FDMA86108LZ

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMA86108LZ Single N-Channel PowerTrench® MOSFET 100 V, 2.2 A, 243 mΩ Features General Description Max rDS(on) = 243 mΩ at VGS = 10 V, ID = 2.2 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low rDS(on) and gate charge provide excellent switching performance. Max rDS(on) = 366 mΩ at VGS = 4.5 V, ID = 1.8 A Low Profile - 0.8 mm Maximum in the New Package MicroFET 2x2 mm Application Free from Halogenated Compounds and Antimony Oxides DC – DC Buck Converters RoHS Compliant Pin 1 D D G Drain Source D S D MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous TA = 25 °C -Pulsed PD TJ, TSTG (Note 1a) (Note 3) Ratings 100 Units V ±20 V 2.2 6 Power Dissipation TA = 25 °C (Note 1a) 2.4 Power Dissipation TA = 25 °C (Note 1b) 0.9 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 52 RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 145 °C/W Package Marking and Ordering Information Device Marking 108 Device FDMA86108LZ ©2015 Fairchild Semiconductor Corporation FDMA86108LZ Rev.1.0 Package MicroFET 2X2 1 Reel Size 7” Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com FDMA86108LZ Single N-Channel PowerTrench® MOSFET March 2015 Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±10 μA 3.0 V 100 V 74 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance 1.0 2.2 -5 mV/°C VGS = 10 V, ID = 2.2 A 188 243 VGS = 4.5 V, ID = 1.8 A 275 366 VGS = 10 V, ID = 2.2 A, TJ = 125 °C 345 446 VDD = 5 V, ID = 2.2 A 3.7 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz 0.1 116 163 pF 23 35 pF 1 5 pF 1.0 3.0 Ω Switching Characteristics td(on) Turn-On Delay Time 4.2 10 ns tr Rise Time 1.7 10 ns td(off) Turn-Off Delay Time 7.6 15 ns tf Fall Time 1.7 10 ns Qg(TOT) Total Gate Charge VGS = 0 V to 10 V 2.1 3.0 nC Qg(TOT) Total Gate Charge 1.1 1.6 Qgs Gate to Source Charge VGS = 0 V to 4.5 V VDD = 50 V, ID = 2.2 A Qgd Gate to Drain “Miller” Charge VDD = 50V, ID = 2.2 A, VGS = 10 V, RGEN = 6 Ω nC 0.5 nC 0.5 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.2 A (Note 2) IF = 2.2 A, di/dt = 100 A/μs 0.9 1.2 V 32 51 ns 20 32 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. a. 52 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 145 °C/W when mounted on a minimum pad of 2 oz copper. SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Pulse Id measured at 250μs, refer to Fig 11 SOA graph for more details. ©2015 Fairchild Semiconductor Corporation FDMA86108LZ Rev.1.0 2 www.fairchildsemi.com FDMA86108LZ Single N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted VGS = 10 V VGS = 6 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 6 5 VGS = 4.5 V 4 3 VGS = 4 V 2 0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 3.5 V 1 0 1 2 3 4 5 5 VGS = 3.5 V VGS = 4 V 4 VGS = 4.5 V 3 2 VGS = 6 V 1 0 0 1 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 800 ID = 2.2 A VGS = 10 V 6 IS, REVERSE DRAIN CURRENT (A) 3 TJ = 150 oC 2 TJ = 25 oC 1 TJ = -55 oC 3 4 TJ = 125 oC 400 200 TJ = 25 oC 3 6 4 2 5 6 4 5 6 7 8 9 10 1 TJ = 150 oC 0.1 TJ = 25 oC 0.01 TJ = -55 oC 0.001 0.0 7 VGS = 0 V 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current ©2015 Fairchild Semiconductor Corporation FDMA86108LZ Rev.1.0 6 Figure 4. On-Resistance vs. Gate to Source Voltage VDS = 5 V 1 5 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 5 4 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID = 2.2 A 600 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On Resistance vs. Junction Temperature ID, DRAIN CURRENT (A) 3 Figure 2. Normalized On-Resistance vs. Drain Current and Gate Voltage 2.2 0 2 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 2.0 VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 3 1.2 www.fairchildsemi.com FDMA86108LZ Single N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 200 ID = 2.2 A 100 VDD = 25 V 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 50 V 6 VDD = 75 V 4 2 Ciss Coss 10 1 Crss f = 1 MHz VGS = 0 V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0.1 0.1 1 Figure 7. Gate Charge Characteristics 20 10 10 μs 10 ID, DRAIN CURRENT (A) Ig, GATE LEAKAGE CURRENT (A) VGS = 0 V -2 100 Figure 8. Capacitance vs. Drain to Source Voltage -1 10 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) -3 10 -4 10 -5 10 TJ = 125 oC -6 10 -7 10 TJ = 25 oC -8 10 0.1 0.01 100 μs 0 5 10 15 20 25 30 SINGLE PULSE TJ = MAX RATED RθJA = 145 oC/W 0.001 0.1 35 CURVE BENT TO MEASURED DATA 1 10 100 400 VDS, DRAIN to SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 10. Forward Bias Safe Operating Area Figure 9. Gate Leakage Current vs. Gate to Source Voltage P(PK), PEAK TRANSIENT POWER (W) 1 ms 10 ms 100 ms 1s 10 s DC THIS AREA IS LIMITED BY rDS(on) TA = 25 oC -9 10 1 2000 1000 SINGLE PULSE RθJA = 145 oC/W TA = 25 oC 100 10 1 0.1 -5 10 -4 10 -3 10 -2 -1 10 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Single Pulse Maximum Power Dissipation ©2015 Fairchild Semiconductor Corporation FDMA86108LZ Rev.1.0 4 www.fairchildsemi.com FDMA86108LZ Single N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.001 0.0001 -5 10 NOTES: SINGLE PULSE ZθJA(t) = r(t) x RθJA RθJA = 145 oC/W Peak TJ = PDM x ZθJA(t) + TA Duty Cycle, D = t1 / t2 -4 10 -3 10 -2 -1 10 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2015 Fairchild Semiconductor Corporation FDMA86108LZ Rev.1.0 5 www.fairchildsemi.com FDMA86108LZ Single N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2.0 0.05 C A B 2X 2.0 1.70 (0.20) 1.00 PIN#1 IDENT 0.05 C TOP VIEW No Traces allowed in this Area 4 6 2X 1.05 2.30 0.10 C 0.47(6X) 0.08 C 1 SIDE VIEW C 0.40(6X) 0.65 RECOMMENDED LAND PATTERN OPT 1 SEATING PLANE (0.15) 3 (0.50) 1.70 PIN #1 IDENT 1 0.45 (0.20) (0.20)4X 3 1.00 6 (6X) 4 (0.50) 1.05 6 4 0.65 1.30 0.10 0.05 BOTTOM VIEW NOTES: A. PACKAGE DOES NOT FULLY CONFORM TO JEDEC MO-229 REGISTRATION B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 2009. D. LAND PATTERN RECOMMENDATION IS EXISTING INDUSTRY LAND PATTERN. E. DRAWING FILENAME: MKT-MLP06Lrev4. (6X) C A B C 0.66 2.30 0.47(6X) 1 0.65 3 0.40(7X) RECOMMENDED LAND PATTERN OPT 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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