2SA1020

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors JCET 2SA1020 TO-92 TRANSISTOR (PNP) FEATURES Power Amplifier Applications 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -2 A PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 3. BASE ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC =-100µA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC =-10mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -1 µA Emitter cut-off current IEBO VEB=-5V,IC=0 -1 µA hFE(1) VCE=-2V,IC=-0.5A 70 hFE(2) VCE=-2V,IC=-1.5A 40 Collector-emitter saturation voltage VCE(sat) IC=-1A,IB=-50mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-1A,IB=-50mA -1.2 V DC current gain Transition frequency fT Collector output capacitance CLASSIFIC ATION OF h Rank Range www.cj-elec.com Cob 240 VCE=-2V,IC=-500mA 100 MHz VCB=-10V,IE=0,f=1MHz 40 pF FE(1) O Y 70-140 120-240 1 A,Jan,2016 Typical Characteristics hFE Static Characteristic -1.0 400 COMMON EMITTER Ta=25℃ —— IC COMMON EMITTER VCE=-2V -5mA -0.8 -4mA hFE DC CURRENT GAIN COLLECTOR CURRENT -3mA -0.6 -2.5mA -2mA -0.4 -1.5mA -1mA -0.2 Ta=100℃ 300 -3.5mA IC (A) -4.5mA Ta=25℃ 200 100 IB=-0.5mA -0.0 -0 -2 -4 -6 -8 COLLECTOR-EMITTER VOLTAGE VCEsat -0.6 VCE 0 -0.01 -10 (V) IC —— VBEsat -1.4 —— IC -2 -1 -2 IC BASE-EMITTER SATURATION VOLTAGE VBEsat (V) -1.2 -0.4 Ta=100℃ -0.2 Ta=25℃ -0.0 -0.01 -0.1 -1 COLLECTOR CURRENT IC -2 IC -1.0 Ta=25℃ -0.8 Ta=100℃ -0.6 -0.4 -0.01 -2 (A) -0.1 COLLECTOR CURRENT —— VBE 1000 Cob/ Cib —— IC (A) VCB/ VEB COMMON EMITTER VCE=-2V -1 f=1MHz IE=0/ IC=0 Cib Ta=25℃ (pF) (A) CAPACITANCE Ta=100℃ Ta=25℃ -0.1 -0.01 -0.2 -0.4 100 Cob C IC COLLECTOR CURRENT -1 (A) β=20 β=20 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) -0.1 COLLECTOR CURRENT -0.6 -0.8 -1.0 1 -0.1 -1.2 BASE-EMMITER VOLTAGE VBE (V) Pc —— 10 -1 REVERSE VOLTAGE -10 V -20 (V) Ta 750 COLLECTOR POWER DISSIPATION Pc (mW) 625 500 375 250 125 0 0 25 50 75 AMBIENT TEMPERATURE www.cj-elec.com 100 Ta 125 150 (℃) 2 A,Jan,2016 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 3 A,Jan,2016 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP4 A,Jan,2016