FGH40T70SHD-F155

IGBT - Field Stop, Trench 700 V, 40 A FGH40T70SHD Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for Solar Inverter, UPS, Welder, Telecom, ESS and PFC applications where low conduction and switching losses are essential. www.onsemi.com C Features • • • • • • • • • Maximum Junction Temperature : TJ =175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) =1.7 V(Typ.) @ IC = 40 A 100% of the Parts Tested for ILM(1) High Input Impedance Fast Switching Tighten Parameter Distribution These Devices are Pb−Free and are RoHS Compliant Applications G E E C G TO−247−3LD CASE 340CH • Solar Inverter, UPS, Welder, Telecom, ESS, PFC MARKING DIAGRAM $Y&Z&3&K FGH40T70SHD $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH40T70SHD = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2016 February, 2020 − Rev. 3 1 Publication Order Number: FGH40T70SHD/D FGH40T70SHD ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Rating Unit Collector to Emitter Voltage VCES 700 V Gate to Emitter Voltage VGES ±20 V ±30 V 80 A 40 A ILM (Note 1) 120 A ICM (Note 2) 120 A IF 40 A 20 A Description Transient Gate to Emitter Voltage Collector Current TC = 25°C Collector Current TC = 100°C Pulsed Collector Current TC = 25°C IC Pulsed Collector Current Diode Forward Current TC = 25°C Diode Forward Current TC = 100°C Pulsed Diode Maximum Forward Current Maximum Power Dissipation TC = 25°C Maximum Power Dissipation TC = 100°C IFM (Note 2) 120 A PD 268 W 134 W Operating Junction Temperature TJ −55 to +175 °C Storage Temperature Range Tstg −55 to +175 °C Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 400 V,VGE = 15 V, IC = 120 A, RG = 30  , Inductive Load 2. Repetive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol Typ Max Unit Thermal Resistance, Junction to Case Parameter RJC(IGBT) − 0.56 °C/W Thermal Resistance, Junction to Case RJC(Diode) − 1.71 °C/W RJA − 40 °C/W Thermal Resistance, Junction to Ambient PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGH40T70SHD−F155 FGH40T70SHD TO−247−3 (Pb−Free) Tube − − 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit 700 − − V IC = 1 mA, Reference to 25°C − 0.6 − V/°C OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BVCES Temperature Coefficient of Breakdown Voltage BVCES/TJ VGE = 0 V, IC = 250 A Collector Cut−Off Current ICES VCE = VCES, VGE = 0 V − − 250 A G−E Leakage Current IGES VGE = VGES, VCE = 0 V − − ±400 nA G−E Threshold Voltage VGE(th) IC = 40 mA, VCE = VGE 4.0 5.5 7.5 V Collector to Emitter Saturation Voltage VCE(sat) IC = 40 A, VGE = 15 V − 1.7 2.15 V IC = 40 A, VGE = 15 V, TC = 175°C − 2.37 − V ON CHARACTERISTICs www.onsemi.com 2 FGH40T70SHD ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued) Parameter Symbol Test Conditions Min Typ Max Unit − 2028 − pF DYNAMIC CHARACTERISTICS VCE = 30 V, VGE = 0 V, f = 1 MHz Input Capacitance Cies Output Capacitance Coes − 75 − pF Reverse Transfer Capacitance Cres − 26 − pF − 22 − ns − 40 − ns td(off) − 66 − ns SWITCHING CHARACTERISTICS Turn−On Delay Time VCC = 400 V, IC = 40 A, RG = 6  VGE = 15 V, Inductive Load, TC = 25°C td(on) Rise Time tr Turn−Off Delay Time Fall Time tf − 10 − ns Turn−On Switching Loss Eon − 1150 − J Turn−Off Switching Loss Eoff − 271 − J Total Switching Loss Ets − 1421 − J Turn−On Delay Time td(on) − 20 − ns − 36 − ns td(off) − 68 − ns tf − 13 − ns Turn−On Switching Loss Eon − 1760 − J Turn−Off Switching Loss Eoff − 455 − J Total Switching Loss Ets − 2215 − J Total Gate Charge Qg − 69 − nC Gate to Emitter Charge Qge − 13 − nC Gate to Collector Charge Qgc − 26 − nC Min Typ Max Unit V Rise Time VCC = 400 V, IC = 40 A, RG = 6  VGE = 15 V, Inductive Load, TC = 175°C tr Turn−Off Delay Time Fall Time VCE = 400 V, IC = 40 A, VGE = 15 V ELECTRICAL CHARACTERISTICS OF THE DIODE (TJ = 25°C unless otherwise noted) Parametr Diode Forward Voltage Reverse Recovery Energy Diode Reverse Recovery Time Diode Reverse Recovery Charge Symbol VFM Erec Test Conditions IF = 20 A IF = 20 A, dIF / dt = 200 A/s trr Qrr www.onsemi.com 3 TC = 25°C − 2.0 2.5 TC = 175°C − 1.73 − TC = 175°C − 54 − J TC = 25°C − 37 − ns TC = 175°C − 235 − TC = 25°C − 65 − TC = 175°C − 944 − nC FGH40T70SHD TYPICAL PERFORMANCE CHARACTERISTICS 120 o TC = 25 C 20V 120 10V Collector Current, IC [A] Collector Current, IC [A] 15V 12V 90 60 VGE = 8V 30 0 0 1 2 3 4 Collector−Emitter Voltage, VCE [V] VGE = 8V 60 30 Common Emitter VGE = 15V Collector−Emitter Voltage, VCE [V] Collector Current, IC [A] o TC = 25 C o TC = 175 C 60 30 1 2 3 4 Collector−Emitter Voltage, VCE [V] 3 80A 40A 2 IC = 20A 1 −100 5 −50 0 50 20 o Collector−Emitter Voltage, VCE [V] Collector−Emitter Voltage, VCE [V] TC = 25 C 16 12 40A 80A 4 0 4 8 12 16 Gate−Emitter Voltage, VGE [V] 200 Common Emitter o IC = 20A 150 Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Common Emitter 8 100 Collector−Emitter Case Temperature, TC [°C] Figure 3. Typical Saturation Voltage Characteristics 20 5 Figure 2. Typical Output Characteristics Common Emitter VGE = 15V 0 1 2 3 4 Collector−Emitter Voltage, VCE [V] 0 120 0 10V 12V 90 0 5 Figure 1. Typical Output Characteristics 90 20V o TC = 175 C 15V TC = 175 C 16 12 80A IC = 20A 4 0 20 40A 8 4 8 12 16 20 Gate−Emitter Voltage, VGE [V] Figure 6. Saturation Voltage vs VGE Figure 5. Saturation Voltage vs VGE www.onsemi.com 4 FGH40T70SHD TYPICAL PERFORMANCE CHARACTERISTICS 10000 15 Common Emitter o TC = 25 C Gate−Emitter Voltage, VGE [V] Capacitance [pF] Cies 1000 Coes 100 Common Emitter VGE = 0V, f = 1MHz Cres 12 VCC = 200V 400V 300V 9 6 3 o TC = 25 C 10 11 0 Collector−Emitter Voltage, VCE [V] 0 30 0 40 20 60 80 Gate Charge, Qg [nC] Figure 8. Gate Charge Characteristic Figure 7. Capacitance Characteristics 100 1000 tr Switching Time [ns] Switching Time [ns] t d(off) t d(on) Common Emitter VCC = 400V, V GE = 15V IC = 40A 10 100 tf Common Emitter VCC = 400V, VGE = 15V IC = 40A 10 o o TC = 25 C TC = 25 C o o TC = 175 C TC = 175 C 5 0 10 20 30 40 Gate Resistance, RG [] 1 50 0 10 40 20 30 Gate Resistance, RG [] 50 Figure 10. Turn−Off Characteristics vs. Gate Resistance Figure 9. Turn−On Characteristics vs. Gate Resistance 100 5000 Eon Switching Time [ns] Switching Loss [J] tr 1000 Eoff Common Emitter VCC = 400V, VGE = 15V IC = 40A o t d(on) Common Emitter VGE = 15V, RG = 6  10 o TC = 25 C TC = 25 C o o TC = 175 C 100 0 10 20 30 40 Gate Resistance, RG [] 5 20 50 TC = 175 C 40 60 Collector Current, IC [A] 80 Figure 12. Turn−On Characteristics vs. Collector Current Figure 11. Switching Loss vs. Gate Resistance www.onsemi.com 5 FGH40T70SHD TYPICAL PERFORMANCE CHARACTERISTICS 10000 500 Common Emitter VGE = 15V, RG = 6  TC = 25 C t d(off) Switching Loss [J] Switching Time [ns] o 100 tf 10 Common Emitter VGE = 15V, RG = 6 Eon o TC = 175 C 1000 Eoff o TC = 25 C o TC = 175 C 1 20 40 60 Collector Current, IC [A] 100 20 80 300 Square Wave o TJ