MMG3006NT1

NXP Semiconductors Technical Data Document Number: MMG3006NT1 Rev. 6, 12/2017 Heterojunction Bipolar Transistor Technology (InGaP HBT) MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a general purpose amplifier that is internally input prematched and designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 400 to 2400 MHz such as cellular, PCS, WLL, PHS, VHF, UHF, UMTS and general small--signal RF. 400--2400 MHz, 17.5 dB 33 dBm InGaP HBT GPA Features  Frequency: 400--2400 MHz  P1dB: 33 dBm @ 900 MHz  Small--signal gain: 17.5 dB @ 900 MHz  Third order output intercept point: 49 dBm @ 900 MHz  Single 5 V supply  Internally input prematched to 50 ohms Table 1. Typical Performance (1) Table 2. Maximum Ratings Rating Symbol 900 MHz 1960 MHz 2140 MHz Unit Small--Signal Gain (S21) Gp 17.5 14 14 dB Input Return Loss (S11) IRL --8 --9 --12 dB Output Return Loss (S22) ORL --13 --14 --18 dB Power Output @1dB Compression P1db 33 33 33 dBm Third Order Output Intercept Point OIP3 49 49 49 dBm Characteristic QFN 4  4--16L Symbol Value Unit Supply Voltage VDC 6 V Supply Current IDC 1400 mA RF Input Power Pin 28 dBm Storage Temperature Range Tstg --65 to +150 C Junction Temperature TJ 175 C 1. VDC = 5 Vdc, TA = 25C, 50 ohm system, application circuit tuned for specified frequency. Table 3. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 89C, 5 Vdc, 850 mA, no RF applied Symbol Value (2) Unit RJC 7.8 C/W 2. Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.  2008, 2010–2011, 2014, 2017 NXP B.V. RF Device Data NXP Semiconductors MMG3006NT1 1 Table 4. Electrical Characteristics (VDC = 5 Vdc, 900 MHz, TA = 25C, 50 ohm system, in NXP Application Circuit) Symbol Min Typ Max Unit Small--Signal Gain (S21) Gp 16.5 17.5 — dB Input Return Loss (S11) IRL — --8 — dB Output Return Loss (S22) ORL — --13 — dB Power Output @ 1dB Compression P1dB — 33 — dBm Third Order Output Intercept Point OIP3 — 49 — dBm Characteristic Noise Figure NF — 6.6 — dB Supply Current IDC 760 850 960 mA Supply Voltage VDC — 5 — V Table 5. Functional Pin Description Name Pin Number VBA 1 RFin 2, 3, 4 RF input for the power amplifier. This pin is DC--coupled and requires a DC--blocking series capacitor. RFout/ VCC 9, 10, 11, 12 RF output for the power amplifier. This pin is DC--coupled and requires a DC--blocking series capacitor. VCC 16 GND Backside Center Metal VCC N.C. N.C. N.C. Description 16 15 14 13 Bias voltage supply. VBA 1 12 RFout/VCC RFin 2 RFin 3 11 RFout/VCC 10 RFout/VCC RFin 4 9 5 Collector voltage supply. The center metal base of the QFN package provides both DC and RF ground as well as heat sink contact for the power amplifier. 6 7 RFout/VCC 8 N.C. N.C. N.C. N.C. (Top View) Figure 1. Pin Connections Table 6. ESD Protection Characteristics Test Conditions/Test Methodology Class Human Body Model (per JESD 22--A114) 1C Machine Model (per EIA/JESD 22--A115) A Charge Device Model (per JESD 22--C101) IV Table 7. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit 1 260 C Per JESD 22--A113, IPC/JEDEC J--STD--020 Table 8. Ordering Information Device MMG3006NT1 Tape and Reel Information T1 Suffix = 1,000 Units, 12 mm Tape Width, 13--inch Reel Package QFN 4  4--16L MMG3006NT1 2 RF Device Data NXP Semiconductors 106 55 720 mA 50 IDC = 850 mA 45 MTTF (YEARS) IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 50 OHM TYPICAL CHARACTERISTICS 570 mA 40 35 30 105 104 VDC = 5 Vdc f1 = 1829 MHz f2 = 1830 MHz 25 103 20 15 20 25 30 35 120 125 130 135 140 145 Pout, OUTPUT POWER (dBm) TJ, JUNCTION TEMPERATURE (C) NOTE: Supply current is varied under external resistor control. Peak power is not reduced at any listed current. Similar results can be obtained for other frequency bands. NOTE: The MTTF is calculated with VDC = 5 Vdc, IDC = 850 mA 150 Figure 3. MTTF versus Junction Temperature Figure 2. Third Order Output Intercept Point versus Output Power and Supply Current MMG3006NT1 RF Device Data NXP Semiconductors 3 50 OHM APPLICATION CIRCUIT: 900 MHz VSUPPLY R1 RF INPUT 16 C4 C3 R3 R2 1 Z1 Z2 Z3 Z4 Z5 15 2 C8 C9 6 7 C6 Z7 Z8 C7 Z9 10 DUT 5 Z1 Z2, Z9, Z10 Z3 Z4 Z5 Z6 11 4 C5 L1 12 Current Mirror 3 C1 14 13 Z10 Z11 RF OUTPUT C2 9 C10 C11 8 0.140 x 0.028 Microstrip 0.044 x 0.028 Microstrip 0.169 x 0.028 Microstrip 0.177 x 0.028 Microstrip 0.026 x 0.053 Microstrip Z6 Z7 Z8 Z11 PCB 0.026 x 0.089 Microstrip 0.167 x 0.028 Microstrip 0.178 x 0.028 Microstrip 0.096 x 0.028 Microstrip Isola FR408, 0.014, r = 3.7 Figure 4. 50 Ohm Test Circuit Schematic Table 9. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 15 pF Chip Capacitors ECUV1H150JCV Panasonic C3, C6 0.01 F Chip Capacitors C0603C103J5RAC Kemet C4, C7 0.1 F Chip Capacitors C0603C104J5RAC Kemet C5 2.2 F Chip Capacitor T491A225K016AT Kemet C8 6.8 pF Chip Capacitor 06035J6R8BS AVX C9, C11 3.9 pF Chip Capacitors 06035J3R9BS AVX C10 5.6 pF Chip Capacitor 06035J5R6BS AVX L1 15 nH Chip Inductor 1008CS--150XJB Coilcraft R1 100 , 1/4 W Chip Resistor ERJ8GEYJ101V Panasonic R2, R3 0 , 1/10 W Chip Resistors CRCW06030000FKEA Vishay MMG3006NT1 4 RF Device Data NXP Semiconductors 50 OHM APPLICATION CIRCUIT: 900 MHz VBA VSUPPLY C5 R2 C3 C4 C6 R1 C7 R3 L1 RFin RFout C2 C1 C8 C9 C10 C11 MMG3006N Rev. 4 Figure 5. 50 Ohm Test Circuit Component Layout MMG3006NT1 RF Device Data NXP Semiconductors 5 50 OHM TYPICAL CHARACTERISTICS: 900 MHz --5 18 16 IRL, INPUT RETURN LOSS (dB) Gp, SMALL--SIGNAL GAIN (dB) 20 TC = --40C 85C 25C 14 12 --6 TC = --40C --7 85C 25C --8 --9 VDC = 5 Vdc VDC = 5 Vdc 10 840 870 900 930 --10 840 960 960 Figure 7. Input Return Loss (S11) versus Frequency P1dB, 1 dB COMPRESSION POINT (dBm) 40 TC = --40C --10 --15 25C 85C --20 VDC = 5 Vdc 870 900 930 85C 35 30 25C TC = --40C 25 VDC = 5 Vdc 20 840 960 870 900 930 960 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 8. Output Return Loss (S22) versus Frequency Figure 9. P1dB versus Frequency 52 10 TC = --40C 48 8 25C NF, NOISE FIGURE (dB) ORL, OUTPUT RETURN LOSS (dB) 930 Figure 6. Small--Signal Gain (S21) versus Frequency --25 840 IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 900 f, FREQUENCY (MHz) --5 50 870 f, FREQUENCY (MHz) 85C 46 TC = 85C --40C 6 25C 4 2 44 VDC = 5 Vdc 1 MHz Tone Spacing 42 840 870 900 930 VDC = 5 Vdc 960 0 840 870 900 930 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 10. Third Order Output Intercept Point versus Frequency Figure 11. Noise Figure versus Frequency 960 MMG3006NT1 6 RF Device Data NXP Semiconductors --25 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 50 OHM TYPICAL CHARACTERISTICS: 900 MHz VDC = 5 Vdc, f = 900 MHz Single--Carrier IS--95, 9 Channel Forward 750 kHz Measurement Offset 30 kHz Measurement Bandwidth --30 --35 --40 25C TC = --40C --45 --50 85C --55 24 26 28 30 32 --30 VDC = 5 Vdc, f = 900 MHz Single--Carrier IS--95, 9 Channel Forward 885 kHz Measurement Offset 30 kHz Measurement Bandwidth --35 --40 --45 TC = --40C --50 25C 85C --55 --60 24 26 28 30 32 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 12. IS--95 Adjacent Channel Power Ratio versus Output Power Figure 13. IS--95 Adjacent Channel Power Ratio versus Output Power MMG3006NT1 RF Device Data NXP Semiconductors 7 50 OHM APPLICATION CIRCUIT: 1960 MHz VSUPPLY R1 C4 C3 RF INPUT R3 R2 16 1 Z1 Z2 Z3 Z4 Z5 15 2 11 C8 C9 5 Z1, Z11 Z2 Z3 Z4 Z5 Z6 6 7 0.140 x 0.028 Microstrip 0.268 x 0.028 Microstrip 0.084 x 0.028 Microstrip 0.038 x 0.028 Microstrip 0.026 x 0.053 Microstrip 0.026 x 0.089 Microstrip Z6 Z7 Z8 Z9 Z10 10 DUT 4 C6 C7 L1 12 Current Mirror 3 C1 C5 14 13 Z11 RF OUTPUT C2 9 C10 C11 8 Z7 Z8 Z9 Z10 PCB 0.041 x 0.028 Microstrip 0.093 x 0.028 Microstrip 0.033 x 0.028 Microstrip 0.222 x 0.028 Microstrip Isola FR408, 0.014, r = 3.7 Figure 14. 50 Ohm Test Circuit Schematic Table 10. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 15 pF Chip Capacitors ECUV1H150JCV Panasonic C3, C6 0.01 F Chip Capacitors C0603C103J5RAC Kemet C4, C7 0.1 F Chip Capacitors C0603C104J5RAC Kemet C5 2.2 F Chip Capacitor T491A225K016AT Kemet C8, C9 3.0 pF Chip Capacitors 06035J3R0BS AVX C10 2.0 pF Chip Capacitor 06035J2R0BS AVX C11 2.7 pF Chip Capacitor 06035J2R7BS AVX L1 15 nH Chip Inductor 1008CS--150XJB Coilcraft R1 100 , 1/4 W Chip Resistor ERJ8GEYJ101V Panasonic R2, R3 0 , 1/10 W Chip Resistors CRCW06030000FKEA Vishay MMG3006NT1 8 RF Device Data NXP Semiconductors 50 OHM APPLICATION CIRCUIT: 1960 MHz VBA VSUPPLY C5 R2 C3 C4 C6 R1 C7 R3 L1 RFin RFout C2 C1 C8 C9 C10 C11 MMG3006N Rev. 4 Figure 15. 50 Ohm Test Circuit Component Layout MMG3006NT1 RF Device Data NXP Semiconductors 9 18 --6 16 --7 IRL, INPUT RETURN LOSS (dB) Gp, SMALL--SIGNAL GAIN (dB) 50 OHM TYPICAL CHARACTERISTICS: 1960 MHz TC = --40C 14 85C 12 25C 10 TC = --40C --8 85C 25C --9 --10 VDC = 5 Vdc 8 1900 1930 1960 1990 VDC = 5 Vdc --11 1900 2020 f, FREQUENCY (MHz) 1960 f, FREQUENCY (MHz) Figure 16. Small--Signal Gain (S21) versus Frequency Figure 17. Input Return Loss (S11) versus Frequency P1dB, 1 dB COMPRESSION POINT (dBm) --10 TC = --40C --15 85C 25C --20 VDC = 5 Vdc --25 1900 IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 1990 2020 40 1930 1960 1990 35 30 85C 25C TC = --40C 25 VDC = 5 Vdc 20 1900 2020 1930 1960 1990 2020 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 18. Output Return Loss (S22) versus Frequency Figure 19. P1dB versus Frequency 52 10 TC = --40C 50 8 25C NF, NOISE FIGURE (dB) ORL, OUTPUT RETURN LOSS (dB) --5 1930 48 85C 46 TC = 85C 6 4 --40C 25C 2 44 VDC = 5 Vdc 1 MHz Tone Spacing 42 1900 1930 1960 1990 VDC = 5 Vdc 2020 0 1900 1930 1960 1990 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 20. Third Order Output Intercept Point versus Frequency Figure 21. Noise Figure versus Frequency 2020 MMG3006NT1 10 RF Device Data NXP Semiconductors ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 50 OHM TYPICAL CHARACTERISTICS: 1960 MHz --30 VDC = 5 Vdc, f = 1960 MHz Single--Carrier IS--95, 9 Channel Forward 750 kHz Measurement Offset 30 kHz Measurement Bandwidth --35 --40 --45 25C TC = --40C --50 85C --55 22 24 26 30 28 --30 VDC = 5 Vdc, f = 1960 MHz Single--Carrier IS--95, 9 Channel Forward 885 kHz Measurement Offset 30 kHz Measurement Bandwidth --35 --40 --45 --50 --55 TC = --40C 25C --65 --70 20 32 85C --60 22 24 26 28 30 32 Pout, OUTPUT POWER (dBm) Figure 22. IS--95 Adjacent Channel Power Ratio versus Output Power Figure 23. IS--95 Adjacent Channel Power Ratio versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) Pout, OUTPUT POWER (dBm) --30 --35 VDC = 5 Vdc, f = 1960 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) --40 --45 --50 TC = --40C 25C --55 85C --60 --65 20 22 24 26 28 Pout, OUTPUT POWER (dBm) Figure 24. Single--Carrier W--CDMA Adjacent Channel Power Ratio versus Output Power MMG3006NT1 RF Device Data NXP Semiconductors 11 50 OHM APPLICATION CIRCUIT: 2140 MHz VSUPPLY R1 C4 C3 RF INPUT R3 R2 16 1 Z1 Z2 Z3 Z4 C9 Z6 11 6 7 0.096 x 0.028 Microstrip 0.044 x 0.028 Microstrip 0.352 x 0.028 Microstrip 0.038 x 0.028 Microstrip 0.026 x 0.053 Microstrip 0.026 x 0.089 Microstrip Z7 Z8 Z9 10 DUT 4 C6 C7 L1 12 2 5 Z1 Z2 Z3 Z4 Z5 Z6 C5 14 13 Current Mirror 3 C1 C8 Z5 15 Z10 RF OUTPUT C2 9 C10 8 Z7 Z8 Z9 Z10 PCB 0.074 x 0.028 Microstrip 0.093 x 0.028 Microstrip 0.222 x 0.028 Microstrip 0.140 x 0.028 Microstrip Isola FR408, 0.014, r = 3.7 Figure 25. 50 Ohm Test Circuit Schematic Table 11. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 15 pF Chip Capacitors ECUV1H150JCV Panasonic C3, C6 0.01 F Chip Capacitors C0603C103J5RAC Kemet C4, C7 0.1 F Chip Capacitors C0603C104J5RAC Kemet C5 2.2 F Chip Capacitor T491A225K016AT Kemet C8 0.5 pF Chip Capacitor 06035J0R5BS AVX C9 3.6 pF Chip Capacitor 06035J3R6BS AVX C10 3.9 pF Chip Capacitor 06035J3R9BS AVX L1 15 nH Chip Inductor 1008CS--150XJB Coilcraft R1 100 , 1/4 W Chip Resistor ERJ8GEYJ101V Panasonic R2, R3 0 , 1/10 W Chip Resistors CRCW06030000FKEA Vishay MMG3006NT1 12 RF Device Data NXP Semiconductors 50 OHM APPLICATION CIRCUIT: 2140 MHz VBA VSUPPLY C5 R2 C3 C4 C6 R1 C7 R3 L1 RFin RFout C2 C1 C8 C9 C10 MMG3006N Rev. 4 Figure 26. 50 Ohm Test Circuit Component Layout MMG3006NT1 RF Device Data NXP Semiconductors 13 50 OHM TYPICAL CHARACTERISTICS: 2140 MHz --15 16 IRL, INPUT RETURN LOSS (dB) Gp, SMALL--SIGNAL GAIN (dB) 18 TC = --40C 14 85C 25C 12 10 TC = --40C --20 25C --25 85C --30 VDC = 5 Vdc 8 2080 2110 2140 2170 VDC = 5 Vdc --35 2080 2200 f, FREQUENCY (MHz) 2140 f, FREQUENCY (MHz) Figure 27. Small--Signal Gain (S21) versus Frequency Figure 28. Input Return Loss (S11) versus Frequency TC = --40C --15 85C 25C --20 VDC = 5 Vdc IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) --25 2080 2110 2140 2170 P1dB, 1 dB COMPRESSION POINT (dBm) --10 2200 TC = --40C 35 30 25C 85C 25 VDC = 5 Vdc 20 2080 2200 2110 2140 2170 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 29. Output Return Loss (S22) versus Frequency Figure 30. P1dB versus Frequency 52 50 2170 40 2200 10 TC = --40C 8 25C NF, NOISE FIGURE (dB) ORL, OUTPUT RETURN LOSS (dB) --5 2110 48 85C 46 6 TC = 85C 25C 4 --40C 2 44 VDC = 5 Vdc 1 MHz Tone Spacing 42 2080 2110 2140 2170 VDC = 5 Vdc 2200 0 2080 2110 2140 2170 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 31. Third Order Output Intercept Point versus Frequency Figure 32. Noise Figure versus Frequency 2200 MMG3006NT1 14 RF Device Data NXP Semiconductors ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 50 OHM TYPICAL CHARACTERISTICS: 2140 MHz --30 VDC = 5 Vdc, f = 2140 MHz Single--Carrier IS--95, 9 Channel Forward 750 kHz Measurement Offset 30 kHz Measurement Bandwidth --35 --40 25C --45 85C --50 TC = --40C --55 22 24 26 28 VDC = 5 Vdc, f = 2140 MHz Single--Carrier IS--95, 9 Channel Forward 885 kHz Measurement Offset 30 kHz Measurement Bandwidth --35 --40 --45 --50 --55 TC = --40C --60 85C 25C --65 --70 20 32 30 --30 22 24 26 28 30 32 Pout, OUTPUT POWER (dBm) Figure 33. IS--95 Adjacent Channel Power Ratio versus Output Power Figure 34. IS--95 Adjacent Channel Power Ratio versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) Pout, OUTPUT POWER (dBm) --30 --35 VDC = 5 Vdc, f = 2140 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) --40 85C 25C --45 TC = --40C --50 --55 --60 --65 20 22 24 26 28 Pout, OUTPUT POWER (dBm) Figure 35. Single--Carrier W--CDMA Adjacent Channel Power Ratio versus Output Power MMG3006NT1 RF Device Data NXP Semiconductors 15 50 OHM TYPICAL CHARACTERISTICS Table 12. Common Emitter S--Parameters (VDC = 5 Vdc, TA = 25C, 50 Ohm System) S11 S21 S12 S22 f MHz |S11|  |S21|  |S12|  |S22|  250 0.821 --173.7 2.816 143.3 0.00597 --61.7 0.922 --179.0 300 0.841 --174.5 2.643 137.3 0.00514 --56.7 0.922 --178.9 350 0.860 --175.2 2.471 132.0 0.00455 --51.6 0.922 --179.1 400 0.872 --175.3 2.309 127.6 0.00435 --44.2 0.921 --180.0 450 0.889 --176.1 2.149 124.2 0.00371 --46.7 0.924 --179.4 500 0.900 --177.0 2.030 120.3 0.00331 --40.6 0.924 --179.6 550 0.909 --177.9 1.908 116.9 0.00306 --35.3 0.925 --179.4 600 0.917 --178.8 1.796 113.8 0.00286 --30.6 0.925 --179.4 650 0.924 --179.6 1.695 110.8 0.00269 --25.9 0.924 --179.6 700 0.930 179.6 1.605 108.2 0.00258 --20.7 0.923 --179.5 750 0.935 178.9 1.522 105.8 0.00248 --15.9 0.922 --179.6 800 0.939 178.2 1.448 103.4 0.00243 --11.1 0.921 --179.8 850 0.943 177.5 1.380 101.3 0.00240 --6.6 0.920 --179.9 900 0.946 176.9 1.320 99.2 0.00239 --2.2 0.919 180.0 950 0.949 176.3 1.266 97.2 0.00239 1.8 0.918 179.9 1000 0.951 175.7 1.216 95.2 0.00242 5.4 0.918 179.6 1050 0.953 175.2 1.172 93.4 0.00246 8.8 0.918 179.5 1100 0.954 174.6 1.133 91.5 0.00250 11.9 0.917 179.3 1150 0.956 174.1 1.098 89.7 0.00255 14.1 0.917 179.0 1200 0.957 173.6 1.067 87.8 0.00261 16.7 0.916 178.8 1250 0.958 173.1 1.039 86.0 0.00268 18.6 0.915 178.6 1300 0.958 172.6 1.015 84.3 0.00275 19.9 0.915 178.3 1350 0.958 172.2 0.994 82.4 0.00282 21.4 0.914 177.9 1400 0.959 171.7 0.978 80.5 0.00292 22.6 0.913 177.6 1450 0.958 171.3 0.964 78.5 0.00299 23.5 0.913 177.3 1500 0.957 170.9 0.952 76.5 0.00306 23.9 0.912 177.1 1550 0.957 170.5 0.945 74.3 0.00316 24.2 0.912 176.7 1600 0.955 170.0 0.941 72.0 0.00324 24.3 0.911 176.5 1650 0.954 169.7 0.941 69.6 0.00332 23.7 0.910 176.2 1700 0.951 169.2 0.944 67.0 0.00340 23.3 0.909 175.8 1750 0.949 168.8 0.951 64.1 0.00348 22.3 0.907 175.5 1800 0.945 168.4 0.969 60.9 0.00360 21.0 0.906 175.2 1850 0.942 168.1 0.975 57.4 0.00361 19.4 0.905 175.0 1900 0.937 167.7 0.985 53.5 0.00364 16.9 0.903 174.6 1950 0.932 167.3 0.999 49.0 0.00363 14.0 0.902 174.4 2000 0.925 166.9 1.016 43.7 0.00357 9.9 0.901 174.1 2050 0.918 166.4 1.034 37.5 0.00346 5.4 0.902 173.8 2100 0.910 166.0 1.048 30.2 0.00322 --0.4 0.903 173.4 2150 0.904 165.6 1.053 21.7 0.00290 --6.9 0.905 173.2 2200 0.900 165.2 1.038 11.9 0.00242 --13.5 0.910 172.9 2250 0.902 164.9 0.995 1.2 0.00178 --19.1 0.916 172.5 2300 0.910 164.4 0.922 --10.0 0.00104 --18.2 0.925 172.2 2350 0.924 164.1 0.823 --20.9 0.000474 24.3 0.933 171.9 (continued) MMG3006NT1 16 RF Device Data NXP Semiconductors 50 OHM TYPICAL CHARACTERISTICS Table 12. Common Emitter S--Parameters (VDC = 5 Vdc, TA = 25C, 50 Ohm System) (continued) S11 S21 S12 S22 f MHz |S11|  |S21|  |S12|  |S22|  2400 0.938 163.7 0.711 --30.9 0.000864 82.0 0.938 171.7 2450 0.952 163.3 0.600 --39.7 0.00152 86.3 0.943 171.4 2500 0.963 162.9 0.498 --47.0 0.00207 84.0 0.945 171.1 2550 0.970 162.5 0.408 --53.1 0.00253 80.0 0.946 170.8 2600 0.976 162.1 0.332 --58.0 0.00287 76.4 0.947 170.4 2650 0.981 161.6 0.268 --61.9 0.00316 73.4 0.945 169.0 2700 0.983 161.2 0.215 --64.8 0.00340 71.2 0.944 168.3 2750 0.986 160.8 0.170 --66.7 0.00361 69.2 0.943 167.4 2800 0.988 160.5 0.132 --67.6 0.00382 67.5 0.941 166.5 2850 0.988 160.0 0.101 --66.9 0.00402 66.1 0.940 165.9 2900 0.989 159.6 0.075 --64.1 0.00418 64.8 0.939 165.1 2950 0.990 159.2 0.053 --57.4 0.00438 63.4 0.938 164.5 3000 0.990 158.8 0.037 --43.3 0.00455 62.3 0.937 163.9 MMG3006NT1 RF Device Data NXP Semiconductors 17 0.65 0.40 3.00 4.30 0.65 2.5  2.5 solder pad with thermal via structure. All dimensions in mm. Figure 36. PCB Pad Layout for 16--Lead QFN 4  4 M06N WLYW Figure 37. Product Marking MMG3006NT1 18 RF Device Data NXP Semiconductors PACKAGE DIMENSIONS MMG3006NT1 RF Device Data NXP Semiconductors 19 MMG3006NT1 20 RF Device Data NXP Semiconductors MMG3006NT1 RF Device Data NXP Semiconductors 21 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes  AN1955: Thermal Measurement Methodology of RF Power Amplifiers  AN3100: General Purpose Amplifier Biasing  AN3778: PCB Layout Guidelines for PQFN/QFN Style Packages Requiring Thermal Vias for Heat Dissipation Software  .s2p File Development Tools  Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.nxp.com, and select the “Part Number” link. Go to Software & Tools on the part’s Product Summary page to download the respective tool. FAILURE ANALYSIS At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In cases where NXP is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third party vendors with moderate success. For updates contact your local NXP Sales Office. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Jan. 2008  Initial Release of Data Sheet 1 Mar. 2008  Corrected Table 7, Moisture Sensitivity Level Rating from 3 to 1, p. 3  Corrected S--Parameter table frequency column label to read “MHz” versus “GHz”, pp. 17, 18 2 Mar. 2008  Corrected Tape and Reel information from 330 mm to 12 mm, p. 1  Corrected Figs. 24, 35, Single--Carrier W--CDMA Adjacent Channel Power Ratio versus Output Power y--axis (ACPR) unit of measure to dBc, pp. 12, 16 3 May 2010  Added new Fig. 3, Third Order Output Intercept Point versus Output Power and Supply Current, p. 4  Added AN3778, PCB Layout Guidelines for PQFN/QFN Style Packages Requiring Thermal Vias for Heat Dissipation, Application Notes, p. 23  Added .s2p File availability to Product Software, p. 23 4 Jan. 2011  Corrected temperature at which ThetaJC is measured from 25C to 89C and added “no RF applied” to Thermal Characteristics table to indicate that thermal characterization is performed under DC test with no RF signal applied, p. 1  Removed IDC bias callout from Table 10, Common Source S--Parameters heading as bias is not a controlled value, pp. 17--18  Added Printed Circuit Boards availability to Development Tools, p. 23 5 Sept. 2014  Table 2, Maximum Ratings: updated Junction Temperature from 150C to 175C to reflect recent test results of the device, p. 1  Table 6, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD ratings are characterized during new product development but are not 100% tested during production. ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive devices, p. 2  Removed Fig. 2, Collector Current versus Bias Voltage at Pin #1, p. 3  Added Fig. 38, Product Marking, p. 18  Added Failure Analysis information, p. 22 (continued) MMG3006NT1 22 RF Device Data NXP Semiconductors REVISION HISTORY (cont.) Revision Date Description 6 Dec. 2017  Fig. 37, Product Marking: updated to show location of Pin 1 on Product Marking and updated date code line to reflect improved traceability information, p. 18 MMG3006NT1 RF Device Data NXP Semiconductors 23 How to Reach Us: Home Page: nxp.com Web Support: nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/SalesTermsandConditions. NXP, the NXP logo, Freescale and the Freescale logo are trademarks of NXP B.V. All other product or service names are the property of their respective owners. E 2008, 2010–2011, 2014, 2017 NXP B.V. MMG3006NT1 Document Number: MMG3006NT1 Rev. 6, 12/2017 24 RF Device Data NXP Semiconductors