FGA25N120FTD

FGA25N120FTD 1200 V, 25 A Field Stop Trench IGBT Features • Field Stop Trench Technology General Description • High Speed Switching Using advanced field stop trench technology, Fairchild®’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche ruggedness. This device is designed for induction heating and microwave oven. • Low Saturation Voltage: VCE(sat) = 1.6 V @ IC = 25 A • High Input Impedance • RoHS Complaint Applications • Induction Heating, Microvewave Oven C G TO-3P E G C E Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC V ± 25 V @ TC = 25oC 50 A Collector Current @ TC = 100oC 25 A 75 A 25 A 313 W Pulsed Collector Current IF Diode continuous Forward current Maximum Power Dissipation Maximum Power Dissipation @ TC = 100oC o @ TC = 25 C @ TC = 100oC 125 Operating Junction Temperature TJ Unit 1200 Collector Current ICM (1) PD Ratings Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds W -55 to +150 o -55 to +150 o 300 o C C C Notes: 1: Repetitiverating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit oC/W RθJC(IGBT) Thermal Resistance, Junction to Case - 0.4 RθJC(Diode) Thermal Resistance, Junction to Case - 1.42 o 40 o RθJA Thermal Resistance, Junction to Ambient ©2008 Fairchild Semiconductor Corporation FGA25N120FTD Rev. C0 - 1 C/W C/W www.fairchildsemi.com FGA25N120FTD 1200 V, 25 A Field Stop Trench IGBT March 2013 Device Marking Device Package Packaging Type FGA25N120FTD FGA25N120FTDTU TO-3PN - Electrical Characteristics of the IGBT Symbol Parameter Max Qty Qty per Tube per Box - 30 TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1200 - - V ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 1 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±250 nA IC = 25mA, VCE = VGE 3.5 6 7.5 V IC = 25A, VGE = 15V - 1.6 2 V IC = 25A, VGE = 15V, TC = 125oC - 1.88 - V - 3830 - pF - 130 - pF - 86 - pF On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time - 48 - ns tr Rise Time - 96 - ns td(off) Turn-Off Delay Time - 210 - ns tf Fall Time - 215 - ns Eon Turn-On Switching Loss - 0.34 - mJ Eoff Turn-Off Switching Loss - 0.90 1.20 mJ VCC = 600V, IC = 25A, RG = 15Ω, VGE = 15V, Inductive Load, TC = 25oC Ets Total Switching Loss - 1.24 - mJ td(on) Turn-On Delay Time - 44 - ns tr Rise Time - 113 - ns td(off) Turn-Off Delay Time - 232 - ns tf Fall Time - 390 - ns Eon Turn-On Switching Loss - 0.38 - mJ Eoff Turn-Off Switching Loss - 1.39 - mJ Ets Total Switching Loss - 1.77 - mJ Qg Total Gate Charge - 160 - nC Qge Gate to Emitter Charge - 30 - nC Qgc Gate to Collector Charge - 78 - nC ©2008 Fairchild Semiconductor Corporation FGA25N120FTD Rev. C0 VCC = 600V, IC = 25A, RG = 15Ω, VGE = 15V, Inductive Load, TC = 125oC VCE = 600V, IC = 25A, VGE = 15V 2 www.fairchildsemi.com FGA25N120FTD 1200 V, 25 A Field Stop Trench IGBT Package Marking and Ordering Information Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge TC = 25°C unless otherwise noted Test Conditions IF = 25A IES =25A, dIES/dt = 200A/µs Min. Typ. Max TC = 25oC - 1.4 1.8 TC = 125oC - 1.42 - TC = 25oC - 770 - o TC = 125 C - 895 - TC = 25oC - 48 - - 50 - TC = 25oC - 18 - o - 23 - TC = ©2008 Fairchild Semiconductor Corporation FGA25N120FTD Rev. C0 125oC TC = 125 C 3 Unit V ns A µC www.fairchildsemi.com FGA25N120FTD 1200 V, 25 A Field Stop Trench IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics 180 180 o 150 20V 17V o TC = 125 C 15V 120 12V 90 60 10V 9V 30 8V 7V 12V 90 60 10V 30 8V 7V 9V VGE = 6V VGE = 6V 0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 10 0 Figure 3. Typical Saturation Voltage Characteristics 2 4 6 8 Collector-Emitter Voltage, VCE [V] 10 Figure 4. Transfer Characteristics 120 120 Common Emitter VCE = 20V Common Emitter VGE = 15V o o TC = 25 C 90 Collector Current, IC [A] Collector Current, IC [A] 15V 120 0 o TC = 125 C 60 30 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 2.7 60 30 3 6 9 12 Gate-Emitter Voltage,VGE [V] 15 Figure 6. Saturation Voltage vs. VGE 20 Common Emitter VGE = 15V 50A 2.4 2.1 25A 1.8 1.5 IC = 10A 1.2 0.9 25 o TC = 125 C 0 Collector-Emitter Voltage, VCE [V] 3.0 TC = 25 C 90 0 5 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] 20V 17V 150 Collector Current, IC [A] TC = 25 C Collector Current, IC [A] Figure 2. Typical Output Characteristics Common Emitter o TC = 25 C 16 12 8 50A 4 25A IC = 10A 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] ©2008 Fairchild Semiconductor Corporation FGA25N120FTD Rev. C0 4 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA25N120FTD 1200 V, 25 A Field Stop Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics 6000 20 Common Emitter 12 8 25A 4 50A 0 3000 Coes 2000 1000 Cres 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 1 20 Figure 9. Gate charge Characteristics 10 Collector-Emitter Voltage, VCE [V] 200 100 Common Emitter o TC = 25 C 10µs 12 VCC = 200V Collector Current, Ic [A] 600V 9 400V 6 3 0 0 30 Figure 10. SOA Characteristics 15 Gate-Emitter Voltage, VGE [V] o TC = 25 C 4000 IC = 10A 0 Common Emitter VGE = 0V, f = 1MHz Cies 5000 16 Capacitance [pF] Collector-Emitter Voltage, VCE [V] o TC = 125 C 50 100 150 Gate Charge, Qg [nC] 100µs 10 1ms 10 ms DC 1 *Notes: o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.1 0.01 200 1 Figure 11. Turn-on Characteristics vs. Gate Resistance 10 100 1000 3000 Collector-Emitter Voltage, VCE [V] Figure 12. Turn-off Characteristics vs. Gate Resistance 5500 500 Common Emitter VCC = 600V, VGE = 15V IC = 25A Switching Time [ns] Switching Time [ns] o tr 100 Common Emitter VCC = 600V, VGE = 15V IC = 25A td(on) o TC = 25 C td(off) o TC = 125 C 1000 tf 100 TC = 25 C o TC = 125 C 10 0 20 40 60 80 Gate Resistance, RG [Ω] ©2008 Fairchild Semiconductor Corporation FGA25N120FTD Rev. C0 50 100 0 20 40 60 80 100 Gate Resistance, RG [Ω] 5 www.fairchildsemi.com FGA25N120FTD 1200 V, 25 A Field Stop Trench IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current Figure 14. Turn-off Characteristics vs. Collector Current 1500 500 Common Emitter VGE = 15V, RG = 10Ω Common Emitter VGE = 15V, RG = 10Ω 1000 o o TC = 25 C TC = 25 C tr TC = 125 C o TC = 125 C Switching Time [ns] Switching Time [ns] o 100 td(on) tf td(off) 100 10 5 10 20 30 40 5 45 10 20 Figure 15. Switching Loss vs. Gate Resistance 40 45 Figure 16. Switching Loss vs. Collector Current 10000 10000 Common Emitter VCC = 600V, VGE = 15V Common Emitter VGE = 15V, RG = 10Ω IC = 25A TC = 25 C o o TC = 25 C o TC = 125 C Switching Loss [µ J] Switching Loss [µ J] 30 Collector Current, IC [A] Collector Current, IC [A] Eoff 1000 Eon 1000 Eon 100 30 200 0 20 40 60 80 Gate Resistance, RG [Ω] Eoff o TC = 125 C 100 0 10 20 30 40 50 Collector Current, IC [A] Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics 100 30 Forward Current, IF [A] Collector Current, IC [A] 10 10 o TJ = 125 C 1 o Safe Operating Area o VGE = 15V, TC = 125 C TC = 25 C o TC = 125 C 1 1 0.1 0.0 10 100 1000 2000 Collector-Emitter Voltage, VCE [V] ©2008 Fairchild Semiconductor Corporation FGA25N120FTD Rev. C0 o TJ = 25 C 6 0.5 1.0 1.5 Forward Voltage, VF [V] 2.0 www.fairchildsemi.com FGA25N120FTD 1200 V, 25 A Field Stop Trench IGBT Typical Performance Characteristics Figure 19. Reverse Recovery Current Figure 20. Stored Charge 30 Stored Recovery Charge, Qrr [µ C] Reverse Recovery Currnet, Irr [A] 60 50 200A/µs 40 di/dt = 100A/µs 30 20 10 15 20 25 Forward Current, IF [A] 20 200A/µs di/dt = 100A/µs 10 0 10 30 15 20 25 30 Forward Current, IF [A] Figure 21. Reverse Recovery Time Reverse Recovery Time, trr [ns] 1200 1000 di/dt = 100A/µs 800 200A/µs 600 400 10 15 20 25 30 Forward Current, IF [A] Figure 22. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.01 0.1 0.05 0.02 0.01 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 ©2008 Fairchild Semiconductor Corporation FGA25N120FTD Rev. C0 PDM single pulse 1E-4 1E-3 0.01 0.1 Rectangular Pulse Duration [sec] 7 1 10 www.fairchildsemi.com FGA25N120FTD 1200 V, 25 A Field Stop Trench IGBT Typical Performance Characteristics FGA25N120FTD 1200 V, 25 A Field Stop Trench IGBT Mechanical Dimensions TO-3PN Dimensions in Millimeters ©2008 Fairchild Semiconductor Corporation FGA25N120FTD Rev. C0 8 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2008 Fairchild Semiconductor Corporation FGA25N120FTD Rev. C0 9 www.fairchildsemi.com FGA25N120FTD 1200 V, 25 A Field Stop Trench IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ FPS™ Sync-Lock™ ® AccuPower™ F-PFS™ ®* AX-CAP®* FRFET® PowerTrench® BitSiC™ Global Power ResourceSM PowerXS™ TinyBoost™ Programmable Active Droop™ Build it Now™ Green Bridge™ TinyBuck™ CorePLUS™ Green FPS™ QFET® TinyCalc™ CorePOWER™ QS™ Green FPS™ e-Series™ TinyLogic® Quiet Series™ CROSSVOLT™ Gmax™ TINYOPTO™ CTL™ GTO™ RapidConfigure™ TinyPower™ Current Transfer Logic™ IntelliMAX™ ™ TinyPWM™ DEUXPEED® ISOPLANAR™ TinyWire™ Dual Cool™ Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™ TranSiC® EcoSPARK® SignalWise™ and Better™ TriFault Detect™ SmartMax™ EfficentMax™ MegaBuck™ TRUECURRENT®* ESBC™ MICROCOUPLER™ SMART START™ µSerDes™ Solutions for Your Success™ MicroFET™ ® SPM® MicroPak™ MicroPak2™ STEALTH™ Fairchild® UHC® SuperFET® MillerDrive™ Fairchild Semiconductor® Ultra FRFET™ MotionMax™ SuperSOT™-3 FACT Quiet Series™ UniFET™ mWSaver™ SuperSOT™-6 FACT® VCX™ SuperSOT™-8 OptoHiT™ FAST® VisualMax™ OPTOLOGIC® SupreMOS® FastvCore™ VoltagePlus™ OPTOPLANAR® SyncFET™ FETBench™ XS™