HGTG30N60B3D

UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 60 A, 600 V HGTG30N60B3D www.onsemi.com The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. The diode used in anti−parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49172. C G E EC G Features • • • • • • • 60 A, 600 V, TC = 25°C 600 V Switching SOA Capability Typical Fall Time 90 ns at TJ = 150°C Short Circuit Rating Low Conduction Loss Hyperfast Anti−Parallel Diode This is a Pb−Free Device TO−247−3LD SHORT LEAD CASE 340CK JEDEC STYLE MARKING DIAGRAM $Y&Z&3&K G30N60B3D $Y &Z &3 &K G30N60B3D = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2004 April, 2020 − Rev. 2 1 Publication Order Number: HGTG30N60B3D/D HGTG30N60B3D ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) Parameter Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C Average Diode Forward Current at 110°C Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Symbol HGTG30N60B3D Unit BVCES 600 V IC25 IC110 60 30 A A IEC(AVG) 25 A ICM 220 A VGES ±20 V V Gate to Emitter Voltage Pulsed VGEM ±30 Switching Safe Operating Area at TJ = 150°C, (Figure 2) SSOA 60 A at 600 V PD 208 W 1.67 W/°C TJ, TSTG −55 to 150 °C Maximum Lead Temperature for Soldering TL 260 °C Short Circuit Withstand Time (Note 2) at VGE = 12 V tSC 4 ms Short Circuit Withstand Time (Note 2) at VGE = 10 V tSC 10 ms Power Dissipation Total at TC = 25°C Power Dissipation Derating TC > 25°C Operating and Storage Junction Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360 V, TJ =125°C, RG = 3 W. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) Parameter Symbol Collector to Emitter Breakdown Voltage BVCES Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current ICES VCE(SAT) VGE(TH) IGES Test Condition Min Typ Max Unit 600 − − V TJ = 25°C − − 250 mA TJ = 150°C − − 3 mA TJ = 25°C − 1.45 1.9 V TJ = 150°C − 1.7 2.1 V 4.2 5 6 V IC = 250 mA, VGE = 0 V VCE = BVCES IC = IC110, VGE = 15 V IC = 250 mA, VCE = VGE VGE = ±20 V − − ±250 nA VCE(PK) = 480 V 200 − − A VCE(PK) = 600 V 60 − − A − 7.2 − V VGE = 15 V − 170 190 nC VGE = 20 V − 230 250 nC − 36 − ns − 25 − ns − 137 − ns − 58 − ns − 550 800 mJ − 680 900 mJ − 32 − ns − 24 − ns − 275 320 ns Switching SOA SSOA TJ = 150°C, RG = 3 W, VGE = 15 V, L = 100 mH, Gate to Emitter Plateau Voltage VGEP IC = IC110, VCE = 0.5 BVCES On−State Gate Charge QG(ON) IC = IC110, VCE = 0.5 BVCES Current Turn−On Delay Time td(ON)I IGBT and Diode at TJ = 25°C, ICE = IC110, VCE = 0.8 BVCES, VGE = 15 V, RG = 3 W, L = 1 mH, Test Circuit (Figure 19) Current Rise Time Current Turn−Off Delay Time Current Fall Time trI td(OFF)I tfI Turn−On Energy EON Turn−Off Energy (Note 3) EOFF Current Turn−On Delay Time td(ON)I Current Rise Time Current Turn−Off Delay Time trI td(OFF)I Current Fall Time tfI Turn−On Energy EON Turn−Off Energy (Note 3) EOFF Diode Forward Voltage VEC IGBT and Diode at TJ = 150°C, ICE = IC110, VCE = 0.8 BVCES, VGE = 15 V, RG = 3 W, L = 1 mH, Test Circuit (Figure 19) IEC = 30 A www.onsemi.com 2 − 90 150 ns − 1300 1550 mJ − 1600 1900 mJ − 1.95 2.5 V HGTG30N60B3D ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) (continued) Parameter Symbol Diode Reverse Recovery Time Test Condition trr Thermal Resistance Junction To Case RqJC Min Typ Max Unit IEC = 1 A, dIEC/dt = 200 A/ms − 32 40 ns IEC = 30 A, dIEC/dt = 200 A/ms − 45 55 ns IGBT − − 0.6 °C/W Diode − − 1.3 °C/W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Turn−Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0 A). All devices were tested per JEDEC Standard No. 24−1 Method for Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss. 225 60 VGE = 15 V ICE, COLLECTOR TO EMITTER CURRENT (A) 50 40 30 20 10 0 25 50 75 100 125 TJ = 150°C, RG = 3 W, VGE = 15 V, L = 100 mH 200 175 150 125 100 75 50 25 0 150 0 TC, CASE TEMPERATURE (°C) TJ = 150°C, RG = 3 W, L = 1 mH, VCE = 480 V fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD − PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RqJC = 0.6°C/W, SEE NOTES TC 75°C 75°C 110°C 110°C 10 1 0.1 5 10 20 200 300 400 500 600 700 Figure 2. MINIMUM SWITCHING SAFE OPERATING AREA VGE 15 V 10 V 15 V 10 V 40 20 tSC, SHORT CIRCUIT WITHSTAND TIME (ms) fMAX, OPERATING FREQUENCY (kHz) Figure 1. DC COLLECTOR CURRENT vs. CASE TEMPERATURE 100 100 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 500 VCE = 360 V, RG = 3 W, TJ = 125°C 18 450 16 400 ISC 14 350 12 300 10 250 tSC 200 8 6 10 60 ICE, COLLECTOR TO EMITTER CURRENT (A) 11 12 13 14 150 15 VGE, GATE TO EMITTER VOLTAGE (V) Figure 3. OPERATING FREQUENCY vs. COLLECTOR TO EMITTER CURRENT Figure 4. SHORT CIRCUIT WITHSTAND TIME www.onsemi.com 3 ISC, PEAK SHORT CIRCUIT CURRENT (A) ICE, DC COLLECTOR CURRENT (A) TYPICAL PERFORMANCE CURVES (unless otherwise specified) HGTG30N60B3D TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued) 350 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 225 200 175 150 TC = −55°C TC = 150°C 125 TC = 25°C 100 75 50 DUTY CYCLE < 0.5%, VGE = 10 V PULSE DURATION = 250 ms 25 0 2 4 6 8 DUTY CYCLE < 0.5%, VGE = 15 V 300 PULSE DURATION = 250 ms 250 TC = −55°C 200 TC = 150°C 150 100 TC = 25°C 50 0 10 0 1 VCE, COLLECTOR TO EMITTER VOLTAGE (V) RG = 3 W, L = 1 mH, VCE = 480 V 5 TJ = 25°C,TJ = 150°C, VGE = 10 V 4 3 2 1 0 10 TJ = 25°C,TJ = 150°C, VGE = 15 V 20 30 40 50 60 4.5 6 7 3.0 TJ = 150°C, VGE = 10 V or 15 V 2.5 2.0 1.5 1.0 0.5 0 TJ = 25°C, VGE = 10 V or 15 V 10 20 30 40 50 60 ICE, COLLECTOR TO EMITTER CURRENT (A) Figure 8. TURN−OFF ENERGY LOSS vs. COLLECTOR TO EMITTER CURRENT 250 RG = 3 W, L = 1 mH, VCE = 480 V 50 trI, RISE TIME (ns) td(ON)I, TURN−ON DELAY TIME (ns) 5 3.5 Figure 7. TURN−ON ENERGY LOSS vs. COLLECTOR TO EMITTER CURRENT 45 TJ = 25°C, TJ = 150°C, VGE = 10 V 40 4 RG = 3 W, L = 1 mH, VCE = 480 V 4.0 ICE, COLLECTOR TO EMITTER CURRENT (A) 55 3 Figure 6. COLLECTOR TO EMITTER ON−STATE VOLTAGE EOFF, TURN−OFF ENERGY LOSS (mJ) EON, TURN−ON ENERGY LOSS (mJ) Figure 5. COLLECTOR TO EMITTER ON−STATE VOLTAGE 6 2 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 35 RG = 3 W, L = 1 mH, VCE = 480 V TJ = 25°C, TJ = 150°C, VGE = 10 V 200 150 TJ = 25°C, TJ = 150°C, VGE = 15 V 100 50 30 TJ = 25°C, TJ = 150°C, VGE = 15 V 25 10 20 30 40 50 0 10 60 ICE, COLLECTOR TO EMITTER CURRENT (A) 20 30 40 50 60 ICE, COLLECTOR TO EMITTER CURRENT (A) Figure 9. TURN−ON DELAY TIME vs. COLLECTOR TO EMITTER CURRENT Figure 10. TURN−ON RISE TIME vs. COLLECTOR TO EMITTER CURRENT www.onsemi.com 4 HGTG30N60B3D 300 120 250 tfI, FALL TIME (ns) td(OFF)I, TURN−OFF DELAY TIME (ns) TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued) TJ = 150°C, VGE = 10 V, VGE = 15 V TJ = 25°C, VGE = 10 V, VGE = 15 V 200 150 20 30 40 80 60 TJ = 25°C, VGE = 10 V and 15 V 40 10 60 50 TJ = 150°C, VGE = 10 V and 15 V 100 RG = 3 W, L =1 mH, VCE = 480 V 100 10 RG = 3 W, L = 1 mH, VCE = 480 V ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) DUTY CYCLE < 0.5%, VCE = 10 V PULSE DURATION = 250 ms 250 TC = −55°C 200 150 TC = 25°C 100 TC = 150°C 50 0 4 5 6 7 8 9 10 11 VGE, GATE TO EMITTER VOLTAGE (V) C, CAPACITANCE (nF) CIES 6 4 COES 2 CRES 0 0 5 10 15 50 16 60 Ig(REF) = 1 mA, RL = 10 W, TC = 25°C 14 12 VCE = 600 V 10 8 6 VCE = 200 V 4 VCE = 400 V 2 0 0 50 100 150 Figure 14. GATE CHARGE WAVEFORMS FREQUENCY = 1 MHz 8 40 QG, GATE CHARGE (nC) Figure 13. TRANSFER CHARACTERISTIC 10 30 Figure 12. FALL TIME vs. COLLECTOR TO EMITTER CURRENT VGE, GATE TO EMITTER VOLTAGE (V) Figure 11. TURN−OFF DELAY TIME vs. COLLECTOR TO EMITTER CURRENT 300 20 ICE, COLLECTOR TO EMITTER CURRENT (A) 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 15. CAPACITANCE vs. COLLECTOR TO EMITTER VOLTAGE www.onsemi.com 5 200 HGTG30N60B3D ZqJC, NORMALIZED THERMAL RESPONSE TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued) 100 0.50 0.20 10−1 0.10 t1 0.05 PD 0.02 t2 0.01 10−2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD x ZqJC x RqJC) + TC SINGLE PULSE 10−5 10−4 10−3 10−2 10−1 100 101 t1, RECTANGULAR PULSE DURATION (s) 50 200 175 t, RECOVERY TIMES (ns) IEC, FORWARD CURRENT (A) Figure 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE 150 125 25°C 100 75 100°C 50 −55°C 25 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 40 trr 30 ta 20 tb 10 0 4.0 TC = 25°C, dIEC/dt = 200 A/ms 0 2 VEC, FORWARD VOLTAGE (V) 5 10 IEC, FORWARD CURRENT (A) Figure 17. DIODE FORWARD CURRENT vs. FORWARD VOLTAGE DROP Figure 18. RECOVERY TIMES vs. FORWARD CURRENT TEST CIRCUIT AND WAVEFORMS HGTG30N60B3D 90% 10% VGE EON2 EOFF L = 1 mH VCE RG = 3 W 90% + − VDD = 480 V 10% ICE Figure 19. INDUCTIVE SWITCHING TEST CIRCUIT t d(OFF)I t fI t rI t d(ON)I Figure 20. SWITCHING TEST WAVEFORMS www.onsemi.com 6 20 30 HGTG30N60B3D HANDLING PRECAUTIONS FOR IGBTs Insulated Gate Bipolar Transistors are susceptible to gate−insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBDt LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means − for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating − Never exceed the gate−voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination − The gates of these devices are essentially capacitors. Circuits that leave the gate open−circuited or floating should be avoided. These conditions can result in turn−on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection − These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. OPERATING FREQUENCY INFORMATION Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05 / (td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on−state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 20. Device turn−off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD − PC) / (EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM − TC) / RqJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE) / 2. EON and EOFF are defined in the switching waveforms shown in Figure 20. EON is the integral of the instantaneous power loss (ICE x VCE) during turn−on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn−off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). ORDERING INFORMATION Part Number HGTG30N60B3D NOTE: Package Brand Shipping† TO−247 G30N60B3D 450 Units / Tube When ordering, use the entire part number. All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders. www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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