FGH25T120SMD-F155

IGBT - Field Stop, Trench 1200 V, 25 A FGH25T120SMD Description Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications. www.onsemi.com C Features • • • • • • FS Trench Technology, Positive Temperature Coefficient High Speed Switching Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 A 100% of the Parts Tested for ILM (Note 1) High Input Impedance This Device is Pb−Free and is RoHS Compliant G E E C G Applications • Solar Inverter, Welder, UPS & PFC Applications COLLECTOR (FLANGE) TO−247−3LD CASE 340CH MARKING DIAGRAMS $Y&Z&3&K FGH25T120 SMD $Y &Z &3 &K FGH25T120SMD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2013 May, 2020 − Rev. 4 1 Publication Order Number: FGH25T120SMD/D FGH25T120SMD ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) Symbol Ratings Unit Collector to Emitter Voltage VCES 1200 V Gate to Emitter Voltage VGES ±25 V ±30 V 50 A 25 A ILM 100 A ICM 100 A IF 50 A 25 A Parameter Transient Gate to Emitter Voltage Collector Current TC = 25°C Collector Current TC = 100°C Clamped Inductive Load Current (Note 1) TC = 25°C Pulsed Collector Current (Note 2) Diode Continuous Forward Current TC = 25°C Diode Continuous Forward Current TC = 100°C Diode Maximum Forward Current Maximum Power Dissipation TC = 25°C Maximum Power Dissipation TC = 100°C IC IFM 200 A PD 428 W 214 W Operating Junction Temperature TJ −55 to +175 °C Storage Temperature Range Tstg −55 to +175 °C Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 600 V, VGE = 15 V, IC = 100 A, RG = 23 , Inductive Load 2. Limited by Tjmax THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction to Case, Max. (IGBT) RJC 0.35 °C/W Thermal Resistance, Junction to Case, Max. (Diode) RJC 1.4 °C/W Thermal Resistance, Junction to Ambient, Max. RJA 40 °C/W PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FGH25T120SMD FGH25T120SMD−F155 TO−247−3LD − − 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 250 A 1200 − − V Collector Cut−Off Current ICES VCE = VCES, VGE = 0 V − − 250 A G−E Leakage Current IGES VGE = VGES, VCE = 0 V − − ±400 nA G−E Threshold Voltage VGE(th) IC = 25 mA, VCE = VGE 4.9 6.2 7.5 V Collector to Emitter Saturation Voltage VCE(sat) IC = 25 A, VGE = 15 V, TC = 25°C − 1.8 2.4 V IC = 25 A, VGE = 15 V, TC = 175°C − 1.9 − V ON CHARACTERISTICS www.onsemi.com 2 FGH25T120SMD ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued) Parameter Symbol Test Conditions Min Typ Max Unit − 2800 − pF DYNAMIC CHARACTERISTICS VCE = 30 V, VGE = 0 V, f = 1 MHz Input Capacitance Cies Output Capacitance Coes − 105 − pF Reverse Transfer Capacitance Cres − 60 − pF − 40 − ns − 45 − ns td(off) − 490 − ns SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time td(on) tr Turn−Off Delay Time Fall Time VCC = 600 V, IC = 25 A, RG = 23  VGE = 15 V, Inductive Load, TC = 25°C tf − 12 − ns Turn−On Switching Loss Eon − 1.74 − mJ Turn−Off Switching Loss Eoff − 0.56 − mJ Total Switching Loss Ets − 2.30 − mJ Turn−On Delay Time td(on) − 40 − ns − 48 − ns td(off) − 520 − ns tf − 64 − ns Turn−On Switching Loss Eon − 2.94 − mJ Turn−Off Switching Loss Eoff − 1.09 − mJ Total Switching Loss Ets − 4.03 − mJ Total Gate Charge Qg − 225 − nC Gate to Emitter Charge Qge − 20 − nC Gate to Collector Charge Qgc − 128 − nC Min Typ Max Unit IF = 25 A, TC = 25°C − 2.8 3.7 V IF = 25 A, TC = 175°C − 2.1 − V VR = 600 V, IF = 25 A, diF/dt = 200 A/s, TC = 25°C − 60 − ns − 6.6 − A − 197 − nC − 330 − J Rise Time tr Turn−Off Delay Time Fall Time VCC = 600 V, IC = 25 A, RG = 23  VGE = 15 V, Inductive Load, TC = 175°C VCE = 600 V, IC = 25 A, VGE = 15 V ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted) Parameter Diode Forward Voltage Symbol VFM Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr Reverse Recovery Energy Erec Test Conditions VR = 600 V, IF = 25 A, dIF/dt = 200 A/s, TC = 175°C Diode Reverse Recovery Time trr − 325 − ns Diode Peak Reverse Recovery Current Irr − 13 − A Diode Reverse Recovery Charge Qrr − 2113 − nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH25T120SMD TYPICAL PERFORMANCE CHARACTERISTICS 100 100 80 TC = 175°C 15 V 20 V IC, Collector Current (A) IC, Collector Current (A) TC = 25°C 12 V 60 40 10 V 20 80 15 V 20 V 12 V 60 40 10 V 20 VGE = 8 V VGE = 8 V 0 0.0 2.0 4.0 6.0 8.0 0 10.0 0.0 VCE, Collector−Emitter Voltage (V) IC, Collector Current (A) 3.5 Common Emitter VGE = 15 V TC = 25°C TC = 175°C 80 60 40 20 0 0.0 1.0 2.0 3.0 4.0 3.0 25 A 2.0 IC = 15 A 1.5 0 8 16 VCE, Collector−Emitter Voltage (V) VCE, Collector−Emitter Voltage (V) 100 125 150 175 20 50 A 12 75 Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level IC = 15 A 4 50 TC, Case Temperature (°C) 15 5 10.0 50 A 1.0 25 5.0 Common Emitter TC = 25°C 10 8.0 2.5 Figure 3. Typical Saturation Voltage Characteristics 25 A 6.0 Common Emitter VGE = 15 V VCE, Collector−Emitter Voltage (V) 20 4.0 Figure 2. Typical Output Characteristics Figure 1. Typical Output Characteristics 100 2.0 VCE, Collector−Emitter Voltage (V) VCE, Collector−Emitter Voltage (V) 16 VGE, Gate−Emitter Voltage (V) 25 A 12 50 A IC = 15 A 8 4 0 20 Common Emitter TC = 175°C 4 8 12 16 20 VGE, Gate−Emitter Voltage (V) Figure 6. Saturation Voltage vs VGE Figure 5. Saturation Voltage vs. VGE www.onsemi.com 4 FGH25T120SMD TYPICAL PERFORMANCE CHARACTERISTICS (continued) 15 VGE, Gate−Emitter Voltage (V) 10000 Capacitance (pF) Cies 1000 Coes 100 20 Common Emitter VGE = 0 V, f = 1 MHz TC = 25°C 1 Cres Common Emitter TC = 25°C 12 9 6 3 0 Switching Time (ns) 10 0.1 14 28 42 56 RG, Gate Resistance () tf 70 0 Common Emitter VCC = 600 V, VGE = 15 V IC = 25 A TC = 25°C TC = 175°C Switching Time (ns) Switching Loss (mJ) 300 Common Emitter VCC = 600 V, VGE = 15 V IC = 25 A TC = 25°C TC = 175°C Eon 1 Eoff 0.1 0 14 28 42 56 14 28 42 56 RG, Gate Resistance () 70 Figure 10. Turn−Off Characteristics vs. Gate Resistance Figure 9. Turn−On Characteristics vs. Gate Resistance 10 250 100 1 100 200 td(off) 1000 td(on) 0 150 10000 Common Emitter VCC = 600 V, VGE = 15 V IC = 25 A TC = 25°C TC = 175°C tr 10 100 Figure 8. Gate Charge Characteristics 300 Switching Time (ns) 50 Qg, Gate Charge (nC) Figure 7. Capacitance Characteristics 100 600 V VCC = 200 V 0 30 10 VCE, Collector−Emitter Voltage (V) 400 V 100 tr td(on) 10 70 Common Emitter VGE = 15 V, RG = 23  TC = 25°C TC = 175°C 0 10 20 30 40 50 IC, Collector Current (A) RG, Gate Resistance () Figure 12. Turn−On Characteristics vs. Collector Current Figure 11. Switching Loss vs. Gate Resistance www.onsemi.com 5 FGH25T120SMD TYPICAL PERFORMANCE CHARACTERISTICS (continued) 1000 100 Common Emitter VGE = 15 V, RG = 23  TC = 25°C TC = 175°C Switching Loss (mJ) Switching Time (ns) td(off) 100 tf 10 1 Common Emitter VGE = 15 V, RG = 23  TC = 25°C TC = 175°C 0 10 20 10 Eon 1 Eoff 30 40 0.1 50 0 10 IC, Collector Current (A) Figure 14. Switching Loss vs. Collector Current Figure 13. Turn−Off Characteristics vs. Collector Current 200 500 Duty Cycle: 50% TC = 100°C Power Dissipation =167 W 100 50 0 TC = 100°C 1k 10k 100k ICMAX(Pulse) 100 IC, Collector Current (A) IC, Collector Current (A) VCE = 600 V Load Current : Peak of Square Wave 150 100 s 10 DC Operation 10 ms Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature. 0.1 1 10 100 1000 VCE, Collector−Emitter Voltage (V) Figure 15. Load Current vs. Frequency Figure 16. SOA Characteristics 100 16 Irr, Reverse Recovery Current (A) IF, Forward Current (A) 1 ms ICMAX(Continuous) 1 0.01 1M 10 s f, Switching Frequency (Hz) TC = 175°C 10 TC = 25°C 1 50 20 30 40 IC, Collector Current (A) 0 1 2 3 4 12 5 di/dt = 200 A/s 10 8 di/dt = 100 A/s 6 di/dt = 200 A/s 4 2 VF, Forward Voltage (V) TC = 25°C TC = 175°C 14 di/dt = 100 A/s 0 10 20 30 40 IF, Forward Current (A) 50 Figure 18. Reverse Recovery Current Figure 17. Forward Characteristics www.onsemi.com 6 FGH25T120SMD TYPICAL PERFORMANCE CHARACTERISTICS (continued) 3000 500 Qrr, Stored Recovery Charge (nC) TC = 25°C TC = 175°C di/dt = 100 A/s 400 di/dt = 200 A/s 300 200 di/dt = 100 A/s 100 10 20 30 40 TC = 25°C TC = 175°C 2500 di/dt = 200 A/s 2000 1500 di/dt = 100 A/s 1000 500 di/dt = 200 A/s 0 0 50 di/dt = 100 A/s di/dt = 200 A/s 0 10 20 30 40 IF, Forward Current (A) IF, Forward Current (A) Figure 19. Reverse Recovery Time Figure 20. Stored Charge 0.5 Thermal Response (Zjc) 0 0.5 0.1 0.3 0.1 0.05 0.02 0.01 0.01 PDM Single Pulse 1E−3 1E−5 1E−4 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zjc + TC 1E−3 0.01 0.1 1 Rectangular Pulse Duration (sec) Figure 21. Transient Thermal Impedance of IGBT 2 Thermal Response (Zjc) trr, Reverse Recovery Time (ns) 600 1 0.5 0.3 0.1 0.1 0.05 PDM 0.02 0.01 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zjc + TC Single Pulse 0.01 0.005 10−5 10−4 10−2 10−3 10−1 Rectangular Pulse Duration (sec) Figure 22. Transient Thermal Impedance of Diode www.onsemi.com 7 100 50 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CH ISSUE A DATE 09 OCT 2019 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13853G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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