2SA1020

2SA1020 Preferred Device One Watt High Current PNP Transistor Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCE VCB VEB IC PD PD TJ, Tstg Value 50 50 5.0 2.0 900 5.0 1.5 12 −55 to +150 Unit Vdc Vdc Vdc Adc mW mW/°C W mW/°C °C http://onsemi.com VOLTAGE AND CURRENT ARE NEGATIVE FOR PNP TRANSISTORS COLLECTOR 2 3 BASE 1 EMITTER PNP THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 125 83.3 Unit °C/W °C/W 1 2 3 TO−92 (TO−226) CASE 29−10 STYLE 14 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM 2SA 1020 AYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 Preferred devices are recommended choices for future use and best overall value. 1 May, 2006 − Rev. 3 Publication Order Number: 2SA1020/D 2SA1020 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 1) (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 V, IC = 0) ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 500 mA, VCE = 2.0 V) (IC = 1.5 A, VCE = 2.0 V) Collector −Emitter Saturation Voltage (IC = 1.0 A, IB = 50 mA) Base −Emitter Saturation Voltage (IC = 1.0 A, IB = 50 mA) SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (Note 3) (IC = 500 mAdc, VCE = 2.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%. 3. fT is defined as the frequency at which |hfe| extrapolates to unity. fT 100 − MHz hFE 70 40 VCE(sat) − VBE(sat) − 0.5 1.2 Vdc 240 − Vdc − V(BR)CEO 50 ICBO − IEBO − 1.0 1.0 mAdc − mAdc Vdc Symbol Min Max Unit ORDERING INFORMATION Device 2SA1020 2SA1020G 2SA1020RLRA 2SA1020RLRAG Package TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) 2000 / Tape & Reel 5000 Units / Box Shipping† †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 2SA1020 250 225 hFE, DC CURRENT GAIN 200 175 150 125 100 75 50 25 0 −10 −20 −50 −100 −200 −500 −1.0 A −2.0 A −4.0 A IC, COLLECTOR CURRENT (mA) −55°C 25°C TJ = 125°C −2.0 VCE = −2.0 V V, VOLTAGE (VOLTS) −1.8 −1.6 −1.4 −1.2 −1.0 −0.8 −0.6 −0.4 −0.2 0 −50 −100 −200 −500 −1.0 A −2.0 A −4.0 A IC, COLLECTOR CURRENT (mA) VCE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2.0 V VBE(sat) @ IC/IB = 10 Figure 1. Typical DC Current Gain Figure 2. On Voltages VCE, COLLECTOR−EMITTER VOLTAGE (V) −1.0 IC, COLLECTOR CURRENT (A) −0.9 −0.8 −0.7 −0.6 −0.5 −0.4 −0.3 −0.2 −0.1 IC = −500 mA IC = −10 mA IC = −100 mA IC = −2.0 A TJ = 25°C −10 −4.0 −2.0 −1.0 −0.5 −0.2 −0.1 −0.05 −0.02 TA = 25°C TC = 25°C 100 ms 1.0 ms −0.01 0 −1.0 −2.0 −5.0 −10 −20 −50 −100 −0.05−0.1−0.2 −0.5−1.0−2.0 −5.0−10 −20 −50 −100−200 −500 IB, BASE CURRENT (mA) VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT Figure 3. Collector Saturation Region Figure 4. Safe Operating Area http://onsemi.com 3 2SA1020 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−10 ISSUE AL A R P F L B SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.135 −−− MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 3.43 −−− K XX G H R 123 D J SECTION X−X NC N STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 4 2SA1020/D