Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FDMA86265P
P-Channel PowerTrench® MOSFET
-150 V, -1 A, 1.2 Ω
Features
General Description
Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -1 A
This P-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® process that
has been optimized for the on-state resistance and yet maintain
superior switching performance.
Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.9 A
Low Profile - 0.8 mm maximum in the new package MicroFET
2x2 mm
Very low RDS-on mid voltage P-channel silicon technology
optimised for low Qg
Applications
Active Clamp Switch
This product is optimised for fast switching applications as
well as load switch applications
Load Switch
100% UIL tested
RoHS Compliant
Pin 1
D
D
G
Bottom
Bottom Drain
Drain Contact
Con-
Drain
Source
D
D
D
D
D
D
G
S
S
MicroFET 2X2 (Bottom View)
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
ID
TA = 25 °C
(Note 1a)
-Pulsed
PD
TJ, TSTG
Units
V
±25
V
-1
-2
Single Pulse Avalanche Energy
EAS
Ratings
-150
(Note 3)
6
Power Dissipation
TA = 25 °C
(Note 1a)
2.4
Power Dissipation
TA = 25 °C
(Note 1b)
0.9
Operating and Storage Junction Temperature Range
-55 to + 150
A
mJ
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
52
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
145
°C/W
Package Marking and Ordering Information
Device Marking
265
Device
FDMA86265P
©2014 Semiconductor Components Industries, LLC
FDMA86265P Rev.2
Package
MicroFET 2X2
1
Reel Size
7 ’’
Tape Width
12 mm
Quantity
3000 units
www.onsemi.com
FDMA86265P P-Channel PowerTrench® MOSFET
August 2018
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = -250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = -120 V, VGS = 0 V
-1
μA
IGSS
Gate to Source Leakage Current
VGS = ±25 V, VDS = 0 V
±100
nA
-4
V
-150
V
-125
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250 μA, referenced to 25 °C
VGS = -10 V, ID = -1 A
0.86
rDS(on)
Static Drain to Source On Resistance
VGS = -6 V, ID = -0.9 A
0.95
1.4
VGS = -10 V, ID = -1 A, TJ = 125 °C
1.53
2.2
VDS = -10 V, ID = -1 A
1.9
gFS
Forward Transconductance
-2
-3.2
5
mV/°C
1.2
Ω
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = -75 V, VGS = 0 V,
f = 1 MHz
0.1
158
210
pF
16
25
pF
0.7
5
pF
3
7.5
Ω
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
Total Gate Charge
Qgs
Total Gate Charge
Qgd
Gate to Drain “Miller” Charge
5.8
12
VDD = -75 V, ID = -1 A,
VGS = -10 V, RGEN = 6 Ω
2.2
10
ns
8
16
ns
6.4
13
ns
VGS = 0 V to -10 V V = -75 V,
DD
ID = -1 A
2.8
4
nC
0.8
nC
0.7
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -1 A
IF = -1 A, di/dt = 100 A/μs
(Note 2)
-0.87
-1.3
V
50
80
ns
78
124
nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 52 °C/W when mounted
on a 1 in2 pad of 2 oz copper.
b. 145 °C/W when mounted on a
minimum pad of 2 oz copper.
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; P-ch: L =3 mH, IAS = -2 A, VDD = -150 V, VGS = -10 V.
©2014 Semiconductor Components Industries, LLC
FDMA86265P Rev.2
2
www.onsemi.com
FDMA86265P P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
3.0
2.0
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
VGS = -10 V
VGS = -8 V
1.5
VGS = -6 V
VGS = -5 V
1.0
0.5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = -4.5 V
0.0
0
1
2
3
4
5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
2.5
VGS = -4.5 V
2.0
VGS = -5 V
1.5
VGS = -6 V
1.0
0.5
0.0
0.5
Figure 1. On Region Characteristics
rDS(on), DRAIN TO
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
4000
ID = -1 A
VGS = -10 V
1.8
1.5
2.0
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.2
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = -1 A
3000
2000
TJ = 125 oC
1000
TJ = 25 oC
0
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
4
5
6
7
8
9
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
Figure 3. Normalized On Resistance
vs Junction Temperature
4
-IS, REVERSE DRAIN CURRENT (A)
2.0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
-ID, DRAIN CURRENT (A)
1.0
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
2.0
VGS = -10 V
VGS = -8 V
1.5
VDS = -5 V
TJ = 150 oC
1.0
TJ =
25 oC
0.5
TJ = -55
oC
3
4
5
TJ = 150 oC
0.1
TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.0
0.0
2
VGS = 0 V
1
6
0.2
0.4
0.6
0.8
1.0
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2014 Semiconductor Components Industries, LLC
FDMA86265P Rev.2
3
1.2
www.onsemi.com
FDMA86265P P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
1000
VDD = -75 V
ID = -1 A
Ciss
8
VDD = -50 V
6
CAPACITANCE (pF)
-VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = -100 V
4
100
Coss
10
Crss
1
2
0
0.0
0.5
1.0
1.5
2.0
2.5
f = 1 MHz
VGS = 0 V
0.1
0.1
3.0
1
Figure 7. Gate Charge Characteristics
10
0.8
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
100
Figure 8. Capacitance vs Drain
to Source Voltage
1.0
VGS = -10 V
0.6
VGS = -6 V
0.4
0.2
100 μs
1
1 ms
10 ms
0.1
THIS AREA IS
LIMITED BY rDS(on)
RθJA = 145 oC/W
o
50
TA = 25 oC
75
100
125
0.001
0.1
150
1
o
TA, AMBIENT TEMPERATURE ( C)
CURVE BENT TO
MEASURED DATA
10
100
1s
10 s
DC
500
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Maximum Continuous Drain
Current vs Ambient Temperature
P(PK), PEAK TRANSIENT POWER (W)
100 ms
SINGLE PULSE
TJ = MAX RATED
0.01
RθJA = 52 C/W
0.0
25
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 10. Forward Bias Safe
Operating Area
2000
1000
SINGLE PULSE
RθJA = 145 oC/W
TA = 25 oC
100
10
1
0.5
-5
10
-4
10
-3
10
-2
-1
10
10
1
10
100 1000
t, PULSE WIDTH (sec)
Figure 11. Single Pulse Maximum
Power Dissipation
©2014 Semiconductor Components Industries, LLC
FDMA86265P Rev.2
4
www.onsemi.com
FDMA86265P P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
0.001
0.0005
-5
10
NOTES:
ZθJA(t) = r(t) x RθJA
RθJA = 145 oC/W
Peak TJ = PDM x ZθJA(t) + TA
Duty Cycle, D = t1 / t2
SINGLE PULSE
-4
10
-3
10
-2
-1
10
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
©2014 Semiconductor Components Industries, LLC
FDMA86265P Rev.2
5
www.onsemi.com
FDMA86265P P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMA86265P P-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
2.00
0.10 C
(0.20)
A
1.00
B
2X
2.00
No Traces allowed in
this Area
4
6
1.35
1.05
2.30
(0.475)
0.10 C
Pin #1 location
1
2X
TOP VIEW
3
0.65 TYP
0.40 TYP
RECOMMENDED LAND PATTERN OPT 1
0.8 MAX
0.10 C
(0.20)
0.08 C 0.05
0.00
C
SIDE VIEW
SEATING
PLANE
0.15
1.00
0.80
1
PIN #1 IDENT
6X 0.33
0.20
0.45
0.20
0.50
0.30
1.00
3
6
0.61
0.51
1.05
0.95
0.50
6
1.30
0.35
6X
0.25
0.10
0.05
1.35
0.66
2.30
1.05
4
0.65
4
1
0.65 TYP
C A B
C
3
0.40 TYP
RECOMMENDED LAND PATTERN OPT 2
BOTTOM VIEW
A. DOES NOT FULLY CONFORM TO JEDEC REGISTRATION
MO-229 DATED AUG/2003
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 1994
D. DRAWING FILENAME: MKT-MLP06Lrev3.
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_MLDEB-C06.
©2014 Semiconductor Components Industries, LLC
FDMA86265P Rev.2
6
www.onsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I68
©2014 Semiconductor Components Industries, LLC
FDMA86265P Rev.2
7
www.onsemi.com
FDMA86265P P-Channel PowerTrench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
F-PFS™
®*
®
AX-CAP®*
FRFET®
BitSiC™
Global Power ResourceSM
PowerTrench®
TinyBoost®
GreenBridge™
PowerXS™
Build it Now™
TinyBuck®
Green FPS™
Programmable Active Droop™
CorePLUS™
TinyCalc™
Green FPS™ e-Series™
QFET®
CorePOWER™
TinyLogic®
QS™
Gmax™
CROSSVOLT™
TINYOPTO™
Quiet Series™
GTO™
CTL™
TinyPower™
RapidConfigure™
IntelliMAX™
Current Transfer Logic™
TinyPWM™
ISOPLANAR™
DEUXPEED®
™
TinyWire™
Dual Cool™
Marking Small Speakers Sound Louder
TranSiC™
EcoSPARK®
Saving our world, 1mW/W/kW at a time™
and Better™
TriFault Detect™
EfficentMax™
SignalWise™
MegaBuck™
TRUECURRENT®*
ESBC™
SmartMax™
MICROCOUPLER™
μSerDes™
SMART
START™
MicroFET™
®
Solutions for Your Success™
MicroPak™
SPM®
MicroPak2™
Fairchild®
STEALTH™
UHC®
MillerDrive™
Fairchild Semiconductor®
Ultra FRFET™
SuperFET®
MotionMax™
FACT Quiet Series™
SuperSOT™-3
UniFET™
mWSaver®
FACT®
SuperSOT™-6
OptoHiT™
VCX™
FAST®
SuperSOT™-8
OPTOLOGIC®
VisualMax™
FastvCore™
OPTOPLANAR®
SupreMOS®
VoltagePlus™
FETBench™
SyncFET™
XS™
FPS™
Sync-Lock™
仙童 ™
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
© Semiconductor Components Industries, LLC
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
www.onsemi.com
1
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
www.onsemi.com