V
tSC
10
ms
Power Dissipation Total at TC = 25°C
Power Dissipation Derating TC > 25°C
Operating and Storage Junction Temperature Range
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360 V, TJ =125°C, RG = 3 W.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
Parameter
Symbol
Collector to Emitter Breakdown Voltage
BVCES
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
ICES
VCE(SAT)
VGE(TH)
IGES
Test Condition
Min
Typ
Max
Unit
600
−
−
V
TJ = 25°C
−
−
250
mA
TJ = 150°C
−
−
3
mA
TJ = 25°C
−
1.45
1.9
V
TJ = 150°C
−
1.7
2.1
V
4.2
5
6
V
IC = 250 mA, VGE = 0 V
VCE = BVCES
IC = IC110, VGE = 15 V
IC = 250 mA, VCE = VGE
VGE = ±20 V
−
−
±250
nA
VCE(PK) = 480 V
200
−
−
A
VCE(PK) = 600 V
60
−
−
A
−
7.2
−
V
VGE = 15 V
−
170
190
nC
VGE = 20 V
−
230
250
nC
−
36
−
ns
−
25
−
ns
−
137
−
ns
−
58
−
ns
−
550
800
mJ
−
680
900
mJ
−
32
−
ns
−
24
−
ns
−
275
320
ns
Switching SOA
SSOA
TJ = 150°C, RG = 3 W,
VGE = 15 V, L = 100 mH,
Gate to Emitter Plateau Voltage
VGEP
IC = IC110, VCE = 0.5 BVCES
On−State Gate Charge
QG(ON)
IC = IC110,
VCE = 0.5 BVCES
Current Turn−On Delay Time
td(ON)I
IGBT and Diode at TJ = 25°C,
ICE = IC110,
VCE = 0.8 BVCES,
VGE = 15 V,
RG = 3 W,
L = 1 mH,
Test Circuit (Figure 19)
Current Rise Time
Current Turn−Off Delay Time
Current Fall Time
trI
td(OFF)I
tfI
Turn−On Energy
EON
Turn−Off Energy (Note 3)
EOFF
Current Turn−On Delay Time
td(ON)I
Current Rise Time
Current Turn−Off Delay Time
trI
td(OFF)I
Current Fall Time
tfI
Turn−On Energy
EON
Turn−Off Energy (Note 3)
EOFF
Diode Forward Voltage
VEC
IGBT and Diode at TJ = 150°C,
ICE = IC110,
VCE = 0.8 BVCES,
VGE = 15 V,
RG = 3 W,
L = 1 mH,
Test Circuit (Figure 19)
IEC = 30 A
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2
−
90
150
ns
−
1300
1550
mJ
−
1600
1900
mJ
−
1.95
2.5
V
HGTG30N60B3D
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) (continued)
Parameter
Symbol
Diode Reverse Recovery Time
Test Condition
trr
Thermal Resistance Junction To Case
RqJC
Min
Typ
Max
Unit
IEC = 1 A, dIEC/dt = 200 A/ms
−
32
40
ns
IEC = 30 A, dIEC/dt = 200 A/ms
−
45
55
ns
IGBT
−
−
0.6
°C/W
Diode
−
−
1.3
°C/W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Turn−Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0 A). All devices were tested per JEDEC Standard No. 24−1 Method for
Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss.
225
60
VGE = 15 V
ICE, COLLECTOR TO EMITTER
CURRENT (A)
50
40
30
20
10
0
25
50
75
100
125
TJ = 150°C, RG = 3 W, VGE = 15 V, L = 100 mH
200
175
150
125
100
75
50
25
0
150
0
TC, CASE TEMPERATURE (°C)
TJ = 150°C, RG = 3 W,
L = 1 mH, VCE = 480 V
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD − PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RqJC = 0.6°C/W, SEE NOTES
TC
75°C
75°C
110°C
110°C
10
1
0.1
5
10
20
200
300
400
500
600
700
Figure 2. MINIMUM SWITCHING SAFE
OPERATING AREA
VGE
15 V
10 V
15 V
10 V
40
20
tSC, SHORT CIRCUIT WITHSTAND
TIME (ms)
fMAX, OPERATING FREQUENCY (kHz)
Figure 1. DC COLLECTOR CURRENT vs.
CASE TEMPERATURE
100
100
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
500
VCE = 360 V, RG = 3 W, TJ = 125°C
18
450
16
400
ISC
14
350
12
300
10
250
tSC
200
8
6
10
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
11
12
13
14
150
15
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 3. OPERATING FREQUENCY vs.
COLLECTOR TO EMITTER CURRENT
Figure 4. SHORT CIRCUIT WITHSTAND TIME
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3
ISC, PEAK SHORT CIRCUIT CURRENT (A)
ICE, DC COLLECTOR CURRENT (A)
TYPICAL PERFORMANCE CURVES (unless otherwise specified)
HGTG30N60B3D
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
350
ICE, COLLECTOR TO EMITTER
CURRENT (A)
ICE, COLLECTOR TO EMITTER
CURRENT (A)
225
200
175
150
TC = −55°C
TC = 150°C
125
TC = 25°C
100
75
50
DUTY CYCLE < 0.5%, VGE = 10 V
PULSE DURATION = 250 ms
25
0
2
4
6
8
DUTY CYCLE < 0.5%, VGE = 15 V
300 PULSE DURATION = 250 ms
250
TC = −55°C
200
TC = 150°C
150
100
TC = 25°C
50
0
10
0
1
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
RG = 3 W, L = 1 mH, VCE = 480 V
5
TJ = 25°C,TJ = 150°C, VGE = 10 V
4
3
2
1
0
10
TJ = 25°C,TJ = 150°C, VGE = 15 V
20
30
40
50
60
4.5
6
7
3.0
TJ = 150°C, VGE = 10 V or 15 V
2.5
2.0
1.5
1.0
0.5
0
TJ = 25°C, VGE = 10 V or 15 V
10
20
30
40
50
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 8. TURN−OFF ENERGY LOSS vs.
COLLECTOR TO EMITTER CURRENT
250
RG = 3 W, L = 1 mH, VCE = 480 V
50
trI, RISE TIME (ns)
td(ON)I, TURN−ON DELAY TIME (ns)
5
3.5
Figure 7. TURN−ON ENERGY LOSS vs.
COLLECTOR TO EMITTER CURRENT
45
TJ = 25°C, TJ = 150°C, VGE = 10 V
40
4
RG = 3 W, L = 1 mH, VCE = 480 V
4.0
ICE, COLLECTOR TO EMITTER CURRENT (A)
55
3
Figure 6. COLLECTOR TO EMITTER ON−STATE
VOLTAGE
EOFF, TURN−OFF ENERGY LOSS (mJ)
EON, TURN−ON ENERGY LOSS (mJ)
Figure 5. COLLECTOR TO EMITTER ON−STATE
VOLTAGE
6
2
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
35
RG = 3 W, L = 1 mH, VCE = 480 V
TJ = 25°C, TJ = 150°C, VGE = 10 V
200
150
TJ = 25°C, TJ = 150°C, VGE = 15 V
100
50
30
TJ = 25°C, TJ = 150°C, VGE = 15 V
25
10
20
30
40
50
0
10
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
20
30
40
50
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 9. TURN−ON DELAY TIME vs. COLLECTOR
TO EMITTER CURRENT
Figure 10. TURN−ON RISE TIME vs. COLLECTOR
TO EMITTER CURRENT
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4
HGTG30N60B3D
300
120
250
tfI, FALL TIME (ns)
td(OFF)I, TURN−OFF DELAY TIME (ns)
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
TJ = 150°C, VGE = 10 V, VGE = 15 V
TJ = 25°C, VGE = 10 V, VGE = 15 V
200
150
20
30
40
80
60
TJ = 25°C, VGE = 10 V and 15 V
40
10
60
50
TJ = 150°C, VGE = 10 V and 15 V
100
RG = 3 W, L =1 mH,
VCE = 480 V
100
10
RG = 3 W, L = 1 mH, VCE = 480 V
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER
CURRENT (A)
DUTY CYCLE < 0.5%, VCE = 10 V
PULSE DURATION = 250 ms
250
TC = −55°C
200
150
TC = 25°C
100
TC = 150°C
50
0
4
5
6
7
8
9
10
11
VGE, GATE TO EMITTER VOLTAGE (V)
C, CAPACITANCE (nF)
CIES
6
4
COES
2
CRES
0
0
5
10
15
50
16
60
Ig(REF) = 1 mA, RL = 10 W, TC = 25°C
14
12
VCE = 600 V
10
8
6
VCE = 200 V
4
VCE = 400 V
2
0
0
50
100
150
Figure 14. GATE CHARGE WAVEFORMS
FREQUENCY = 1 MHz
8
40
QG, GATE CHARGE (nC)
Figure 13. TRANSFER CHARACTERISTIC
10
30
Figure 12. FALL TIME vs. COLLECTOR TO
EMITTER CURRENT
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 11. TURN−OFF DELAY TIME vs.
COLLECTOR TO EMITTER CURRENT
300
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 15. CAPACITANCE vs. COLLECTOR TO
EMITTER VOLTAGE
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5
200
HGTG30N60B3D
ZqJC, NORMALIZED THERMAL RESPONSE
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
100
0.50
0.20
10−1
0.10
t1
0.05
PD
0.02
t2
0.01
10−2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD x ZqJC x RqJC) + TC
SINGLE PULSE
10−5
10−4
10−3
10−2
10−1
100
101
t1, RECTANGULAR PULSE DURATION (s)
50
200
175
t, RECOVERY TIMES (ns)
IEC, FORWARD CURRENT (A)
Figure 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
150
125
25°C
100
75
100°C
50
−55°C
25
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
40
trr
30
ta
20
tb
10
0
4.0
TC = 25°C, dIEC/dt = 200 A/ms
0
2
VEC, FORWARD VOLTAGE (V)
5
10
IEC, FORWARD CURRENT (A)
Figure 17. DIODE FORWARD CURRENT vs.
FORWARD VOLTAGE DROP
Figure 18. RECOVERY TIMES vs.
FORWARD CURRENT
TEST CIRCUIT AND WAVEFORMS
HGTG30N60B3D
90%
10%
VGE
EON2
EOFF
L = 1 mH
VCE
RG = 3 W
90%
+
−
VDD = 480 V
10%
ICE
Figure 19. INDUCTIVE SWITCHING TEST CIRCUIT
t d(OFF)I
t fI
t rI
t d(ON)I
Figure 20. SWITCHING TEST WAVEFORMS
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6
20
30
HGTG30N60B3D
HANDLING PRECAUTIONS FOR IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate−insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers
in military, industrial and consumer applications, with
virtually no damage problems due to electrostatic discharge.
IGBTs can be handled safely if the following basic
precautions are taken:
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conductive
material such as “ECCOSORBDt LD26” or
equivalent.
2. When devices are removed by hand from their
carriers, the hand being used should be grounded
by any suitable means − for example, with a
metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
from circuits with power on.
5. Gate Voltage Rating − Never exceed the
gate−voltage rating of VGEM. Exceeding the rated
VGE can result in permanent damage to the oxide
layer in the gate region.
6. Gate Termination − The gates of these devices are
essentially capacitors. Circuits that leave the gate
open−circuited or floating should be avoided.
These conditions can result in turn−on of the
device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7. Gate Protection − These devices do not have an
internal monolithic Zener diode from gate to
emitter. If gate protection is required an external
Zener is recommended.
OPERATING FREQUENCY INFORMATION
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7,
8, 9 and 11. The operating frequency plot (Figure 3) of a
typical device shows fMAX1 or fMAX2; whichever is smaller
at each point. The information is based on measurements of
a typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05 / (td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to
10% of the on−state time for a 50% duty factor. Other
definitions are possible. td(OFF)I and td(ON)I are defined in
Figure 20. Device turn−off delay can establish an additional
frequency limiting condition for an application other than
TJM. td(OFF)I is important when controlling output ripple
under a lightly loaded condition.
fMAX2 is defined by fMAX2 = (PD − PC) / (EOFF + EON).
The allowable dissipation (PD) is defined by PD = (TJM − TC)
/ RqJC. The sum of device switching and conduction losses
must not exceed PD. A 50% duty factor was used (Figure 3)
and the conduction losses (PC) are approximated by
PC = (VCE x ICE) / 2.
EON and EOFF are defined in the switching waveforms
shown in Figure 20. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn−on and EOFF is the
integral of the instantaneous power loss (ICE x VCE) during
turn−off. All tail losses are included in the calculation for
EOFF; i.e., the collector current equals zero (ICE = 0).
ORDERING INFORMATION
Part Number
HGTG30N60B3D
NOTE:
Package
Brand
Shipping†
TO−247
G30N60B3D
450 Units / Tube
When ordering, use the entire part number.
All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
A
DATE 31 JAN 2019
A
E
P1
P
A2
D2
Q
E2
S
B
D
1
2
D1
E1
2
3
L1
A1
L
b4
c
(3X) b
0.25 M
(2X) b2
B A M
DIM
(2X) e
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
A
A1
A2
b
b2
b4
c
D
D1
D2
E
E1
E2
e
L
L1
P
P1
Q
S
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
13.08
~
~
0.51 0.93 1.35
15.37 15.62 15.87
12.81
~
~
4.96 5.08 5.20
~
5.56
~
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
6.60 6.80 7.00
5.34 5.46 5.58
5.34 5.46 5.58
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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