MRF6VP11KGSR5

Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 8, 9/2012 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for pulse wideband applications with frequencies up to 150 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical Pulse Performance at 130 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain — 26 dB Drain Efficiency — 71% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak Power Features Characterized with Series Equivalent Large--Signal Impedance Parameters CW Operation Capability with Adequate Cooling Qualified Up to a Maximum of 50 VDD Operation Integrated ESD Protection Designed for Push--Pull Operation Greater Negative Gate--Source Voltage Range for Improved Class C Operation • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 Inch Reel. • • • • • • MRF6VP11KHR6 MRF6VP11KGSR5 1.8--150 MHz, 1000 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFETs CASE 375D--05 STYLE 1 NI--1230--4 MRF6VP11KHR6 CASE 2282--02 NI--1230S--4 GULL MRF6VP11KGSR5 PARTS ARE PUSH--PULL RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 2 RFoutB/VDSB Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +110 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Storage Temperature Range Tstg -- 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C (Top View) Figure 1. Pin Connections Table 2. Thermal Characteristics Symbol Value (2,3) Unit Thermal Resistance, Junction to Case CW: Case Temperature 67°C, 1000 W CW, 100 MHz RθJC 0.13 °C/W Thermal Impedance, Junction to Case Pulse: Case Temperature 80°C, 1000 W Peak, 100 μsec Pulse Width, 20% Duty Cycle ZθJC 0.03 °C/W Characteristic 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2008--2010, 2012. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MRF6VP11KHR6 MRF6VP11KGSR5 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2, passes 2000 V Machine Model (per EIA/JESD22--A115) A, passes 125 V Charge Device Model (per JESD22--C101) IV, passes 2000 V Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit IGSS — — 10 μAdc V(BR)DSS 110 — — Vdc Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 100 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) IDSS — — 5 mA Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 1600 μAdc) VGS(th) 1 1.63 3 Vdc Gate Quiescent Voltage (2) (VDD = 50 Vdc, ID = 150 mAdc, Measured in Functional Test) VGS(Q) 1.5 2.2 3.5 Vdc Drain--Source On--Voltage (1) (VGS = 10 Vdc, ID = 4 Adc) VDS(on) — 0.28 — Vdc Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 3.3 — pF Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 147 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 506 — pF Characteristic Off Characteristics (1) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (ID = 300 mA, VGS = 0 Vdc) On Characteristics Dynamic Characteristics (1) Functional Tests (2,3) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (200 W Avg.), f = 130 MHz, 100 μsec Pulse Width, 20% Duty Cycle Power Gain Gps 24 26 28 dB Drain Efficiency ηD 69 71 — % Input Return Loss IRL — --16 --9 dB 1. Each side of device measured separately. 2. Measurements made with device in push--pull configuration. 3. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GS) parts. MRF6VP11KHR6 MRF6VP11KGSR5 2 RF Device Data Freescale Semiconductor, Inc. VBIAS B1 + + + C1 C2 C3 L1 R2 R1 C4 C5 C6 C7 C8 C9 Z4 Z1 + L3 C10 C11 C13 Z8 RF INPUT VSUPPLY Z5 C12 Z14 C16 C17 C18 C19 C15 C20 Z16 Z18 DUT J1 L2 Z12 + Z6 Z3 Z2 C21 Z10 C14 + C23 C24 C25 J2 Z7 Z9 Z11 Z13 Z15 C26 Z17 T1 Z19 RF OUTPUT T2 C22 Z1 Z2* Z3* Z4, Z5 Z6, Z7, Z8, Z9 Z10, Z11 0.175″ x 0.082″ Microstrip 1.461″ x 0.082″ Microstrip 0.080″ x 0.082″ Microstrip 0.133″ x 0.193″ Microstrip 0.500″ x 0.518″ Microstrip 0.102″ x 0.253″ Microstrip Z12, Z13 Z14, Z15 Z16*, Z17* Z18 Z19 0.206″ x 0.253″ Microstrip 0.116″ x 0.253″ Microstrip 0.035″ x 0.253″ Microstrip 0.275″ x 0.082″ Microstrip 0.845″ x 0.082″ Microstrip *Line length includes microstrip bends. Figure 2. MRF6VP11KHR6 Test Circuit Schematic Table 5. MRF6VP11KHR6 Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 95 Ω, 100 MHz Long Ferrite Bead 2743021447 Fair--Rite C1 47 μF, 50 V Electrolytic Capacitor 476KXM050M Illinois Cap C2 22 μF, 35 V Tantalum Capacitor T491X226K035AT Kemet C3 10 μF, 35 V Tantalum Capacitor T491D106K035AT Kemet C4, C9, C17 10K pF Chip Capacitors ATC200B103KT50XT ATC C5, C16 20K pF Chip Capacitors ATC200B203KT50XT ATC C6, C15 0.1 μF, 50 V Chip Capacitors CDR33BX104AKYS Kemet C7 2.2 μF, 50 V Chip Capacitor C1825C225J5RAC Kemet C8 0.22 μF, 100 V Chip Capacitor C1825C223K1GAC Kemet C10, C11, C13, C14 1000 pF Chip Capacitors ATC100B102JT50XT ATC C12 18 pF Chip Capacitor ATC100B180JT500XT ATC C18, C19, C20 470 μF, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp C21, C22 47 pF Chip Capacitors ATC100B470JT500XT ATC C23 75 pF Chip Capacitor ATC100B750JT500XT ATC C24, C25 100 pF Chip Capacitors ATC100B101JT500XT ATC C26 33 pF Chip Capacitor ATC100B330JT500XT ATC J1, J2 Jumpers from PCB to T1 and T2 Copper Foil L1 82 nH Inductor 1812SMS--82NJLC CoilCraft L2 47 nH Inductor 1812SMS--47NJLC CoilCraft L3* 10 Turn, 18 AWG Inductor, Hand Wound Copper Wire R1 1 KΩ, 1/4 W Carbon Leaded Resistor MCCFR0W4J0102A50 Multicomp R2 20 Ω, 3 W Chip Resistor CPF320R000FKE14 Vishay T1 Balun TUI--9 Comm Concepts T2 Balun TUO--4 Comm Concepts PCB 0.030″, εr = 2.55 CuClad 250GX--0300--55--22 Arlon *L3 is wrapped around R2. MRF6VP11KHR6 MRF6VP11KGSR5 RF Device Data Freescale Semiconductor, Inc. 3 C1 C19 C2 C3 C17 C16 C15 C4 C5 C6 B1 C20 L1 C14 C7 C8 C9 C18 R1 C10 C11 C13 C21 T1 L3, R2* T2 C24 J2 C25 L2 C12 CUT OUT AREA J1 C23 C22 C26 MRF6VP11KH Rev. 3 * L3 is wrapped around R2. Figure 3. MRF6VP11KHR6 Test Circuit Component Layout MRF6VP11KHR6 MRF6VP11KGSR5 4 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 100 Ciss ID, DRAIN CURRENT (AMPS) C, CAPACITANCE (pF) 1000 Coss 100 Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc Crss 10 0 10 20 30 40 10 TC = 25°C 1 50 TJ = 175°C TJ = 150°C 1 1 100 10 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Note: Each side of device measured separately. Note: Each side of device measured separately. Figure 4. Capacitance versus Drain--Source Voltage Figure 5. DC Safe Operating Area 80 26 70 Gps 25 60 24 50 23 40 ηD 22 30 21 20 VDD = 50 Vdc, IDQ = 150 mA, f = 130 MHz Pulse Width = 100 μsec, Duty Cycle = 20% 20 10 100 1000 65 63 62 P1dB = 60.57 dBm (1140.24 W) 61 Actual 60 59 58 VDD = 50 Vdc, IDQ = 150 mA, f = 130 MHz Pulse Width = 100 μsec, Duty Cycle = 20% 57 10 2000 Ideal P3dB = 61.23 dBm (1327.39 W) 64 Pout, OUTPUT POWER (dBm) 27 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) TJ = 200°C 56 30 31 32 33 34 35 36 37 38 39 Pout, OUTPUT POWER (WATTS) PEAK Pin, INPUT POWER (dBm) PEAK Figure 6. Power Gain and Drain Efficiency versus Output Power Figure 7. Output Power versus Input Power 28 32 28 Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) IDQ = 6000 mA 3600 mA 1500 mA 750 mA 375 mA 24 150 mA 20 24 20 VDD = 30 V 40 V 35 V 16 10 100 1000 2000 12 50 V IDQ = 150 mA, f = 130 MHz Pulse Width = 100 μsec Duty Cycle = 20% VDD = 50 Vdc, f = 130 MHz Pulse Width = 100 μsec, Duty Cycle = 20% 16 45 V 0 200 400 600 800 1000 1200 1400 Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK Figure 8. Power Gain versus Output Power Figure 9. Power Gain versus Output Power 1600 MRF6VP11KHR6 MRF6VP11KGSR5 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS Gps, POWER GAIN (dB) Pout, OUTPUT POWER (dBm) 25_C 85_C 55 VDD = 50 Vdc IDQ = 150 mA f = 130 MHz Pulse Width = 100 μsec Duty Cycle = 20% 50 45 20 25 30 40 35 25_C 25 50 24 Gps 23 VDD = 50 Vdc IDQ = 150 mA f = 130 MHz Pulse Width = 100 μsec Duty Cycle = 20% 22 20 10 1000 100 20 10 2000 Figure 11. Power Gain and Drain Efficiency versus Output Power 0.18 108 0.16 VDD = 50 Vdc Pout = 1000 W CW ηD = 72% 0.12 D = 0.7 0.1 PD D = 0.5 0.08 0.06 t2 TC = Case Temperature ZθJC = Thermal Impedance (from graph) PD = Peak Power Dissipation t1 = Pulse Width; t2 = Pulse Period D = Duty Factor = t1/t2 TJ (peak) = PD * ZθJC + TC D = 0.3 D = 0.1 0 0.00001 0.0001 t1 0.001 0.01 0.1 1 RECTANGULAR PULSE WIDTH (S) Figure 12. Transient Thermal Impedance 10 MTTF (HOURS) 0.14 0.02 30 Pout, OUTPUT POWER (WATTS) PEAK Figure 10. Output Power versus Input Power ZθJC, THERMAL IMPEDANCE (°C/W) 40 ηD 21 45 60 85_C Pin, INPUT POWER (dBm) PEAK 0.04 70 26 TC = --30_C 60 80 TC = --30_C ηD, DRAIN EFFICIENCY (%) 27 65 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) Note: MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at freescale.com/RFpower. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. For Pulse applications or CW conditions, use the MTTF calculator referenced above. Figure 13. MTTF versus Junction Temperature -- CW MRF6VP11KHR6 MRF6VP11KGSR5 6 RF Device Data Freescale Semiconductor, Inc. f = 130 MHz Zsource Zo = 10 Ω f = 130 MHz Zload VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak f MHz Zsource Ω Zload Ω 130 1.58 + j6.47 4.6 + j1.85 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test -- -Z source Output Matching Network + Z load Figure 14. Series Equivalent Source and Load Impedance MRF6VP11KHR6 MRF6VP11KGSR5 RF Device Data Freescale Semiconductor, Inc. 7 PACKAGE DIMENSIONS MRF6VP11KHR6 MRF6VP11KGSR5 8 RF Device Data Freescale Semiconductor, Inc. MRF6VP11KHR6 MRF6VP11KGSR5 RF Device Data Freescale Semiconductor, Inc. 9 MRF6VP11KHR6 MRF6VP11KGSR5 10 RF Device Data Freescale Semiconductor, Inc. MRF6VP11KHR6 MRF6VP11KGSR5 RF Device Data Freescale Semiconductor, Inc. 11 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Jan. 2008 • Initial Release of Data Sheet Description 1 Apr. 2008 • Corrected description and part number for the R1 resistor and updated R2 resistor to latest RoHS compliant part number in Table 5, Test Circuit Component Designations and Values, p. 3. • Added Fig. 12, Maximum Transient Thermal Impedance, p. 6 2 July 2008 • Added MTTF CW graph, Fig. 13, MTTF versus Junction Temperature, p. 6 3 Sept. 2008 • Added Note to Fig. 4, Capacitance versus Drain--Source Voltage, to denote that each side of device is measured separately, p. 5 • Updated Fig. 5, DC Safe Operating Area, to clarify that measurement is on a per--side basis, p. 5 • Corrected Fig. 13, MTTF versus Junction Temperature – CW, to reflect the correct die size and increased the MTTF factor accordingly, p. 6 • Corrected Fig. 14, MTTF versus Junction Temperature – Pulsed, to reflect the correct die size and increased the MTTF factor accordingly, p. 6 4 Dec. 2008 • Fig. 15, Series Equivalent Source and Load Impedance, corrected Zsource copy to read “Test circuit impedance as measured from gate to gate, balanced configuration” and Zload copy to read “Test circuit impedance as measured from drain to drain, balanced configuration”, p. 7 5 July 2009 • Added 1000 W CW thermal data at 100 MHz to Thermal Characteristics table, p. 1 • Changed “EKME630ELL471MK25S” part number to “MCGPR63V477M13X26--RH”, changed R1 Description from “1 KΩ, 1/4 W Axial Leaded Resistor” to “1 KΩ, 1/4 W Carbon Leaded Resistor” and “CMF601000R0FKEK” part number to “MCCFR0W4J0102A50”, Table 5, Test Circuit Component Designations and Values, p. 3 • Corrected Fig. 13, MTTF versus Junction Temperature – CW, to reflect change in Drain Efficiency from 70% to 72%, p. 6 • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Documentation, Tools and Software, p. 20 6 Dec. 2009 • Device frequency range improved from 10--150 MHz to 1.8--150 MHz, p. 1 • Reporting of pulsed thermal data now shown using the ZθJC symbol, Table 2. Thermal Characteristics, p. 1 7 Apr. 2010 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1 8 Sept. 2012 • Added part number MRF6VP11KGSR5, p. 1 • Added 2282--02 (NI--1230S--4 Gull) package isometric, p. 1, and Mechanical Outline, p. 10, 11 • Table 3, ESD Protection Characteristics: added the device’s ESD passing level as applicable to each ESD class, p. 2 • Modified figure titles and/or graph axes labels to clarify application use, p. 5, 6 • Fig. 12, Transient Thermal Impedance: graph updated to show correct CW operation, p. 6 • Fig. 13, MTTF versus Junction Temperature – CW: MTTF end temperature on graph changed to match maximum operating junction temperature, p. 6 • Fig. 14, MTTF versus Junction Temperature -- Pulsed removed, p. 6. Refer to the device’s MTTF Calculator available at freescale.com/RFpower. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. MRF6VP11KHR6 MRF6VP11KGSR5 12 RF Device Data Freescale Semiconductor, Inc. How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale, the Freescale logo, AltiVec, C--5, CodeTest, CodeWarrior, ColdFire, C--Ware, Energy Efficient Solutions logo, Kinetis, mobileGT, PowerQUICC, Processor Expert, QorIQ, Qorivva, StarCore, Symphony, and VortiQa are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast, BeeKit, BeeStack, ColdFire+, CoreNet, Flexis, MagniV, MXC, Platform in a Package, QorIQ Qonverge, QUICC Engine, Ready Play, SafeAssure, SMARTMOS, TurboLink, Vybrid, and Xtrinsic are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2008--2010, 2012 Freescale Semiconductor, Inc. MRF6VP11KHR6 MRF6VP11KGSR5 Document Number: RF Device Data MRF6VP11KH Rev. 8, 9/2012 Freescale Semiconductor, Inc. 13