AFGY160T65SPD-B4

Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 160 A AFGY160T65SPD-B4 www.onsemi.com Features • • • • • • • • • • AEC−Q101 Qualified and PPAP Capable Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−Efficient Tight Parameter Distribution High Input Impedance 100% of the Parts are Dynamically Tested Short Circuit Ruggedness > 6 ms @ 25°C Copacked with Soft, Fast Recovery Extremefast Diode This Device is Pb−Free, Halogen Free/BFR Free and are RoHS Compliant C G E Benefits • Very Low Conduction and Switching Losses for a High Efficiency • • • Operation in Various Applications Rugged Transient Reliability Outstanding Parallel Operation Performance with Balance Current Sharing Low EMI C E TO−247−3LD CASE 340CU MARKING DIAGRAM Applications • • • • G Traction Inverter for HEV/EV Auxiliary DC/AC Converter Motor Drives Other Power−Train Applications Requiring High Power Switch $Y&Z&3&K AFGY160T 65SPD&B $Y &Z &3 &K AFGY160T65SPD &B = ON Semiconductor Logo = Assembly Plant Code = Date Code (Year & Week) = Lot Traceability Code = Specific Device Code = BIN Designator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 June, 2020 − Rev. 2 1 Publication Order Number: AFGY160T65SPD−B4/D AFGY160T65SPD−B4 ABSOLUTE MAXIMUM RATINGS Symbol Ratings Unit VCES Collector to Emitter Voltage 650 V VGES Gate to Emitter Voltage ±20 V Transient Gate to Emitter Voltage ±30 V Collector Current @ TC = 25°C (Note 1) 240 A Collector Current @ TC = 100°C 220 A IC INominal Parameter Nominal Current 160 A ICM Pulsed Collector Current 480 A IFM Diode Forward Current @ TC = 25°C (Note 1) 240 A Diode Forward Current @ TC = 100°C 188 A Maximum Power Dissipation @ TC = 25°C 882 W Maximum Power Dissipation @ TC = 100°C 441 W PD SCWT Short Circuit Withstand Time @ TC = 25°C 6 ms DV/Dt Voltage Transient Ruggedness (Note 2) 10 V/ns TJ Operating Junction Temperature −55 to +175 °C Tstg Storage Temperature Range −55 to +175 °C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Limited to bondwire. 2. VCC = 400 V, VGE = 15 V, ICE = 480 A, Inductive load. THERMAL CHARACTERISTICS Symbol Typ. Max. Units RqJC (IGBT) Thermal Resistance, Junction to Case − 0.17 °C/W RqJC (Diode) Thermal Resistance, Junction to Case − 0.32 °C/W Thermal Resistance, Junction to Ambient − 40 °C/W RqJA Parameter PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Bin Designator Packing Type Qty per Tube/Reel* AFGY160T65SPDA AFGY160T65SPD−B4 A Tube 30 AFGY160T65SPDB AFGY160T65SPD−B4 B Tube 30 AFGY160T65SPDC AFGY160T65SPD−B4 C Tube 30 AFGY160T65SPDD AFGY160T65SPD−B4 D Tube 30 *Generally all tubes in one box will belong to the same bin. In rare and unusual cases there may be tubes from more than one bin inside one box. Such mixing would not be considered a quality excursion. The primary container quantity (MPQ) for these binning products is 30 units and therefore partial box shipment can be expected. www.onsemi.com 2 AFGY160T65SPD−B4 ELECTRICAL CHARACTERISTICS OF THE IGBT (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA 650 − − V Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 1 mA − 0.6 − V/°C ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V − − 40 mA IGES G−E Leakage Current VGE = VGES, VCE = 0 V − − ±250 nA BVCES DBVCES/ DTJ ON CHARACTERISTICS VGE(th)A G−E Threshold (Bin A) Ic = 160 mA; VCE = VGE 5.15 5.5 6.3 V VCE(sat)A Collector to Emitter Saturation Voltage (Bin A) Ic = 160 A; VGE = 15 V 1.5 1.6 1.67 V VGE(th)B G−E Threshold (Bin B) Ic = 160 mA; VCE = VGE 5.15 5.5 6.3 V VCE(sat)B Collector to Emitter Saturation Voltage (Bin B) Ic = 160 A; VGE = 15 V 1.57 1.64 2.05 V VGE(th)C G−E Threshold (Bin C) Ic = 160 mA; VCE = VGE 4.3 5.3 5.65 V VCE(sat)C Collector to Emitter Saturation Voltage (Bin C) Ic = 160 A; VGE = 15 V 1.5 1.6 1.67 V VGE(th)D G−E Threshold (Bin D) Ic = 160 mA; VCE = VGE 4.3 5.3 5.65 V VCE(sat)D Collector to Emitter Saturation Voltage (Bin D) Ic = 160 A; VGE = 15 V 1.57 1.64 2.05 V VGE(th) G−E Threshold Ic = 160 mA; VCE = VGE 4.3 5.3 6.3 V VCE(sat) Collector to Emitter Saturation Voltage Ic = 160 A; VGE = 15 V − 1.6 2.05 V Ic = 160 A; VGE = 15 V; TJ = 175°C − 2.15 − V VCE = 30 V, VGE = 0 V, f = 1 MHz − 6710 − pF − 450 − pF DYNAMIC CHARACTERISTICS Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance RG Internal Gate Resistance − 55 − pF f = 1 MHz − 3 − W VCC = 400 V, IC = 160 A, RG = 5 W, VGE = 15 V, Inductive Load, TJ = 25°C − 53 − ns − 197 − ns Turn-Off Delay Time − 98 − ns SWITCHING CHARACTERISTICS Td(on) Tr Td(off) Tf Turn-On Delay Time Rise Time Fall Time − 141 − ns Eon Turn-On Switching Loss − 12.4 − mJ Eoff Turn-Off Switching Loss − 5.7 − mJ Ets Total Switching Loss − 18.1 − mJ Td(on) Turn-On Delay Time − 52 − ns − 236 − ns Turn-Off Delay Time − 104 − ns Fall Time − 204 − ns Eon Turn-On Switching Loss − 21 − mJ Eoff Turn-Off Switching Loss − 8.5 − mJ Ets Total Switching Loss − 29.5 − mJ Tr Td(off) Tf Rise Time VCC = 400 V, IC = 160 A, RG = 5 W, VGE = 15 V, Inductive Load, TJ = 175°C www.onsemi.com 3 AFGY160T65SPD−B4 ELECTRICAL CHARACTERISTICS OF THE IGBT (TJ = 25°C unless otherwise noted) (continued) Symbol Parameter Test Conditions Min. Typ. Max. Unit − 163 245 nC − 50 − nC − 49 − nC SWITCHING CHARACTERISTICS Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCE = 400 V, IC = 160 A, VGE = 15 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ELECTRICAL CHARACTERISTICS OF THE DIODE (TJ = 25°C unless otherwise noted) Symbol VFM Erec Trr Qrr Parameter Min. Typ. Max. Unit TJ = 25°C − 1.4 1.7 V TJ = 175°C − 1.35 − TJ = 25°C − 598 − TJ = 175°C − 4000 − Diode Reverse Recovery Time TJ = 25°C − 132 − TJ = 175°C − 245 − Diode Reverse Recovery Charge TJ = 25°C − 3.3 − TJ = 175°C − 12.5 − Diode Forward Voltage Reverse Recovery Energy Test Conditions IF = 160 A VCE = 400 V, IF = 160 A, DIF/Dt = 1000 A/ms mJ ns mC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 AFGY160T65SPD−B4 TYPICAL PERFORMANCE CHARACTERISTICS Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics Figure 3. Typical Saturation Voltage Characteristics Figure 4. Transfer Characteristics Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 6. Saturation Voltage vs. VGE www.onsemi.com 5 AFGY160T65SPD−B4 TYPICAL PERFORMANCE CHARACTERISTICS Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics Figure 11. SOA Characteristics Figure 12. Turn Off Switching SOA Characteristics www.onsemi.com 6 AFGY160T65SPD−B4 TYPICAL PERFORMANCE CHARACTERISTICS Figure 13. Turn−on Characteristics vs. Gate Resistance Figure 14. Turn−off Characteristics vs. Gate Resistance Figure 15. Turn−on Characteristics vs. Collector Current Figure 16. Turn−off Characteristics vs. Collector Current 100 50 Common Emitter V GE = 15V, R G = 5 W o Eon Switching Loss [mJ] Switching Loss [mJ] TC = 25 C 10 Eoff Common Emitter VCC = 400V, V GE = 15V I C = 160A o TC = 175 C 10 E on E off 1 o TC = 25 C o 1 TC = 175 C 0 10 20 30 40 Gate Resistance, R G [ W] 0.1 50 Figure 17. Switching Loss vs. Gate Resistance 0 20 40 60 80 100 120 Collector Current, IC [A] 140 160 Figure 18. Switching Loss vs. Collector Current www.onsemi.com 7 AFGY160T65SPD−B4 TYPICAL PERFORMANCE CHARACTERISTICS Figure 19. Forward Characteristics Figure 20. Reverse Current Figure 21. Stored Charge Figure 22. Reverse Recovery Time Figure 23. Collector to Emitter Breakdown Voltage vs. Junction Temperature www.onsemi.com 8 AFGY160T65SPD−B4 TYPICAL PERFORMANCE CHARACTERISTICS Figure 24. Transient Thermal Impedance of IGBT Figure 25. Transient Thermal Impedance of Diode www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CU ISSUE B DATE 28 OCT 2021 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXXXX XXXXXXXXX DOCUMENT NUMBER: DESCRIPTION: XXXX A Y WW ZZ 98AON13773G TO−247−3LD = Specific Device Code = Assembly Site Code = Year = Work Week = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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