FDMA430NZ

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Other names and brands may be claimed as the property of others. Single N-Channel 2.5V Specified PowerTrench® MOSFET 30V, 5.0A, 40m: Features General Description „ RDS(on) = 40m: @ VGS = 4.5 V, ID = 5.0A This Single N-Channel MOSFET has been designed using ON Semiconductor’s advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe. „ RDS(on) = 50m:@ VGS = 2.5 V, ID = 4.5A Applications „ HBM ESD protection level > 2.5k V typical (Note 3) „ Li-lon Battery Pack „ Free from halogenated compounds and antimony oxides „ Low Profile-0.8mm maximum-in the new package MicroFET 2x2 mm „ RoHS Compliant Pin 1 D D G Drain Source D D S 4 3 G D 5 2 D D 6 1 D Bottom Drain Contact S MicroFET 2X2 (Bottom View) Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS Drain-Source Voltage Ratings 30 Units V VGSS Gate-Source Voltage r12 V Drain Current 5.0 ID Parameter -Continuous -Pulsed (Note 1a) (Note 1a) (Note 1b) Power dissipation (Steady State) PD TJ, TSTG A 20 Operating and Storage Junction Temperature Range 2.4 0.9 -55 to +150 W o C Thermal Characteristics RTJA Thermal Resistance, Junction-to-Ambient (Note 1a) 52 RTJA Thermal Resistance, Junction-to-Ambient (Note 1b) 145 oC/W Package Marking and Ordering Information Device Marking 430 Device FDMA430NZ ©2009 Semiconductor Components Industries, LLC. October-2017, Rev. 2 Reel Size 7” 1 Tape Width 8 mm Quantity 3000 units Publication Order Number: FDMA430NZ/D FDMA430NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET FDMA430NZ Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V , ID = 250PA 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = 250PA, Referenced to 25°C 30 V IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V, 1 PA IGSS Gate-Body Leakage, VGS = r12V, VDS = 0V r10 PA 1.5 V 25.2 mV/°C On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250PA 'VGS(th) 'TJ Gate Threshold Voltage Temperature Coefficient ID = 250PA, Referenced to 25°C -3.2 VGS = 4.5V, ID = 5.0A 23.6 40 VGS = 4.0V, ID = 5.0A 23.9 41 VGS = 3.1V, ID =4.5A 25.4 43 VGS = 2.5V, ID =4.5A 27.6 50 VGS = 4.5V, ID =5.0A, TJ =150°C 37.0 61 VDS = 5V, ID =5.0A 25.6 VDS = 10V, VGS =0V, f = 1.0MHz 600 800 pF 110 150 pF 75 115 pF f = 1.0MHz 3.5 8.3 17 ns ID = 1A VDD = 10V, VGS = 4.5V, RGEN = 6: 7.1 15 ns ns RDS(ON) gFS Static Drain-Source On-Resistance Forward Transconductance 0.6 0.81 mV/°C m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance : Switching Characteristics (Note 2) td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time 18.1 37 tf Turn-Off Fall Time 6.0 12 ns Qg Total Gate Charge 7.3 11 nC Qgs Gate-Source Charge 0.8 2 nC Qgd Gate-Drain Charge 1.9 3 nC 2.0 A VDS = 10V, ID = 5.0A, VGS = 4.5V Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 2.0A trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge IF = 5.0A, di/dt = 100A/Ps 0.69 1.2 V 17 ns 5 nC Notes: 1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. a. 52 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 145 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 Ps, Duty Cycle < 2.0% 3. The diode connected between the gate and the source serves only as proection against ESD. No gate overvoltage rating is implied. www.onsemi.com 2 FDMA430NZ Single N-Channel 2.5V specified PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted ID, DRAIN CURRENT(A) VGS = 4.5V VGS = 2.5V 30 VGS = 3.0V PULSE DURATION=300PS DUTY CYCLE=2.0% MAX 20 VGS = 2.0V 10 VGS = 1.5V 0 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE(V) 4 1.6 VGS= 2.0V 1.5 2.5V 1.4 3.0V 1.3 3.5V 1.2 1.1 4.5V 1.0 0.9 0.8 5 1.6 15 1.4 20 25 30 35 40 0.08 PULSE DURATION = 300Ps DUTY CYCLE = 2.0% MAX ID = 5.0A VGS = 4.5V 1.2 1.0 0.8 0.6 -80 -40 0 40 80 120 0.07 ID = 2.5A 0.06 0.05 TJ = 125oC 0.04 0.03 TJ = 25oC 0.02 1 160 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) O TJ,JUNCTION TEMPERATURE( C) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Votlage 100 30 PULSE DURATION = 300Ps DUTY CYCLE = 2.0% MAX 25 IS, REVERSE CURRENT(A) ID, DRAIN CURRENT (A) 10 Figure 2. On-Resistance vs Drain Current and Gate Voltage RDS(on), DRAIN TO SOURCE ON-RESISTANCE (OHM) NORMALIZED 1.7 ID, DRAIN CURRENT(A) Figure 1. On Region Characteristics DRAIN TO SOURCE ON-RESISTANCE NORMOLIZED DRAIN to SOURCE ON-RESISTANCE 1.8 40 VDS = 5V 20 15 10 o TJ = 25 C o TJ = 125 C 5 10 VGS = 0V 1 0.1 o TJ = 125 C o TJ = 25 C 0.01 o TJ = -55 C 1E-3 TJ = -55oC 0 0.5 1.0 1.5 2.0 2.5 1E-4 0.0 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWAD VOLTAGE(V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 3 1.2 FDMA430NZ Single N-Channel 2.5V specified PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted ID =5.0A Ciss 4 CAPACITANCE(PF) VGS,GATE-SOURCE VOLTAGE(V) 1000 5 VDS = 15V 3 VDS = 10V 2 100 VDS = 20V 1 Crss f = 1MHZ VGS = 0V 10 0.1 0 2 0 4 6 8 Qg,GATE CHARGE (nC) 10 100 30 5 ID, DRAIN CUREENT(A) 10us 10 100us 1ms 1 0.1 1 10 VDS,DRAIN TO SOURCE VOLTAGE(V) Figure 8. Capacitance vs Drain to Source Voltage Figure 7. Gate Charge Characteristics ID, DRAIN CURRENT (A) Coss 10ms OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) 0.01 0.1 100ms 1s 10s SINGLE PULSE TJ=MAX RATED TA=25oC 4 VGS=4.5V 3 VGS=2.5V 2 1 DC 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 25 50 Figure 9. Safe Operating Area RTJA=145OC/W 50 75 100 125 TA, AMBIENT TEMPERATURE(OC) 150 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature P(PK), PEAK TRANSIENT POWER (W) 200 100 VGS = 10V TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 10 150 – T I= I SINGLE PULSE 25 A -------------------125 1 0.5 -4 10 -3 10 -2 10 -1 10 t, PULSE WIDTH (s) 0 10 1 10 Figure 11. Single Pulse Maximum Power Dissipation www.onsemi.com 4 2 10 3 10 FDMA430NZ Single N-Channel 2.5V specified PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER Normalized Thermal Impedance, ZTJA 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA RTJA = 145oC SINGLE PULSE 0.01 -4 10 -3 10 -2 10 -1 10 0 10 t, RECTANGULAR PULSE DURATION(s) Figure 12. Transient Thermal Response Curve www.onsemi.com 5 1 10 2 10 3 10 FDMA430NZ Single N-Channel 2.5V specified PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMA43 0NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 6 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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